DMP2075UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features BVDSS RDS(ON) Max -20V 75mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V ID Max TA = +25°C -3.8A -3.0A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch Power Management Functions Portable Power Adaptors Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) S2 G2 D2 D1 D1 D2 G1 S1 Q2 P-CHANNEL MOSFET Q1 P-CHANNEL MOSFET Internal Schematic Pin1 Bottom View Ordering Information (Note 4) Part Number DMP2075UFDB -7 DMP2075UFDB -13 Notes: Case U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information U-DFN2020-6 (Type B) N4 O3 Date Code Key Year Code 2017 E Month Code Jan 1 2018 F Feb 2 DMP2075UFDB Document number: DS40150 Rev. 2 - 2 2019 G Mar 3 O3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) YM ADVANCED INFORMATION Product Summary 2020 H Apr 4 May 5 2021 I Jun 6 1 of 7 www.diodes.com 2022 J Jul 7 Aug 8 2023 K Sep 9 2024 L Oct O 2025 M Nov N Dec D October 2017 © Diodes Incorporated DMP2075UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V ID -3.8 -3.0 A Steady State ADVANCED INFORMATION Continuous Drain Current (Note 5) VGS = 4.5V TA = +25°C TA = +70°C IS -1.0 A IDM -25 A Avalanche Current (Note 7) L = 0.1mH IAS -13 A Avalanche Energy (Note 7) L = 0.1mH EAS 8.5 mJ Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C Steady State TA = +25°C Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.7 178 1.4 92 22 -55 to +150 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(TH) -0.35 — -1.4 V VDS = VGS, ID = -250μA — 53 75 — 64 137 VSD — -0.7 -1.2 V Input Capacitance CISS — 642 — pF Output Capacitance COSS — 98 — pF Reverse Transfer Capacitance CRSS — 87 — pF Rg — 26.5 — Ω — 8.8 — nC Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) mΩ VGS = -4.5V, ID = -2.9A VGS = -2.5V, ID = -2.3A VGS = 0V, IS = -3.0A DYNAMIC CHARACTERISTICS (Note 9) Gate Resistance Total Gate Charge (VGS = -4.5V) Qg VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz — 0.9 — nC Gate-Source Charge Qgs — 2.9 — nC Gate-Drain Charge Qgd — 5.5 — nC Turn-On Delay Time tD(ON) — 22.6 — ns Turn-On Rise Time tR — 34.1 — ns Turn-Off Delay Time tD(OFF) — 34.3 — ns tF — 13 — ns Body Diode Reverse Recovery Time tRR — 3.3 — ns IS = -3.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 642 — nC IS = -3.0A, dI/dt = 100A/μs Total Gate Charge (VGS = -8V) Turn-Off Fall Time Notes: VDS = -10V, ID = -3.7A VDD = -10V, VGS = -4.5V, RL = 3.3Ω, Rg = 1Ω 5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP2075UFDB Document number: DS40150 Rev. 2 - 2 2 of 7 www.diodes.com October 2017 © Diodes Incorporated DMP2075UFDB 10 20 VGS = -8V VDS = -5.0V VGS = -4.5V 8 I D, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 VGS = -2.0V 10 VGS = -1.5V 5 6 T J = 150°C 4 TJ = 125°C T J = 25°C T J = 85°C TJ = -55°C 2 VGS = -1.2V VGS = -1.0V 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 150 120 90 VGS = -2.5V VGS = -4.5V 60 30 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 3 0.5 1 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 500 450 400 I D = -2.9A 350 300 ID = -2.3A 250 200 150 100 20 80 50 0 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 8 2 VGS = -4.5V 1.8 70 60 50 T J = 150°C T J = 125°C TJ = 85°C TJ = 25°C RD S(ON ), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ADVANCED INFORMATION VGS = -2.5V VGS = -3.0V T J = -55°C 40 30 20 0 5 10 15 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP2075UFDB Document number: DS40150 Rev. 2 - 2 20 1.6 1.4 1.2 VGS = -4.5V I D = -2.9A 1 VGS = -2.5V I D = -2.3A 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature 3 of 7 www.diodes.com October 2017 © Diodes Incorporated 0.8 )V ( E G A T L O V D L O H S E R H T E T A G , )h 80 VGS = -2.5V I D = -2.5A 70 60 VGS = -4.5V 50 ID = -2.9A 40 30 20 t( S G 10 V 0 -50 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 0.6 I D = -1mA 0.4 I D= -250µA 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 10000 CT , JUNCTION CAPACITANCE (pF) I S, SOURCE CURRENT (A) f=1MHz 15 T J = 150°C 10 T J = 125°C TJ = 85°C T J = 25°C T J = -55°C 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1000 Ciss C oss 100 C rss 10 0 2 8 5 10 15 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 100 R DS(ON) Limited VDS = -10V 6 )A 10 ( T N E R R DC U 1 C PW = 10s N I A PW = 1s R D ,D T = 150°C PW = 100ms 0.1 J(MAX) I I D = -4A 4 2 TC = 25°C 0 0 VGS =- 4.5V Single Pulse DUT on 1 * MRP Board 2 4 6 8 10 12 14 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP2075UFDB Document number: DS40150 Rev. 2 - 2 P W = 10µs ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMP2075UFDB 16 4 of 7 www.diodes.com 0.01 0.1 P W = 10ms PW = 1ms 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 October 2017 © Diodes Incorporated DMP2075UFDB r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 178°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 DMP2075UFDB Document number: DS40150 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 October 2017 © Diodes Incorporated DMP2075UFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCED INFORMATION U-DFN2020-6 (Type B) A A3 A1 Seating Plane D D2 D2 R0.1 (Pin E 50 #1 ID ) z1 E2 z1 k L z U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 Y C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 X DMP2075UFDB Document number: DS40150 Rev. 2 - 2 6 of 7 www.diodes.com October 2017 © Diodes Incorporated DMP2075UFDB IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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