Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process Description The MAAP-000079-PED000 is a 3 stage 18W power amplifier with on-chip bias networks, eutectically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ SatCom ♦ Commercial Avionics ♦ Radar Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000079-PKG001 MAAP-000079-SMB004 MAAP-000079-SMB001 MAAP-000079-MCH000 Electrical Characteristics: T B = 40°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 4A2, Pin = 18 dBm, Rg = 20 Ω Parameter 1 1. 2. Symbol Typical Units Bandwidth f 7.5-10.5 GHz Output Power POUT 42.5 dBm Output Power, 8-10 GHz POUT 43 dBm 1-dB Compression Point P1dB 42 dBm Small Signal Gain G 29 dB Power Added Efficiency PAE 30 % Input VSWR VSWR 2.5:1 Output VSWR VSWR 2.5:1 Gate Current IGG 50 mA Drain Current, under RF Drive IDD 6 A Output Third Order Intercept TOI 48 dBm Output Third Order Intermod, Pout = 39 dBm (DCL) IM3 18.5 dBc TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.5V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 23 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 6.5 A Quiescent DC Power Dissipated (No RF) PDISS 65 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 10.0 10.0 V Gate Voltage VGG -2.6 -2.2 -1.5 V Input Power PIN 18.0 21.0 dBm Thermal Resistance ΘJC 3.0 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 80 Operating Instructions 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 70 Peak Power Dissipation [Watts] This device is static sensitive. Please handle with care. To operate the device, follow these steps. 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [°C] 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet 50 50 48 46 48 46 42 46 44 38 42 34 40 30 38 26 POUT PAE Output Power (dBm) 50 PAE (%) POUT (dBm) All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 44 42 40 22 34 18 34 32 14 32 10 11.0 30 30 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 VDS=10V 38 36 VDS=8V 36 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 Frequency (GHz) Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage Figure 1. Output Power and Power Added Efficiency vs. Frequency at V DD = 10V and P in = 18 dBm 50 45 40 48 42 37 46 39 34 44 36 31 4.5 42 33 28 4.0 40 30 25 3.5 38 27 22 3.0 36 24 19 2.5 21 16 2.0 32 18 13 1.5 30 15 11.0 10 6.0 5.5 Gain @ 10V PO UT : VDS=10V 34 7.5 8.0 8.5 PAE : VDS=8V 9.0 9.5 10.0 10.5 5.0 Output VSWR 1.0 7 7.5 8 8.5 6.8 41 6.6 39 6.4 37 6.2 35 6.0 33 5.8 31 5.6 Pout SSG PAE IDS 10.5 11 45 40 35 30 7.5 GHz 8.5 GHz 9.5 GHz 10.5 GHz 5.4 25 5.2 25 40 10 50 Output Power (dBm) 7.0 43 Current (A) Pout (dBm), Gain (dB), PAE (%) 45 30 9.5 Figure 4. Small Signal Gain and Input and Output VSWR vs. Frequency. Figure 3. Saturated Output Power and Power Added Efficiency vs. Frequency and Drain Voltage 27 9 Frequency (GHz) Frequency (GHz) 29 VSWR Relative Gain (dB) POUT : VDS=8V PAE : VDS=10V 7.0 PAE (%) POUT (dBm) Input VSWR 50 60 70 80 90 100 110 120 130 140 5.0 150 Junction Temperature (ºC) Fig 5. Output Power, Power Added Efficiency, and Drain Current vs. Junction Temperature at VD=10V, f=9GHz, and Pin =18dBm. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 20 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Figure 6. Output Power vs. Input Power at VDD = 10V • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 40 8 7.5 GHz 8.5 GHz 9.5 GHz 10.5 GHz 35 30 7 6 5 IDS (A) PAE (%) 25 20 15 4 3 10 10.5 GHz 1 0 -2 0 2 4 6 8 10 12 14 16 18 20 22 0 24 2 Input Power (dBm) 4 6 8 10 12 14 16 18 20 41 43 22 Input Power (dBm) Figure 8. Drain Current vs. Input Power at V DD = 10V Fig 7. Power Added Efficiency vs. Input Power at VD =10V. 35 35 33 33 31 31 29 29 Relative Gain (dB) Relative Gain (dB) 8.5 GHz 9.5 GHz 2 5 27 25 23 21 27 25 23 21 19 7.5 GHz 19 7.5 GHz 17 9.0 GHz 10.5 