BZX85C... Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction Type Ordering Code BZX85C2V7–TAP BZX85C2V7–TR BZX85C2V7 Remarks Ammopack Tape and Reel Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4 mm, TL=25 °C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 110 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Document Number 85608 Rev. A4, 12-Mar-01 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V www.vishay.com 1 (5) BZX85C... Vishay Semiconductors Type BZX85C... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 IZT for VZT and rzjT V 1) 2.5 to 2.9 < 20 2.8 to 3.2 < 20 3.1 to 3.5 < 20 3.4 to 3.8 < 20 3.7 to 4.1 < 15 4.0 to 4.6 < 13 4.4 to 5.0 < 13 4.8 to 5.4 < 10 5.2 to 6.0 <7 5.8 to 6.6 <4 6.4 to 7.2 < 3.5 7.0 to 7.9 <3 7.7 to 8.7 <5 8.5 to 9.6 <5 9.4 to 10.6 <7 10.4 to 11.6 <8 11.4 to 12.7 <9 12.4 to 14.1 < 10 13.8 to 15.6 < 15 15.3 to 17.1 < 15 16.8 to 19.1 < 20 18.8 to 21.2 < 24 20.8 to 23.3 < 25 22.8 to 25.6 < 25 25.1 to 28.9 < 30 28 to 32 < 30 31 to 35 < 35 34 to 38 < 40 37 to 41 < 50 40 to 46 < 50 44 to 50 < 90 48 to 54 < 115 52 to 60 < 120 58 to 66 < 125 64 to 72 < 130 70 to 79 < 135 W rzjk at IZK mA < 400 1 < 400 1 < 400 1 < 500 1 < 500 1 < 500 1 < 500 1 < 500 1 < 400 1 < 300 1 < 300 1 < 200 0.5 < 200 0.5 < 200 0.5 < 200 0.5 < 300 0.5 < 350 0.5 < 400 0.5 < 500 0.5 < 500 0.5 < 500 0.5 < 600 0.5 < 600 0.5 < 600 0.5 < 750 0.25 < 1000 0.25 < 1000 0.25 < 1000 0.25 < 1000 0.25 < 1000 0.25 < 1500 0.25 < 1500 0.25 < 2000 0.25 < 2000 0.25 < 2000 0.25 < 2000 0.25 W IR at VR V < 150 1 < 100 1 < 40 1 < 20 1 < 10 1 <3 1 <3 1 <1 1.5 <1 2 <1 3 <1 4 <1 4.5 <1 6.2 <1 6.8 < 0.5 7.5 < 0.5 8.2 < 0.5 9.1 < 0.5 10 < 0.5 11 < 0.5 12 < 0.5 13 < 0.5 15 < 0.5 16 < 0.5 18 < 0.5 20 < 0.5 22 < 0.5 24 < 0.5 27 < 0.5 30 < 0.5 33 < 0.5 36 < 0.5 39 < 0.5 43 < 0.5 47 < 0.5 51 < 0.5 56 mA TKVZ %/K –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.07 to –0.02 –0.07 to –0.01 –0.03 to +0.04 –0.01 to +0.04 0 to +0.045 +0.01 to +0.055 +0.015 to +0.06 +0.02 to +0.065 0.03 to 0.07 0.035 to 0.075 0.04 to 0.08 0.045 to 0.08 0.045 to 0.085 0.05 to 0.085 0.055 to 0.09 0.055 to 0.09 0.06 to 0.09 0.06 to 0.09 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 Tighter tolerances available on request: BZX85B... ± 2% of VZnom www.vishay.com 2 (5) Document Number 85608 Rev. A4, 12-Mar-01 BZX85C... Vishay Semiconductors Characteristics (Tj = 25_C unless otherwise specified) 1000 C D – Diode Capacitance ( pF ) Ptot – Total Power Dissipation ( W ) 2.0 1.6 1.2 l=4mm 0.8 l=10mm l=20mm 0.4 0 –50 0 50 100 f = 1 MHz Tamb= 25°C 0 10 20 30 40 50 60 VZ – Z-Voltage ( V ) 95 9616 Figure 3. Diode Capacitance vs. Z–Voltage 250 1000 r Z – Differential Z-Resistance ( W ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 10 200 150 Figure 1. Total Power Dissipation vs. Ambient Temperature 200 150 l l 100 50 IZ=1mA 0 5 10 15 20 25 2mA 100 5mA 10mA 20mA 10 TL=constant 0 1 30 1 l – Lead Length ( mm ) 95 9613 100 10 VZ – Z-Voltage ( V ) 95 9615 Figure 2. Thermal Resistance vs. Lead Length Z thp – Thermal Resistance for Pulse Cond. (K/W) VR = 0V VR = 2V VR = 5V VR = 20V VR = 30V 1 Tamb – Ambient Temperature ( °C ) 95 9612 100 Figure 4. Differential Z–Resistance vs. Z–Voltage 1000 tp/T=0.01 tp/T=0.1 100 tp/T=0.5 RthJA=110K/W DT=Tjmax–Tamb tp/T=0.02 tp/T=0.05 tp/T=0.2 10 Single Pulse iZM=(–VZ+(VZ2+4rzj 1 10–1 95 9614 100 101 102 DT/Zthp)1/2)/(2rzj) 103 tp – Pulse Length ( ms ) Figure 5. Thermal Response Document Number 85608 Rev. A4, 12-Mar-01 www.vishay.com 3 (5) BZX85C... Vishay Semiconductors Dimensions in mm Cathode Identification technical drawings according to DIN specifications 94 9368 ∅ 0.85 max. ∅ 2.5 max. Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3 g www.vishay.com 4 (5) 26 min. 4.1 max. 26 min. Document Number 85608 Rev. A4, 12-Mar-01 BZX85C... Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85608 Rev. A4, 12-Mar-01 www.vishay.com 5 (5) Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1