600V 31A 0.100Ω
APT31N60BCS
APT31N60SCS
APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction MOSFET
COOLMOS
(B)
TO
Power Semiconductors
-2
47
D3PAK
• Ultra Low RDS(ON)
(S)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
D
• Avalanche Energy Rated
• Extreme dv/dt Rated
G
• Popular TO-247 or Surface Mount D3 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT31N60B_SCS(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
31
Continuous Drain Current @ TC = 100°C
19
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
255
Watts
Linear Derating Factor
2.00
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
93
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
MOSFET dv/dt Ruggedness (VDS = 480V)
50
V/ns
11
Amps
Avalanche Current
2
2
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1.2
3
mJ
800
STATIC ELECTRICAL CHARACTERISTICS
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
2
TYP
MAX
Volts
600
(VGS = 10V, ID = 18A)
0.100
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
10
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Ohms
µA
TBD
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
UNIT
2.1
±100
nA
3.9
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
2-2006
Characteristic / Test Conditions
050-7238 Rev A
Symbol
APT31N60B_SCS(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
5
VGS = 10V
Gate-Source Charge
VDD = 400V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
28
65
14
22
10
5
110
VGS = 15V
VDD = 400V
ID = 18A @ 25°C
RG = 3.3Ω
5
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
290
ID = 18A, RG = 4.3Ω
125
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
170
ID = 18A, RG = 4.3Ω
100
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
MAX
3055
3260
RESISTIVE SWITCHING
Turn-off Delay Time
tf
TYP
ID = 18A @ 25°C
Rise Time
td(off)
MIN
UNIT
pF
85
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
MIN
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
4
MAX
18
(Body Diode)
93
(VGS = 0V, IS = - 18A)
1.2
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -18A, dl S/dt = 100A/µs)
450
ns
Q rr
Reverse Recovery Charge (IS = -18A, dl S/dt = 100A/µs)
12
µC
dv
/dt
Peak Diode Recovery
dv/ 7
dt
4
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
RθJC
Junction to Case
0.5
RθJA
Junction to Ambient
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.50
D = 0.9
0.40
0.7
0.30
Note:
0.3
t1
t2
0.10
0
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7238 Rev A
1-2006
0.60
0.20
SINGLE PULSE
0.1
0.05
10-5
10-4
°C/W
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
Junction
temp. (°C)
0.283
0.00355
Power
(watts)
0.216
0.727
70
50
40
60
50
TJ = -55°C
TJ = +25°C
TJ = +125°C
10
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
10
4.5V
1.40
NORMALIZED TO
VGS = 10V @ 18A
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
1.15
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
I = 18A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1-2006
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
5V
050-7238 Rev A
ID, DRAIN CURRENT (AMPERES)
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
70
20
20
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
5.5V
30
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
VDS> ID(ON) x RDS(ON) MAX.
40
6V
60
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
6.5V
80
Case temperature. (°C)
90
15 & 10V
90
ID, DRAIN CURRENT (AMPERES)
RC MODEL
100
APT31N60B_SCS(G)
100
93
10
100µS
5
1mS
1
10mS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I = 18A
D
14
12
VDS=120V
10
VDS=300V
8
6
VDS=480V
4
2
0
10
20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
40
120
V
DD
R
100
35
30
= 400V
tr and tf (ns)
td(on) and td(off) (ns)
200
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
45
td(off)
140
= 4.3Ω
G
T = 125°C
J
L = 100µH
80
tf
25
V
DD
= 400V
20
R
60
15
T = 125°C
J
L = 100µH
40
10
td(on)
20
0
0
5
10
15
ID (A)
20
25
0
30
DD
G
J
on
0
5
includes
diode reverse recovery.
300
Eon
200
Eoff
100
0
5
15
ID (A)
20
25
30
Eoff
300
250
200
Eon
150
V
DD
10
15
20
25
30
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
= 400V
I = 18A
100
D
T = 125°C
J
L = 100µH
50
0
10
350
L = 100µH
E
tr
400
= 400V
= 4.3Ω
T = 125°C
400
= 4.3Ω
FIGURE 15, RISE AND FALL TIMES vs CURRENT
SWITCHING ENERGY (mJ)
V
R
G
5
FIGURE 14, DELAY TIMES vs CURRENT
500
SWITCHING ENERGY (mJ)
101
100
160
1-2006
Coss
102
Crss
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
050-7238 Rev A
103
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
0
C, CAPACITANCE (pF)
Ciss
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
50
APT31N60B_SCS(G)
204
104
OPERATION HERE
LIMITED BY R
(ON)
DS
0
E
on
includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT31N60B_SCS(G)
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(on)
td(off)
tr
TJ125°C
tf
Drain Voltage
Drain Current
90%
90%
5%
5%
10%
Drain Voltage
10%
Drain Current
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DQ60
VDD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
D PAK Package Outline
TO-247 Package Outline
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7238 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
1-2006
3.50 (.138)
3.81 (.150)