ON MMT05A260T3G Thyristor surge protectors high voltage bidirectional tspd Datasheet

MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 μsec; for
Controlled Temperature Environments in the SMA package
• The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Registered − File #E210057
• Pb−Free Packages are Available
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
MT1
MT2
SMA
(No Polarity)
CASE 403D
MARKING DIAGRAM
xxx
AYWWG
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Off−State Voltage − Maximum
MMT05A230T3
MMT05A260T3
MMT05A310T3
VDM
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
8 x 20 msec
10 x 160 msec
10 x 560 msec
10 x 1000 msec
Maximum Non−Repetitive Rate of
Change of On−State Current Double
Exponential Waveform,
IPK = 50 A, PW = 15 ms
Value
Unit
Volts
"170
"200
"270
xxx
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
A(pk)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
IPPS1
IPPS2
IPPS3
IPPS4
"150
"100
"70
"50
di/dt
"100
Preferred devices are recommended choices for future use
and best overall value.
A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
MMT05A230T3/D
MMT05A230T3, MMT05A260T3, MMT05A310T3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
Characteristic
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 50A, 10x1000 μsec @ 25°C)
PPK
2000
W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/μs, ISC = 1.0 A, Vdc = 1000 V)
Symbol
Min
Typ
Max
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
265
320
365
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
280
340
400
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
265
320
365
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
280
340
400
−
0.08
−
−
−
−
190
240
280
−
−
−
V(BO)
Unit
Volts
(+65°C)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3)
V(BO)
Volts
(+65°C)
Breakover Voltage Temperature Coefficient
dV(BO)/dTJ
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
V(BR)
MMT05A230T3
MMT05A260T3
MMT05A310T3
%/°C
Volts
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
−
−
−
−
2.0
5.0
μA
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 μs, Duty Cycle ≤ 2%) (Note 3)
VT
−
1.53
3.0
Volts
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
−
230
−
mA
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = "1.0 Amp
IH
150
340
−
mA
dv/dt
2000
−
−
V/μs
CO
−
−
22
35
−
50
pF
(Note 3)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
3. Measured under pulse conditions to reduce heating.
http://onsemi.com
2
MMT05A230T3, MMT05A260T3, MMT05A310T3
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
VTM
IH
ID1
VD2
V(BR)
340
V BR , BREAKDOWN VOLTAGE (VOLTS)
I D1, OFF−STATE CURRENT (μ A)
I(BO)
ID2
+ Voltage
VD1
100
VD1 = 50V
10
1
0.1
0.01
V(BO)
0
20
40
60
80
100
TEMPERATURE (°C)
120
320
300
MMT05A260T3
260
240
MMT05A230T3
220
200
180
160
−2
0
140
MMT05A310T3
280
Figure 1. Off−State Current versus Temperature
−10
0
10
20
30
40
TEMPERATURE (°C)
50
60
Figure 2. Typical Breakdown Voltage versus
Temperature
http://onsemi.com
3
70
MMT05A230T3, MMT05A260T3, MMT05A310T3
800
MMT05A310T3
320
300
I H , HOLDING CURRENT (mA)
V BO , BREAKOVER VOLTAGE (VOLTS)
340
MMT05A260T3
280
260
MMT05A230T3
240
220
200
600
500
400
300
200
180
160
700
− 10
−2
0
10
20
40
30
TEMPERATURE (°C)
0
50
60
100
70
−2
0
Figure 3. Typical Breakover Voltage versus
Temperature
−10
0
10
20
30
40
TEMPERATURE (°C)
50
60
70
Figure 4. Typical Holding Current versus
Temperature
Peak
Value
100
CURRENT (A)
Ipp − PEAK PULSE CURRENT − %Ipp
100
tr = rise time to peak value
tf = decay time to half value
Half Value
50
1
0.001
0
0 tr
10
tf
TIME (ms)
Figure 5. Exponential Decay Pulse Waveform
0.01
0.1
1
TIME (sec)
10
100
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
http://onsemi.com
4
MMT05A230T3, MMT05A260T3, MMT05A310T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
RING
HEAT COIL
http://onsemi.com
5
TELECOM
EQUIPMENT
MMT05A230T3, MMT05A260T3, MMT05A310T3
ORDERING INFORMATION
Device
MMT05A230T3
MMT05A230T3G
MMT05A260T3
MMT05A260T3G
MMT05A310T3
MMT05A310T3G
Package
Device Marking
Shipping †
SMA
PBF
5000 / Tape & Reel (12 mm Reel)
SMA
(Pb−Free)
PBF
5000 / Tape & Reel (12 mm Reel)
SMA
PBG
5000 / Tape & Reel (12 mm Reel)
SMA
(Pb−Free)
PBG
5000 / Tape & Reel (12 mm Reel)
SMA
PBJ
5000 / Tape & Reel (12 mm Reel)
SMA
(Pb−Free)
PBJ
5000 / Tape & Reel (12 mm Reel)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
MMT05A230T3, MMT05A260T3, MMT05A310T3
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE C
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.91
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.16
2.41
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.075
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.085
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.095
0.006
0.064
0.016
0.115
0.180
0.220
0.060
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MMT05A230T3/D
Similar pages