MACOM MAAP-000077-SMB004 Amplifier, power, 13w 0.7-2.5 ghz Datasheet

Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
Features
♦ 13 Watt Saturated Output Power Level
♦ Eutectically Mounted to Heat Spreader
♦ Next level integration is a Silver Epoxy-Based Process
♦ Variable Drain Voltage (6-10V) Operation
♦ MSAG™ Process
Description
The MAAPGM0077-PED000 is a 2-stage 13W power amplifier with on-chip bias networks eutectically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal.
This product is fully matched to 50 ohms on both the input and output. It can be used
as a power amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested at
the die-on-pedestal assembly level to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes,
planar processing of ion implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Also Available in:
Primary Applications
♦
♦
♦
♦
Point-to-Point Radio
SatCom
Radio Location
Radar
Description
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
Mechanical Sample (Die)
Part Number
MAAP-000077-PKG001
MAAP-000077-SMB004
MAAP-000077-SMB001
MAAP-000077-MCH000
Electrical Characteristics: T B = 60°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 3.8A2, Pin = 22 dBm, RG=30 Ω
Parameter
1.
2.
Symbol
Typical
Units
Bandwidth
f
0.7-2.5
GHz
Output Power
POUT
41
dBm
1-dB Compression Point
P1dB
41
dBm
Small Signal Gain
G
23
dB
Power Added Efficiency
PAE
26
%
Input VSWR
VSWR
1.7:1
Output VSWR
VSWR
1.6:1
Gate Current
IGG
20
mA
Drain Current
IDD
4.9
A
2nd Harmonic (1.5GHz)
2f
26
dBc
2nd Harmonic (2.0GHz)
2f
47
dBc
TB = MMIC Base Temperature
Adjust VGG between –2.6 and –1.5V to achieve specified Idq.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
Maximum Ratings3
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
28
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
6.0
A
Quiescent DC Power Dissipated (No RF)
PDISS
60
W
Junction Temperature
TJ
17
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
6.0
10.0
10.0
V
Gate Voltage
VGG
-2.6
-2.0
-1.2
V
Input Power
PIN
22
25
dBm
Thermal Resistance
ΘJC
2.6
MMIC Base Temperature
TB
°C/W
Note 5
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ
Power Derating Curve, Quiescent (No RF)
70
Operating Instructions
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
60
Peak Power Dissipation [Watts]
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
50
40
30
20
10
0
-40
-20
0
20
40
60
80
100
120
140
160
180
Maximum Allowable Base Temperature [°C]
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
50
50
47
45
47
44
40
44
41
35
41
38
30
38
35
25
32
20
29
15
29
26
10
26
5
23
Pout
PAE
23
20
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
P1dB (dBm)
50
PAE (%)
Pout (dBm)
All Data is at 60ºC MMIC base temperature, CW stimulus, unless otherwise noted.
35
32
6V
8V
10V
20
0.50
0
3.00
0.75
1.00
1.25
1.50
2.00
2.25
2.50
2.75
3.00
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
Figure 1. Output Power and Pow er Added Efficie nc y
at VD = 10V, Pin = 2 2dB m, and 25 % IDSS
50
50
47
47
44
44
41
41
38
Psat (dBm)
Psat (dBm)
1.75
Frequency (GHz)
Frequency (GHz)
35
32
29
38
35
32
29
6V
8V
10V
26
23
20
0.50
0.75
3ºC
60ºC
100ºC
26
23
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
20
0.50
3.00
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Frequency (GHz)
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at
25% IDSS
Figure 4. Saturated Output Power vs. Frequency and Temperature at
10V and 25% IDSS
6
30
50
5.5
46
5.4
42
5.3
38
5.2
34
5.1
30
5.0
26
4.9
5
24
22
4
18
Gain
Input VSWR
Output VSWR
16
14
VSWR
Gain (dB)
20
3
12
10
8
2
6
Output Power (dBm), SSG(dB),
PAE (%)
26
22
4.8
Pout
SSG
PAE
IDS
18
4
14
2
0
0.50
1
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
4.7
4.6
10
4.5
30
40
50
60
70
80
90
100
110
120
130
140
150
Frequency (GHz)
Junction Temperature (ºC)
Figure 5. Small Signal Gain and Input and Output VSWR
at 25% IDSS, VD = 10V
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 1.5 GHz, and 25% IDSS
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Drain Current (A)
28
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
All Data is at 60ºC MMIC base temperature, CW stimulus, unless otherwise noted.
