ON NSBC114EDXV6T5 Dual bias resistor transistor Datasheet

NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
NSBC114EDXV6T1
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
MARKING
DIAGRAM
MAXIMUM RATINGS
1
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
350 (Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
PD
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
RqJA
250 (Note 1)
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current
SOT−563
CASE 463A
PLASTIC
xx M G
1
xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation; TA = 25°C
Derate above 25°C
Total Device Dissipation; TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Range
ORDERING INFORMATION
Device
NSBC1xxxDXV6T1
Shipping †
SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T5
1. FR−4 @ Minimum Pad
Package
SOT−563* 8000/Tape & Reel
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
1
Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device†
Package*
Marking
R1 (kW)
R2 (kW)
NSBC114EDXV6T1
SOT−563
7A
10
10
NSBC124EDXV6T1
SOT−563
7B
22
22
NSBC144EDXV6T1
SOT−563
7C
47
47
NSBC114YDXV6T1
SOT−563
7D
10
47
NSBC114TDXV6T1 (Note 2)
SOT−563
7E
10
∞
NSBC143TDXV6T1 (Notes 2)
SOT−563
7F
4.7
∞
NSBC113EDXV6T1 (Note 2)
SOT−563
7G
1.0
1.0
NSBC123EDXV6T1 (Notes 2)
SOT−563
7H
2.2
2.2
NSBC143EDXV6T1 (Notes 2)
SOT−563
7J
4.7
4.7
NSBC143ZDXV6T1 (Notes 2)
SOT−563
7K
4.7
47
NSBC124XDXV6T1 (Notes 2)
SOT−563
7L
22
47
NSBC123JDXV6T1 (Note 2)
SOT−563
7M
2.2
47
NSBC115EDXV6T1 (Notes 2)
SOT−563
7N
100
100
NSBC144WDXV6T1 (Notes 2)
SOT−563
7P
47
22
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
NSBC113EDXV6T1/NSBC123EDXV6T1
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V,
(VCC = 5.0 V,
(VCC = 5.0 V,
VB = 3.5 V, RL = 1.0 kW)
VB = 5.5 V, RL = 1.0 kW)
VB = 4.0 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
VOL
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144EDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
Vdc
Vdc
NSBC113EDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
R1/R2
NSBC114EDXV6T1, NSBC114EDXV6T5
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
NSBC114EDXV6T1, NSBC114EDXV6T5
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1
TA=−25°C
25°C
0.1
75°C
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
0.01
0.001
VCE = 10 V
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
0.001
50
TA=−25°C
10
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
4
3
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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5
50
10
NSBC114EDXV6T1, NSBC114EDXV6T5
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
50
VCE = 10 V
1
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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6
NSBC114EDXV6T1, NSBC114EDXV6T5
10
1000
IC/IB = 10
1
25°C
TA=−25°C
0.01
0
25°C
−25°C
10
50
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
100
75°C
0.1
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
TA=−25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
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7
NSBC114EDXV6T1, NSBC114EDXV6T5
1
300
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
1
2
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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8
10
NSBC114EDXV6T1, NSBC114EDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
1
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
5
4
2
3
E
−Y−
HE
b 65 PL
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
C
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NSBC114EDXV6/D
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