BTA26 Discrete Triacs(Isolated) T2 Dimensions TO-218 DIMENSIONS REF. G H G R T2 BTA26-400 A B T1 T1 Type Min. A ØL Millimeters Typ. 4.4 Inches Max. Min. 4.6 0.173 Typ. Max. 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 K VRSM VRRM VDSM VDRM G F 0.028 V V G 20.4 21.1 0.815 0.831 500 400 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 BTA26-600 700 600 BTA26-800 900 800 BTA26-1000 1100 1000 BTA26-1200 1300 1200 P C J D J E ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 0.181 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter PG(AV) Tstg Tj Unit RMS on-state current (full sine wave) TO-218 Tc = 100°C 25 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 250 260 A 340 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms VDSM/V RSM Non repetitive surge peak off-state voltage IGM Value Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation + 100 Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESSand LOGIC LEVEL(3 Quadrants) ■ Symbol IGT VGT Test ConGLtions VD = 12 V VGD VD = VDRM IH IT = 500 mA IL Quadrant RL = 33 Ω RL = 3.3 kΩ Tj = 125°C BTA (dI/dt)c P1 BW 35 50 mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V IG = 1.2 IGT I - III MAX. 50 75 mA MAX. 70 80 mA 80 100 II dV/dt Unit CW VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs Without snubber MIN. 13 22 A/ms Tj = 125°C ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA26 Discrete Triacs(Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT VD = 12 V VGT VGD VD = VDRM IH IT = 500 mA Quadrant RL = 33 Ω RL = 3.3 Ω Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 80 mA MAX. 70 Tj = 125°C IG = 1.2 IGT IL Value I - III - IV II dV/dt (dV/dt)c mA 160 VD = 67 % VDRM gate open Tj = 125°C MIN. 500 V/µs (dI/dt)c =13.3 A/ms MIN. 10 V/µs Tj = 125°C STATIC CHARACTERISTICS Symbol Test Conditions VTM ITM = 25 A Vto tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 16 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 3 mA IRRM Tj = 125°C MAX. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 0.8 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type 50 mA Standard Weight Base quantity Packing mode 4.6g 250 Bulk Package 200 V ~~ 100 V BTA26 X X TO-218 OTHER INFORMATION Part Number BTA26 P2 Marking BTA26 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA26 Discrete Triacs(Isolated) F ig. :1 Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). 30 P (W) F ig. - 2 : R MS on-s tate current vers us cas e temperature (full cycle). 30 25 25 20 20 15 15 10 10 B TA 26 5 5 0 IT (R MS ) (A ) IT (R MS ) (A ) 0 5 10 0 15 20 25 F ig. 3: R ela tive variation of thermal impedance vers us puls e duration. 1E +0 T c (°C ) 0 F ig. 4 : values ). 300 K =[Zth/R th] 25 50 75 100 125 O n-s tate characteris tics (ma ximum IT M (A ) 100 T j max Zth(j-c) 1E -1 Zth(j-a) B TA/B T B 24/T 25 1E -2 10 Zth(j-a) B TA26 1E -2 1E -1 1E +0 1 0.5 1E +1 2.0 2.5 3.0 3.5 4.0 4.5 F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of I²t. IT S M (A ), I² t (A²s ) 3000 t=20ms 200 T j initial=25°C One cycle Non repetitive T j initial=25°C 1000 150 dI/dt limitation: 50A /µs R epetitive T c=75°C 100 50 P3 1.5 IT S M (A ) 250 0 1.0 1E +2 5E +2 F ig. 5: S urge peak on-s tate current versus number of cycles. 300 T j max. V to = 0.85 V R d = 16 Ωm V T M (V ) tp (s ) 1E -3 1E -3 T j=25°C IT S M Number of ycles c 1 10 100 1000 I²t tp (ms ) 100 0.01 0.10 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] 1.00 10.00 www.sirectifier.com BTA26 Discrete Triacs(Isolated) F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). 2.5 IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ] 2.0 IG T 1.5 1.0 IH & IL 0.5 T j(°C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. 8 : R elative varia tion of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 B W/C W/T 2535 1.4 B 1.2 1.0 0.8 0.6 (dV /dt)c (V /µs ) 0.4 0.1 1.0 10.0 100.0 F ig. 9 : R elative variation of critical rate of decreas e of main current vers us junction temperature. 6 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 5 4 3 2 1 0 T j (°C ) 0 P4 25 50 75 100 125 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com