50
30
48
28
46
44
26
Output Power (dBm)
42
24
40
Gain (dB)
38
36
34
32
1 GHz
1.5 GHz
2 GHz
2.5 GHz
30
28
26
22
20
18
16
1 GHz
1.5 GHz
2 GHz
14
24
12
22
20
10
4
6
8
10
12
14
16
18
20
22
24
26
25
28
29
31
33
35
37
39
41
43
Output Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS
Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS
50
45
6.0
45
5.5
1 GHz
1.5 GHz
2 GHz
2.5 GHz
40
5.0
4.5
Drain Current (A)
35
PAE (%)
27
Input Power (dBm)
30
25
20
15
4.0
3.5
3.0
2.5
1 GHz
1.5 GHz
2 GHz
2.5 GHz
10
2.0
5
1.5
0
4
6
8
10
12
14
16
18
20
22
24
26
1.0
28
4
Input Power (dBm)
6
8
10
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
25% IDSS
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS
30
50
48
28
46
26
44
24
40
38
Gain (dB)
Output Power (dBm)
42
36
34
32
28
26
20
18
1 GHz
1.5 GHz
2 GHz
2.5 GHz
30
22
16
14
1 GHz
1.5 GHz
2 GHz
24
12
22
20
10
4
6
8
10
12
14
16
18
20
22
24
26
28
25
27
29
31
33
35
37
39
41
43
Input Power (dBm)
Output Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS
Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
45
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
All Data is at 60ºC MMIC base temperature, CW stimulus, unless otherwise noted.
50
6.0
45
5.5
1 GHz
1.5 GHz
2 GHz
2.5 GHz
40
5.0
4.5
Drain Current (A)
PAE (%)
35
30
25
20
15
4.0
3.5
3.0
2.5
1 GHz
1.5 GHz
2 GHz
2.5 GHz
10
2.0
5
1.5
0
6
8
10
12
14
16
18
20
22
24
26
28
1.0
4
Input Power (dBm)
12
14
16
18
20
22
24
26
28
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS
10
90
41
9
37
8
33
7
29
6
25
5
4 dBm
Output Power (dBm), PAE (%)
Harmonic (dBc)
10
45
8 dBm
12 dBm
70
16 dBm
20 dBm
60
24 dBm
50
40
nd
2
8
100
80
30
20
21
4
Pout 10%
PAE 10%
Pout 25%
PAE 25%
IDS 10%
IDS 25%
17
13
10
9
0
3
2
1
5
0.50
5
6
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
25% IDSS
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Drain Current (A)
4
0
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Frequency (GHz)
Frequency (GHz)
Figure 15. Second Harmonic vs. Frequency and Input Power at 10V and 25%
IDSS
Figure 16. Output Power, Power Added Efficiency, and Drain Current vs.
Frequency and %IDSS at 10V.
Figure 17. Fixture used to characterize MAAPGM0077-DIE
under CW stimulus.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
Mechanical Information
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 18. Die Layout
Bond Pad Dimensions
Pad
Pad No.
Size (μm)
Size (mils)
RF In and Out
1
100 x 200
4x8
DC Drain Supply Voltage VD1
2
200 x 150
8x6
DC Drain Supply Voltage VD2
3
500 x 200
20 x 8
DC Gate Supply Voltage VG1
4
150 x 150
6x6
DC Gate Supply Voltage VG2
5
150 x 125
6x5
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
Recommended Layout and Wire Bonding Configuration
GND
In implementing the DC/ RF crossover shown, the following rules must applied.
1.
2.
3.
4.
the DC crossovers should approach and cross the RF trace at a 90 degree angle;
the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge;
the rated current capability of the DC crossovers should be greater than the maximum current of the device; and
the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height.
Power Supply Sequencing:
Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
Die Handling:
Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/
Application%20Notes/index.htm.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 13W
0.7-2.5 GHz
MAAP-000077-PED000
Rev —
Preliminary Datasheet
Next Level Assembly Instructions:
Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die
on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 19.
To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy.
Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with
bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC
are not recommended for use in attaching these IC assemblies.
DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC
assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE
range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively.
Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly
attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be
maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and
thereby the MTTF.
The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils
making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band.
This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly
RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal
power transfer. Shorter RF bond wires result in improved RF performance.
In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC
assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high
number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC
assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC
assembly and mating substrates is recommended.
8
Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although
ball bonds are also acceptable.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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