STMicroelectronics M74HC133B1R 13 input nand gate Datasheet

M54HC133
M74HC133
13 INPUT NAND GATE
.
.
.
.
.
.
.
.
HIGH SPEED
tPD = 13 ns (TYP.) at VCC = 5 V
LOW POWER DISSIPATION
ICC = 1 µA (MAX.) at TA = 25° C
HIGH NOISE IMMUNITY
VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
SYMMETRICAL OutpuT IMPEDANCE
|IOH| = IOL = 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
VCC (OPR) = 2 V to 6 V
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS133
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HC133F1R
M74HC133M1R
M74HC133B1R
M74HC133C1R
PIN CONNECTIONS (top view)
DESCRIPTION
The M54/74HC133 is a high speed CMOS 13INPUT NAND GATE fabricated in silicon gate
2
C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low
power consumption.
The internal circuit is composed of 7 stages including buffer output, which gives high noise immunity
and stable output. All inputs are equipped with protection circuits against static discharge and transient
excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
NC =
No Internal
Connection
October 1992
1/10
M54/M74HC133
TRUTH TABLE
PIN DESCRIPTION
A
B
C
D
E
F
G
H
I
J
K
L
M
Y
PIN No
SYMBOL
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
X
X
L
X
X
X
X
X
X
X
X
X
X
H
1 to 7,
10 to 15
9
A to G,
H to M
Y
Data Output
8
GND
Ground (0V)
16
VCC
Positive Supply Voltage
X
X
X
X
X
X
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
X
X
X
X
X
L
X
X
X
X
X
X
X
H
X
X
X
X
X
X
L
X
X
X
X
X
X
H
X
X
X
X
X
X
X
L
X
X
X
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
L
X
X
X
X
X
X
H
H
X
X
X
X
X
X
X
X
X
X
L
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
X: Don’t Care
LOGIC DIAGRAM (1/2 Package)
2/10
IEC LOGIC SYMBOL
NAME AND FUNCTION
Data Inputs
M54/M74HC133
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VI
Supply Voltage
DC Input Voltage
-0.5 to +7
-0.5 to VCC + 0.5
V
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
IOK
DC Input Diode Current
DC Output Diode Current
± 20
± 20
mA
mA
IO
DC Output Source Sink Current Per Output Pin
± 25
mA
DC VCC or Ground Current
± 50
mA
500 (*)
mW
ICC or IGND
PD
Power Dissipation
Tstg
TL
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
Value
2 to 6
Unit
V
V
VI
Input Voltage
0 to VCC
VO
Output Voltage
0 to VCC
Top
Operating Temperature: M54HC Series
M74HC Series
tr, tf
Input Rise and Fall Time
-55 to +125
-40 to +85
VCC = 2 V
0 to 1000
VCC = 4.5 V
VCC = 6 V
0 to 500
0 to 400
V
o
o
C
C
ns
3/10
M54/M74HC133
DC SPECIFICATIONS
Test Conditions
Symbol
VIH
V IL
V OH
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level
Output Voltage
II
ICC
4/10
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
TA = 25 C
54HC and 74HC
Min. Typ. Max.
VCC
(V)
-40 to 85 oC -55 to 125 oC
74HC
54HC
Min. Max. Min. Max.
2.0
1.5
1.5
1.5
4.5
6.0
3.15
4.2
3.15
4.2
3.15
4.2
2.0
0.5
0.5
0.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
2.0
4.5
6.0
6.0
2.0
Unit
V
4.5
4.5
VOL
Value
o
VI =
IO=-20 µA
VIH
or
V IL IO=-4.0 mA
1.9
2.0
1.9
1.9
4.4
5.9
4.5
6.0
4.4
5.9
4.4
5.9
4.18
4.31
4.13
4.10
IO=-5.2 mA
5.68
5.8
0.0
5.63
0.1
0.1
0.1
V
V
5.60
0.0
0.1
0.1
0.1
6.0
4.5
VI =
IO= 20 µA
VIH
or
V IL IO= 4.0 mA
0.0
0.17
0.1
0.26
0.1
0.33
0.1
0.40
6.0
IO= 5.2 mA
0.18
0.26
0.33
0.40
VI = VCC or GND
±0.1
±1
±1
µA
VI = VCC or GND
1
10
20
µA
4.5
6.0
6.0
V
M54/M74HC133
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions
Value
Symbol
Parameter
VCC
(V)
TA = 25 oC
54HC and 74HC
Min. Typ. Max.
-40 to 85 oC -55 to 125 oC
74HC
54HC
Min. Max. Min. Max.
tTLH
tTHL
Output Transition
Time
2.0
30
75
95
110
4.5
6.0
8
7
15
13
19
16
22
19
tPLH
tPHL
Propagation
Delay Time
2.0
42
130
165
195
4.5
16
26
33
39
6.0
14
22
28
33
CIN
Input Capacitance
5
10
10
10
CPD (*)
Power Dissipation
Capacitance
29
Unit
ns
ns
pF
pF
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
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M54/M74HC133
Plastic DIP16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
6/10
M54/M74HC133
Ceramic DIP16/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7
0.276
D
E
3.3
0.130
0.38
e3
0.015
17.78
0.700
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
0.51
1.27
0.020
0.050
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053D
7/10
M54/M74HC133
SO16 (Narrow) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.004
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
E
5.8
10
0.385
6.2
0.228
0.393
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
P013H
8/10
M54/M74HC133
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
9/10
M54/M74HC133
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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