Rohm DTA114WUA -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA114WE / DTA114WUA / DTA114WKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
 Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2)The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
4)Higher mounting densities can be achieved.
Basic ordering unit (pieces)
0.2
0.15
1.0
(1) GND
Each lead has same dimensions
(2) IN
(3) OUT
Abbreviated symbol : 74
2.0
<SC-70>
0.9
0.15
1.3
(1) GND
(2) IN
(3) OUT
T146
3000
−
−
Each lead has same dimensions
Abbreviated symbol : 74
2.9
SMT3
−
0.1Min.
0.65 0.65
Taping Taping Taping
−
−
2.1
1.25
(1)
(2)
T106
3000
−
0.7
0.2
0.3
(3)
EMT3 UMT3 SMT3
TL
3000
0.1Min.
(1)
0.5 0.5
 Packaging specifications
Part No.
1.6
0.8
(2)
0.2
UMT3
DTA114WE
DTA114WUA
DTA114WKA
0.55
0.3
(3)
 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Package
Packaging type
Code
0.7
1.6
<SC-59>
1.1
0.4
0.8
(3)
1.6
2.8
 Inner circuit
(2)
IN
0.15
(1) GND
(2) IN
(3) OUT
R2
GND(+)
IN
(1)
0.95 0.95
OUT
1.9
0.3Min.
R1
Each lead has same dimensions
Abbreviated symbol : 74
OUT
GND(+)
R1=10kΩ, R2=4.7kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTA114WE / DTA114WUA / DTA114WKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Supply voltage
Input voltage
Limits
Unit
VCC
VI
−50
V
−30 to +10
V
−100
−100
mA
IO
Output current
IC(Max.)
DTA114WE
Power
dissipation
Symbol
150
PD
DTA114WUA / DTA114WKA
mW
200
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Symbol
Min.
Typ.
Max.
VI(off)
−
VI(on)
−3
−
−
−0.8
−
V
VO(on)
−
−0.1
−0.3
V
II
VI= −5V
VCC= −50V , VI=0V
7
0.37
−
250
−0.88
−0.5
−
13
0.57
−
μA
R1
R2/R1
−
−
−
10
0.47
mA
GI
−
−
24
IO(off)
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
fT
∗
Unit
Conditions
VCC= −5V , IO= −100μA
VO= −0.3V , IO= −2mA
IO= −10mA , II= −0.5mA
IO= −10mA , VO= −5V
−
kΩ
−
MHz
−
−
VCE= −10V , IE=5mA , f=100MHz
 Electrical characteristic curves
−5m
−10
−5
Ta= −40°C
Ta= 25°C
−2
−1
Ta=100°C
−200m
−100m
−100μ
1k
VCC= −5V
−2m
−1m
Ta=100°C
Ta=100°C
−500μ
−200μ
Ta=25°C
Ta= −40°C
−100μ
−50μ
−20μ
−10μ
−5μ
−2μ
−1m
−10m
−100m
Fig.1 Input voltage vs. Output current
(ON characteristics)
−1
−1μ
−0.5
200
Ta= 25°C
100
Ta= −40°C
50
20
10
5
2
−1
−1.5
−2
−2.5
−3
−3.5
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
VO= −5V
500
DC CURRENT GAIN : GI
−20
−500m
OUTPUT VOLTAGE : VO(on) (V)
−10m
VO= −0.3V
−50
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
−100
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
−100μ
−1m
−10m
−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO / II= 20
−500m
Ta=100°C
−200m
Ta= 25°C
−100m
Ta= −40°C
−50m
−20m
−1m
−10m
−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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