Advance Technical Information HiPerRFTM Power MOSFETs IXFN 55N50F VDSS ID25 F-Class: MegaHertz Switching RDS(on) D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 250 ns S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 55 A TC = 25°C, pulse width limited by TJM IAR A TC = 25°C 55 A EAR TC = 25°C 60 mJ EAS TC = 25°C 3.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C - °C 2500 3000 V~ V~ TJ 1.6 mm (0.63 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight Symbol Test Conditions g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 1 mA 500 VGH(th) V DS = VGS, ID = 8 mA 3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS VDS = VDSS V GS = 0 V RDS(on) V 5.5 V ±200 nA TJ = 25°C TJ = 125°C 100 3 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 85 mΩ © 2001 IXYS All rights reserved miniBLOC, SOT-227 B E153432 S G 220 TJ 500 V 55 A Ω 85 mΩ G S IDM = = = S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features l RF capable Mosfets l Rugged polysilicon gate cell structure l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l Pulse generation l Laser drivers Advantages l Easy to mount l Space savings l High power density 98854 (8/01) IXFN 55N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 22 33 S 6700 pF 1250 pF Crss 330 pF td(on) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 ns td(off) RG = 1 Ω (External), 45 ns 9.6 ns 195 nC 50 nC 95 nC Qg(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.21 RthCK K/W 0.05 Source-Drain Diode M4 screws (4x) supplied Dim. tf Qgs miniBLOC, SOT-227 B K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM IF = 50A, -di/dt = 100 A/µs, VR = 100 V 55 A 220 A 1.5 V 250 ns µC A 1.6 13 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025