Roithner ADL-80Y01TX Pumps for solid state lasers miniature low power green laser medical use Datasheet

AlGaAs Invisible Laser Diode
ADL-80Y01TX/TZ
2004/05 ver. 1.0
★ 808nm 200mW 5.6φ TO-Type
High Power Laser Diode
• Features
1. Standard 5.6φTO-type: easy for design, assembly and integration
2. Low operation current
3. Long operation lifetime, MTTF>10000 hrs
4. Cost effective
• Applications
1. Pumps for solid state lasers
2. Miniature low power green laser
3. Medical use
• Absolute maximum ratings
Parameter
Light output power
Reverse voltage (LD)
Case temperature
Storage temperature
Symbol Condition
PO
CW
VRL
TC
TS
-
Rating
200
2
-10~+50
-40~+75
TX
Unit
mW
V
o
C
o
C
TZ
• Electrical and optical characteristics (Tc=25 oC)
Parameter
Peak wavelength
Threshold current
Operating current
Operating voltage
Differential efficiency
Parallel divergence angle
Perpendicular divergence angle
Emission point accuracy
Symbol
λ
Typ.
808
55
Max.
811
75
Unit
nm
mA
Conditions
Ith
Min.
805
-
Iop
-
260
280
mA
Po=200mW
Vop
-
1.7
1.9
V
Po=200mW
η
θ//
θ⊥
ΔxΔyΔz
0.8
-
1
9
41
-
15
48
±80
mW/mA
degree
degree
um
Po=150-200mW
Po=200mW
Po=200mW
Precautions
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
recommended that always apply proper heat sink before the device is operating.
4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.
AlGaAs Invisible Laser Diode
ADL-80Y01TX/TZ
2004/05 ver. 1.0
L-I Curve vs. Temperature
300
250
80
o
Optical Power (mW)
o
20 C 30 C
o
40 C
Threshold Current (mA)
o
10 C
o
50 C
200
150
100
50
0
0
50
100
150
200
250
Threshold Current vs. Case Temperature
100
300
350
60
40
20
0
10
400
20
Operation Current (mA)
Differential Efficiency vs. Case Temperature
830
Oscillation Wavelength (nm)
Differential Efficiency (mW/mA)
1.2
1.1
1.0
0.9
0.8
10
20
30
30
40
50
Case Temperature (degree)
40
50
Oscillation Wavelength vs. Case Temperature
820
810
800
790
780
10
20
Case Temperature (degree)
30
40
50
Case Temperature (degree)
Power Dependence of Far Field Pattern
Power Dependence of Wavelength
12000
10000
Po = 200mW
6000
Intensity
Po = 150mW
4000
Po = 100mW
2000
0
Po = 50mW
-30
-20
-10
0
Angle (degree)
10
20
30
790
795
800
805
810
Oscillation Wavelength (nm)
815
820
Intensity
8000
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