PHILIPS BLW98 Uhf linear power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98
UHF linear power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
DESCRIPTION
FEATURES:
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers of TV
transposers and transmitters in band
IV-V, as well as for driver stages in
tube systems.
• diffused emitter ballasting resistors
for an optimum temperature profile;
• gold sandwich metallization
ensures excellent reliability.
The transistor has a 1⁄4" capstan
envelope with ceramic cap. All leads
are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
fvision
MHz
VCE
V
IC
mA
Th
°C
dim(1)
dB
class-A
860
25
850
70
−60
>
3,5
>
6,5
class-A
860
25
850
25
−60
typ.
4,4
typ.
7,0
MODE OF OPERATION
Po sync (1)
W
Gp
dB
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING - SOT122A.
PIN
4
handbook, halfpage
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
VCESM
max.
open base
VCEO
max.
27 V
VEBO
max.
3,5 V
d.c.
IC
max.
2 A
(peak value); f > 1 MHz
ICM
max.
4 A
Total power dissipation at Th = 70 °C
Ptot
max.
21,5 W
Storage temperature
Tstg
Operating junction temperature
Tj
Emitter-base voltage (open collector)
50 V
Collector current
MGP717
10
−65 to +150 °C
200 °C
max.
MGP718
40
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
30
(1)
Th = 70 °C
1
Tmb = 25 °C
20
10−1
1
10
VCE (V)
10
102
0
50
Th (°C)
100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE
(dissipation = 21,25 W; Tmb = 82,75 °C, Th = 70 °C)
From junction to mounting base
Rth j-mb
=
5,45 K/W
From mounting base to heatsink
Rth mb-h
=
0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
MGP719
6.5
handbook, full pagewidth
Rth j-h
Th = 120 °C
(K/W)
100 °C
80 °C
60 °C
40 °C
20 °C
6
Tj = 200 °C
0 °C
175 °C
5.5
150 °C
125 °C
5
100 °C
4.5
75 °C
4
5
Fig.4
15
25
35
Ptot (W)
45
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example
Nominal class-A operation (without r.f. signal): VCE = 25 V; IC = 850 mA; Th = 70 °C.
Fig.4 shows:
Rth j-h
max. 6,05 K/W
Tj
max.
200 °C
typ.
5,35 K/W
typ.
183 °C
Typical device: Rth j-h
Tj
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 10 mA
V(BR)CES
>
50 V
open base, IC = 25 mA
V(BR)CEO
>
27 V
V(BR)EBO
>
3,5 V
hFE
>
typ.
15
40
VCEsat
typ.
0,25 V
fT
typ.
2,5 GHz
Cc
typ.
<
24 pF
30 pF
IC = 50 mA; VCE = 25 V
Cre
typ.
15 pF
Collector-stud capacitance
Ccs
typ.
1,2 pF
Emitter-base breakdown voltage
open collector, IE = 5 mA
D.C. current
gain(1)
IC = 850 mA; VCE = 25 V
Collector-emitter saturation voltage(1)
IC = 500 mA; IB = 100 mA
Transition frequency at f = 500 MHz(2)
−IE = 850 mA; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
MGP720
10
handbook, halfpage
IC
(A)
Th = 70 °C
25 °C
1
10−1
10−2
0.5
1
1.5
VBE (V)
2
Fig.5 Typical values; VCE = 25 V.
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
MGP721
60
MGP722
100
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
75
VCE = 25 V
40
5V
50
20
typ
25
0
0
0
1
0
2
IC (A)
10
20
VCB (V)
30
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.6 Typical values; Tj = 25 °C.
MGP723
4
handbook, full pagewidth
fT
(GHz)
3
typ
2
1
0
0
1
2
Fig.8 VCB = 25 V; f = 500 MHz; Tj = 25 °C.
