<^>£.mL-(-onauctoi iJ-^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLX97 U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.n.f. amplifiers for television transposes and transmitters. Features: • guaranteed low intermodulation figures; * gold metallization ensures excellent reliability. The transistor has a !i" capstan envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance in linear amplifier tion mode of operation class A class-A ^vision MHz VCE V 'C mA Th °C dim* dB p sync * "o W Gp dB 860 860 25 25 500 500 25 25 -60 -60 > 1.0 typ. 1.1 > 5,5 typ. 6,5 * Three-tone test method (vision carrier —8 dB, sound carrier —7 dB, sideband signal —16 dB), zero dB corresponds to peak sync level. MECHANICAL DATA Dimensions in mm Fig. 1 SOT-48/3. — — 0,14 Torque on nut: min. 0,75 Nm (7,5 kg cm) max. 0,85 Nm (8,5 kg cm) Diameter of clearance hole in heatsink: max. 4,2 mm. Mounting hole to have no burrs at either end. De-burring must leave surface flat; do not chamfer or countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BaO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BLX97 RATINGS Limiting values In accordance with the Absolute Maximum System (IEC134) Collector-base voltage (opea emitter; peak value) VCBOM max. 40 V Collector-emitter voltage (Rgg = 10Q;peak value) V CERM max. 40 V max. 27 V Collector-emitter voltage (open base) V CEO Emitter-base voltage (open collector) VEBO max. 3,5 V Collector current ( d . c . ) Ic max. 0,8 A max. 2 A max. 12,5 W Collector current (peak value) f > 1 MHz T CM Total power dissipation up to Tn = 100 °C p D.C. SOAR , < luu 100 °c T 1a p •h mb-h 0,6 K/W —^ " • (mA) 103 1 1at max t<\ \ ^V 102 10 10 VCE (V) io2 Storage temperature T Junction temperature TJ -65 to +200 °C max, 200 °C j-mb 7,5 K/W ^h mb-h 0,6 . K/W stg THERMAL RESISTANCE From junction to mounting base From mounting base to heats ink R th BLX97 CHARACTERISTICS TJ = 25 °C unless otherwise specified Collector cut-off current IE = 0; VCB = 20 V 200 pA V (BR)CBO 40 V V (BR)CER 40 27 V V 3,5 V 0,75 V 'CBO Breakdown voltages Collector-base voltage open emitter; IQ = 2 mA Collector-emitter voltage R B E = 10 Q; Ic = 10 mA open base; I^. = 10 mA Emitter-base voltage open collector; !E = 2 mA V(BR)CEO V (BR)EBO Saturation voltage Ic = 400 mA; IQ = 40 mA V CE S at * D,C. current gain Ic = 400 mA; V CE = 20 V 30 FE Ic = 800 mA; V CE = 20 V 20 Transition frequency Ic = 400 mA; V CE = 20 V 1,2 GHz Ic = 700 mA; V CE = 20 V 1,0 GHz Collector capacitance at f = 1 MHz 20 pF typ. 7 pF typ. 2 pF I E = le = 0; VCB = M v Feedback capacitance at f = 1 MHz I c - 2 0 m A ! V C E = 2 0 V ; T m h = 25 Collector-stud capacitance