isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -55V(Min.) APPLICATIONS ·Designed for LF Large Signal Power Amplification and Medium Current Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 6.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX14A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -4V -1.7 V ICEX Collector Cutoff Current VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ -1.0 -5.0 mA hFE DC Current Gain IC= -0.5A; VCE= -4V 25 Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V 4 fT isc website：www.iscsemi.com CONDITIONS 2 MIN MAX UNIT 250 MHz isc & iscsemi is registered trademark