AP3P028LM
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
-30V
▼ Fast Switching Characteristic
RDS(ON)
28mΩ
▼ Capable of 2.5V Gate Drive
ID
D
G
▼ RoHS Compliant & Halogen-Free
3
-7.7A
S
Description
D
AP3P028L series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
D
D
D
G
S
S
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+12
V
-7.7
A
-6.1
A
-30
A
2.5
W
7.2
mJ
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 4.5V
3
Drain Current , VGS @ 4.5V
Pulsed Drain Current
IDM
PD@TA=25℃
1
Total Power Dissipation
3
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Value
Unit
50
℃/W
1
201704281
AP3P028LM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-4.5V, ID=-7A
-
-
28
mΩ
VGS=-2.5V, ID=-4A
-
-
36
mΩ
-0.5
-
-1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-7A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-7A
-
21
10.7
nC
Qgs
Gate-Source Charge
VDS=-15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-1A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
170
-
ns
tf
Fall Time
VGS=-5V
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
2100 3360
pF
Coss
Output Capacitance
VDS=-15V
-
185
-
pF
Crss
Reverse Transfer Capacitance
-
135
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
7.5
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10s ; 125 ℃/W when mounted on Min. copper pad.
4.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3P028LM
30
40
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
30
T A = 150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
20
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
10
10
0
0
0
2
4
6
8
0
10
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
2.0
I D = -7A
V G = -4.5V
I D = -4 A
o
T A =25 C
1.6
24
.
Normalized RDS(ON)
RDS(ON) (mΩ)
28
1.2
0.8
20
0.4
16
0.0
1
2
3
4
5
-100
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
I D = -250uA
1.6
T j =150 o C
Normalized VGS(th)
-IS(A)
6
T j =25 o C
4
1.2
0.8
2
0.4
2.01E+09
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3P028LM
f=1.0MHz
4000
8
3000
6
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -7 A
V DS = -15V
4
2000
2
1000
C iss
C oss
C rss
0
0
0
10
20
30
1
40
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
-ID (A)
10
Operation in this
area limited by
RDS(ON)
100us
1
.
1ms
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
DC
0.01
0.01
0.1
1
10
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125 oC/W
0.001
0.0001
100
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
V DS = -5V
-ID , Drain Current (A)
-ID , Drain Current (A)
8
20
10
T j =150 o C
o
T j =25 C
6
4
2
2.01E+09
o
T j = -55 C
0
0
0
1
2
3
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Drain Current v.s. Ambient Temperature
4
AP3P028LM
4
2
I D = -1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
3
2
1
0.4
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
160
T j =25 o C
RDS(ON) (mΩ)
120
80
.
40
-2.5V
V GS = -4.5V
0
0
4
8
12
16
20
24
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP3P028LM
MARKING INFORMATION
Part Number
3P028L
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6