August 1986
6
−IE (A)
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
APPLICATION INFORMATION
R.F. performance in u.h.f. class-A operation (linear power amplifier)
fvision (MHz)
VCE (V)
IC (mA)
dim(dB)(1)
Th (°C)
Po sync (W)(1)
GP (dB)
860
25
850
70
−60
>
3,5
>
6,5
860
25
850
70
−60
typ.
3,8
typ.
7,0
860
25
850
25
−60
typ.
4,4
typ.
7,0
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
VSWR input < 1.1
C1
T.U.T.
L1
50 Ω
C12
C2
L4
L2
VSWR output <
50 Ω
L3
C5
C3
C8
C9
C6
R3
C10
C11
R4
R2
BD136
C4
C7
BY206
R1
R5
R6
R7
+VS
MGP724
Fig.9 Class-A test circuit at fvision = 860 MHz.
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
List of components:
C1
= C2 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3
= C4 = 100 nF polyester capacitor
C5
= C6 = 1 nF feed-through capacitor
C7
= 5,6 pF ceramic capacitor
C8
= 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003)
C9
= 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C10 = 10 µF/40 V solid aluminium electrolytic capacitor
C11 = 470 nF polyester capacitor
C12 = 2 × 3,3 pF chip capacitors (in parallel)
R1
= 150 Ω carbon resistor (0,25 W)
R5 = 4 × 12 Ω carbon resistors in parallel (1 W each)
R2
= 1,8 kΩ carbon resistor (0,5 W)
R6 = 1 kΩ carbon resistor (0,25 W)
R3
= 33 Ω carbon resistor (0,5 W)
R7 = 220 Ω carbon potentiometer (0,25 W)
R4
= 220 Ω carbon resistor (1 W)
L1
=
stripline (13,6 mm × 6,9 mm)
L2
= microchoke 0,47 µH (cat. no. 4322 057 04770)
L3
= 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 2 × 5 mm
L4
=
stripline (40,8 mm × 6,9 mm)
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74);
thickness 1,5 mm.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
96 mm
handbook, full pagewidth
rivet
47 mm
C5
+VCC
VBB
C11
C6
C3
L3
L2
C8
L4
L1
C1
C12
C9
C2
band V
MGP725
Note
Hole in printed-circuit board: Ø 9,7 mm.
Fig.10 Component layout and printed circuit board for 860 MHz class-A test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve
as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters
and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
MGP726
−50
handbook, full pagewidth
dim
(dB)
15
dcm
(%)
−55
10
dim
dcm
−60
−65
5
0
2
4
6
8
Po sync (W)
0
10
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of Po sync.
Typical values; VCE = 25 V; IC = 850 mA;− − −Th = 25 °C;Th = 70 °C; fvision = 860 MHz.
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤ −75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB.
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
MGP727
5
ri, xi
MGP728
10
handbook, halfpage
handbook, halfpage
RL, XL
(Ω)
4
(Ω)
xi
8
RL
3
XL
2
6
ri
1
0
400
650
f (MHz)
4
400
900
Typical values; VCE = 25 V; IC = 850 mA;
class-A operation; Th = 70 °C.
MGP729
12
Gp
(dB)
8
4
f (MHz)
900
Typical values; VCE = 25 V; IC = 850 mA;
class-A operation; Th = 70 °C.
Fig.14
August 1986
900
Fig.13 Load impedance (series components).
handbook, halfpage
650
f (MHz)
Typical values; VCE = 25 V; IC = 850 mA;
class-A operation; Th = 70 °C.
Fig.12 Input impedance (series components).
0
400
650
11
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
A
ceramic
BeO
metal
Q
c
N1
A
D1
w1 M A
D2
N
M
W
N3
M1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M1
M
N
N1
max.
N3
Q
W
w1
α
mm
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24
6.93
27.56
25.78
9.91
9.14
3.18
2.66
1.66
1.39
11.82
11.04
1.02
3.86
2.92
3.38
2.74
8-32
UNC
0.381
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122A
August 1986
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
13