Mitsubishi MGF0916A High-power gaas fet (small signal gain stage) Datasheet

< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
 High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
 High power gain
Gp=19dB(TYP.) @f=1.9GHz
 High power added efficiency
add=30%(TYP.) @f=1.9GHz,Pin=5dBm
 Hermetic Package
APPLICATION
 For UHF Band power amplifiers
QUALITY
Fig.1
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=6V
Delivery
 Ids=100mA
 Rg=1k
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
Symbol
VGSO
(Ta=25C)
Parameter
Gate to sourcebreakdown voltage
VGDO Gate to drain breakdown voltage
Ratings
Unit
-8
V
-8
V
mA
ID
Drain current
250
IGR
Reverse gate current
-0.6
mA
IGF
Forward gate current
1.5
mA
PT
Total power dissipation
1.5
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
150
200
250
mA
VGS(off)
gm
Gate to source cut-off voltage
VDS=3V,ID=0.1mA
-1.5
-
-4.5
V
Transconductance
VDS=3V,ID=100mA
-
90
-
mS
Po
add
Output power
Power added Efficiency
VDS=6V,ID=100mA,f=1.9GHz
Pin=5dBm
-
23
30
-
dBm
%
GLP
Linear Power Gain
VDS=6V,ID=100mA,f=1.9GHz
-
19
-
dB
NF
Noise figure
-
1
-
dB
Rth(ch-c)
Thermal Resistance
Vf Method
-
70
100
C/W
*1:Channel to case /
*1
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
50
24
VDS=6V
45
22
ID=0.1A
40
20
f=1.9GHz
35
Po
PAE
18
16
30
25
Gp
14
20
12
15
10
10
8
5
6
0
-15
-10
-5
0
Pin(dBm)
5
10
Gp(dB),PAE(%)
Po(dBm)
26
15
IM3,Po(SCL) vs. Pi(SCL)
20
Po(SCL) (dBm)
10
VD=6V
ID=100mA
f1=1.90GHz
f2=1.91GHz
10
0
Po
-10
0
-20
IM3
-10
-30
-20
-40
-30
-50
-40
-60
-25
-20
-15
-10
-5
Pi(SCL) (dBm)
Publication Date : Apr., 2011
2
0
5
10
IM3 (dBc)
30
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A S PARAMETERS
freq.
(MHz)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
(Ta=25C,VD=6V,ID=100mA, Reference Plane see Fig.1)
S11
(mag)
0.954
0.915
0.887
0.866
0.852
0.844
0.829
0.822
0.813
0.806
0.802
0.792
0.779
0.763
0.741
0.714
0.688
0.660
0.628
0.590
0.540
0.477
0.400
0.311
0.217
0.126
0.073
0.113
0.188
0.260
S21
(ang)
-40.32
-62.48
-80.56
-95.15
-106.84
-116.18
-123.68
-129.83
-135.06
-139.74
-144.18
-148.63
-153.25
-158.12
-163.24
-168.50
-173.69
-178.49
176.97
172.29
167.52
162.13
155.63
146.74
133.83
110.51
51.97
-5.75
-27.30
-36.27
(mag)
7.263
6.256
5.395
4.664
4.047
3.529
3.099
2.743
2.452
2.215
2.025
1.874
1.755
1.661
1.589
1.533
1.490
1.457
1.430
1.409
1.391
1.374
1.358
1.342
1.325
1.306
1.286
1.262
1.236
1.206
(ang)
145.11
126.36
110.17
96.15
83.93
73.20
63.67
55.09
47.23
39.92
32.99
26.30
19.72
13.18
6.57
-0.16
-7.07
-14.20
-21.60
-29.29
-37.32
-45.70
-54.48
-63.70
-73.41
-83.66
-94.52
-106.08
-118.45
-131.74
S12
(mag)
0.016
0.023
0.027
0.029
0.030
0.030
0.030
0.029
0.029
0.028
0.028
0.028
0.029
0.030
0.031
0.033
0.036
0.038
0.041
0.044
0.047
0.050
0.054
0.057
0.061
0.065
0.070
0.075
0.081
0.088
S22
(ang)
60.06
45.59
32.76
21.52
11.83
3.59
-3.30
-8.97
-13.57
-17.24
-20.15
-22.48
-24.39
-26.06
-27.67
-29.37
-31.33
-33.68
-36.55
-40.05
-44.27
-49.26
-55.06
-61.67
-69.05
-77.14
-85.81
-94.92
-104.26
-113.56
(mag)
0.477
0.509
0.543
0.578
0.613
0.646
0.679
0.708
0.736
0.760
0.782
0.801
0.817
0.831
0.843
0.853
0.861
0.868
0.874
0.879
0.883
0.886
0.888
0.888
0.886
0.880
0.871
0.857
0.836
0.806
(ang)
-37.47
-57.48
-73.42
-86.07
-96.10
-104.09
-110.51
-115.77
-120.19
-124.02
-127.46
-130.64
-133.65
-136.55
-139.35
-142.06
-144.65
-147.09
-149.36
-151.43
-153.28
-154.93
-156.42
-157.81
-159.22
-160.83
-162.85
-165.57
-169.37
-174.68
2.0
Gate Mark
Round corner
0.8
0.80
Gate Mark
(1)
(1)
(3)
2.8
1.20
4.20
Reference Plane
Reference Plane
(2)
(2) 0.6
0.25
4.00
2.5
0.3
(1) Gate
(2) Drain
(3) Source
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Publication Date : Apr., 2011
3
K
MAG/MSG
0.25
0.32
0.37
0.44
0.51
0.60
0.72
0.84
0.93
1.05
1.09
1.16
1.17
1.19
1.22
1.23
1.19
1.21
1.21
1.23
1.27
1.33
1.36
1.40
1.40
1.39
1.36
1.35
1.36
1.42
(dB)
26.57
24.35
23.01
22.06
21.30
20.71
20.14
19.76
19.27
17.60
16.73
15.86
15.29
14.78
14.24
13.79
13.50
13.08
12.67
12.17
11.56
10.94
10.41
9.95
9.62
9.31
9.08
8.73
8.26
7.52
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
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Publication Date : Apr., 2011
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