PD - 94176C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF597110 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω ID -2.6A 1.0Ω -2.6A TO-39 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -2.6 -1.6 -10.4 15 0.12 ±20 30 -2.6 1.5 6.6 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical) g For footnotes refer to the last page www.irf.com 1 12/03/03 IRHF597110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA — -0.13 — V/°C Reference to 25°C, ID = -1.0mA — — -2.0 1.3 — — — — — — — — 1.2 1.0 -4.0 — -10 -25 Ω — — — — — — — — — — — — — — — — — — — 7.0 -100 100 11 3.0 4.0 20 20 30 95 — nC VGS = -12V, ID = -2.6A ➃ VGS = -12V, ID = -1.6A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.6A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -2.6A VDS = -50V ns VDD = -50V, ID = -2.6A VGS =-12V, RG = 7.5Ω ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units V S( ) Ω BVDSS µA nA Test Conditions nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 370 100 7.0 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -2.6 -10.4 -5.0 100 250 Test Conditions A V ns nC Tj = 25°C, IS = -2.6A, VGS = 0V ➃ Tj = 25°C, IF = -2.6A, di/dt ≤−100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 8.3 175 Units °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃ 300K Rads (Si)2 Units Min Max -100 -2.0 — — — — — -4.0 -100 100 -10 0.916 — -5.0 Test Conditions -100 — -2.0 -5.0 — -100 — 100 — -10 — 0.916 nA µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID =-1.6A — V VGS = 0V, IS = -2.6A V -5.0 1. Part number IRHF597110 2. Part number IRHF593110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET MeV/(mg/cm2) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (µm) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 — VDS (V) @ VGS=10V @VGS=15V -100 -70 -70 - 50 — — @VGS=20V -60 -40 — -120 -100 VDS -80 Cu Br I -60 -40 -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF597110 Pre-Irradiation 10 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 1 20µs PULSE WIDTH T = 25 C 1 1 10 100 2.5 10 TJ = 150 ° C 15 V DS = -50V 20µs PULSE WIDTH 8 9 10 11 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C 7 1 10 100 Fig 2. Typical Output Characteristics 100 6 ° J -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 20µs PULSE WIDTH T = 150 C 0.1 0.1 -VDS , Drain-to-Source Voltage (V) 1 -5.0V ° J 0.1 0.1 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -2.6A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 500 Ciss 400 300 C oss 200 100 Crss 20 -VGS , Gate-to-Source Voltage (V) 600 C, Capacitance (pF) IRHF597110 0 1 10 ID = -2.6A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 2 -VDS , Drain-to-Source Voltage (V) 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 -I D, Drain-to-Source Current (A) 100 -ISD , Reverse Drain Current (A) VDS = -80V VDS = -50V VDS = -20V 10 TJ = 150 ° C 1 TJ = 25 ° C V GS = 0 V 0.1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 1 0.1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10ms 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF597110 Pre-Irradiation 3.0 RD VDS VGS 2.5 D.U.T. -ID , Drain Current (A) RG - V DD + 2.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.5 Fig 10a. Switching Time Test Circuit 1.0 0.5 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF597110 L VDS tp VD D A IA S D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG -2 V V0GS 60 ID -1.2A -1.6A BOTTOM -2.6A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF597110 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =-25V, starting TJ = 25°C, L= 8.9 mH Peak IL = -2.6A, VGS = -12V ➂ ISD ≤ -2.6A, di/dt ≤ -120A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/03 8 www.irf.com