DSK FR306 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
FR301---FR307
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 27
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 unces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR
301
FR
302
FR
303
FR
304
FR
305
FR
306
FR
307
UNITS
Maximum recurrent peak reverse voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
3.0
A
IFSM
200.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
10.0
IR
150
250
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
CJ
32
Typical thermal resistance
(Note3)
RθJA
22
TJ
- 55---- +150
TSTG
- 55---- + 150
Operating junction temperature range
Storage temperature range
A
200.0
500
ns
pF
/W
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
FR301---FR307
FIG.2--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
FIG.1 -- FORWARD DERATING CURVE
4
3
2
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1
0
0
25
50
75
100
125
150
175
200
175
125
100
75
50
25
0
1
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
60
40
20
10
TJ=25
f=1MHz
2
1
.2
.4
1.0
2 4
10 20
4
20
8 10
40 60 80 100
FIG.4 --TYPICAL FORWARD CHARACTERISTIC
100
.1
2
NUMBER OF CYCLES AT 60 Hz
FIG.3--TYPICAL JUNCTION CAPACITANCE
4
TJ=125
8.3ms Single Half
Sine-Wave
150
40
100
REVERSE VOLTAGE,VOLTS
100
10
TJ=25
Pulse Width=300 µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
1.0
1.2
1.4
1.6 1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
1
N.1.
OSCILLOSCOPE
(NOTE 1)
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
SET TIMEBASEFOR50/100 ns /cm
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
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