GHz 17 9.0 GHz 10.5 GHz 15 15 25 27 29 31 33 35 37 39 41 43 45 25 27 29 31 Output Power (dBm) 33 35 37 39 45 Output Power (dBm) Figure 9. Relative Gain vs. Output Pow er by Frequency at VD =8V and 25% IDSS Figure 10. Relative Gain vs. Output Power by Frequency at VD=10V and 25% IDSS 60 100 58 8 GHz 90 8 GHz 56 9 GHz 10 GHz 80 9 GHz 10 GHz 54 70 52 60 IMD3 (dBc) TOI (dBm) 7.5 GHz 50 48 50 40 46 30 44 20 42 10 40 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 12 14 16 18 20 22 24 26 28 30 32 34 36 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 11. Third Order Intercept vs. Output Power and Frequency at 8V. Figure 12. Third Order Intermod vs. Output Power and Frequency at 8V. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 38 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 100 60 56 8 GHz 9 GHz 10 GHz 80 54 70 52 60 IMD3 (dBc) TOI (dBm) 90 8 GHz 9 GHz 10 GHz 58 50 48 50 40 46 30 44 20 42 10 40 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 12 14 16 Fundamental Output Power, Single Tone (dBm) 22 24 26 28 30 32 34 36 38 Figure 14. Third Order Intermod vs. Output Power and Frequency at 10V. 60 60 55 58 8 GHz 9 GHz 10 GHz 56 8 GHz 9 GHz 10 GHz 50 54 45 52 40 IMD3 (dBc) TOI (dBm) 20 Fundamental Output Power per Tone (dBm) Figure 13. Third Order Intercept vs. Output Power and Frequency at 10V. 50 48 35 30 46 25 44 20 42 15 10 40 -30 -25 -20 -15 -10 -5 0 5 -30 -25 -20 -15 -10 -5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 MMIC Base Temperature (ºC) MMIC Base Temperature (ºC) Figure 15. Third Order Intercept vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. Figure 16. Third Order Intermod vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. 60 100 58 90 10% IDSS 25% IDSS 56 10% IDSS 25% IDSS 80 54 70 52 60 IMD3 (dBc) TOI (dBm) 18 50 48 50 40 46 30 44 20 42 10 40 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and %IDSS at 10V and 9GHz. Figure 18. Third Order Intermod vs. Output Power and %IDSS at 10V and 9GHz. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Figure 19. Fixture used to characterize MAAPGM0079-DIE under CW stimulus. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Mechanical Information Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 20. Die Layout Bond Pad Dimensions Pad Pad No. Size (μm) Size (mils) RF In and Out 1 100 x 200 4x8 DC Drain Supply Voltage VD1,2 2 200 x 150 8x6 DC Drain Supply Voltage VD3 3 500 x 200 20 x 8 DC Gate Supply Voltage VG1,2 4 150 x 150 6x6 DC Gate Supply Voltage VG3 5 150 x 125 6x5 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Recommended Layout and Wire Bonding Configuration GND In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. Power Supply Sequencing: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Die Handling: Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. 8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Next Level Assembly Instructions: Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 20. 50O Transmission Line IC Pedestal 5-10 mils 15 mil Alumina Housing/Carrier <1.5 mil High Thermal Conductivity Ag Epoxy Standard Attach Ag Epoxy Figure 20. Cross-section of die-on-pedestal integration at next level assembly To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC are not recommended for use in attaching these IC assemblies. DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively. Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and thereby the MTTF. The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band. This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal power transfer. Shorter RF bond wires result in improved RF performance. In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC assembly and mating substrates is recommended. 9 Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.