INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805，IIRF2805 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 700 A PD Total Dissipation @TC=25℃ 330 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.45 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805，IIRF2805 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 55 VGS(th) Gate Threshold Voltage VDS=10; ID =250μA 2.0 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4.0 V VGS=10V; ID=104A 4.7 mΩ Gate-Source Leakage Current VGS=±20V ±0.2 μA IDSS Drain-Source Leakage Current VDS=55V; VGS= 0V 20 μA VSD Diode forward voltage IS=104A, VGS = 0 V 1.3 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark