CYSTEKEC MTB3D0N04J3-0-T3-G N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB3D0N04J3
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
40V
96.6A(silicon limit)
56A(package limit)
3.0 mΩ(typ)
3.5 mΩ(typ)
Outline
TO-252(DPAK)
MTB3D0N04J3
G
D S
G:Gate D:Drain S:Source
Ordering Information
Device
MTB3D0N04J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
VDS
VGS
Limits
40
±20
96.6
68.3
56
18.4
14.7
386
90
800
100
50
2.5
1.6
-55~+175
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 5)
ID
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 5)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
IDSM
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
IDM
Avalanche Current @ L=0.1mH
IAS
Single Pulse Avalanche Energy @ L=1mH, ID=40A, VDD=25V (Note 4)
EAS
TC=25°C
(Note 1)
PD
TC=100°C
(Note 1)
Power Dissipation
TA=25°C
(Note 2)
PDSM
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
Tj, Tstg
Unit
V
A
mJ
W
°C
Stress exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
RθJC
RθJA
Value
1.5
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=50A, VDD=25V
5. Calculated continuous current based on maximum allowable junction temperature. Guaranteed by design, not subject to 100%
production test. Current is limited to 56A by source bond technology.
MTB3D0N04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
40
1
-
0.03
29
3.0
3.5
2.5
±100
1
10
3.9
5.5
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=85°C
VGS =10V, ID=20A
VGS =4.5V, ID=20A
89.5
15
17.8
29.8
34.2
166
68.6
4951
476
260
1.0
120
30
36
6436
620
338
-
0.79
23.3
18.4
86
1.2
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*VSD
*trr
*Qrr
-
μA
mΩ
nC
VDD=20V, ID=20A,VGS=10V
ns
VDD=20V, ID=20A, VGS=10V, RG=10Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
VGS=0, IF=20A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB3D0N04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V,9V,8V,7V,6V,5V
250
ID, Drain Current (A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
300
200
4V
150
100
3.5V
50
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=3V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
9
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10
8
7
VGS=4.5V
6
5
4
3
2
VGS=0V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
1
0.2
0
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
3.2
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=20A
15
10
5
2.8
2.4
VGS=10V, ID=20A
RDS(ON) @Tj=25°C : 3.0mΩ typ.
2.0
1.6
1.2
0.8
0.4
0.0
0
0
MTB3D0N04J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.4
1.2
1
ID=1mA
0.8
0.6
0.4
ID=250μA
0.2
100
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
-65
30
-35
-5
85
115 145 175
Gate Charge Characteristics
100
10
VDS=10V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
55
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=15V
1
0.1
Ta=25°C
Pulsed
8
6
4
VDS=20V
ID=20A
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
10
20
30 40 50 60 70 80
Qg, Total Gate Charge(nC)
90 100
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
120
RDSON
Limited
100μs
1ms
100
10ms
100ms
10
1s
DC
TC=25°C, Tj=175°C
VGS=10V, RθJC=1.5°C/W
Single Pulse
1
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
25
100
silicon limit
80
60
package limit
40
20
VGS=10V, RθJC=1.5°C/W
0
0.1
0.1
MTB3D0N04J3
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100 125 150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
3000
300
250
TJ(MAX) =175°C
TC=25°C
RθJC=1.5°C/W
2400
2100
200
Power (W)
ID, Drain Current(A)
2700
VDS=10V
150
100
1800
1500
1200
900
600
50
300
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.5°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB3D0N04J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB3D0N04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB3D0N04J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C014J3
Issued Date : 2018.05.03
Revised Date :
Page No. : 9/ 9
TO-252 Dimension
Marking:
4
Device
Name
B3D0
N04
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB3D0N04J3
CYStek Product Specification
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