MJ15003(NPN) RoHS MJ15004(PNP) RoHS SEMICONDUCTOR Nell High Power Products Complementary Silicon power transistors (20A / 140V / 250W) 13.10 Max. 26.00 Max. TAB 1.60 Φ20.00 Max. Φ1.00 1 16.85 2 TO-3 30.00 38.50 1 8.60 10.90 2 FEATURES 2- Φ 4.0 Thru. Designed for general-purpose switching and amplifier applications. DC current gain-hFE = 25 (Min) @ lC = 5 Adc All dimensions in millimeters High safe operation area (100% tested) 250W @ 50V INTERNAL SCHEMATIC DIAGRAM For low distortion complementary designs DESCRIPTION C (TAB) The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. C (TAB) (1) B (1) B (2) (2) E MJ15003(NPN) E MJ15004(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE VCBO Collector to base voltage (I E = 0) 140 V CEO Collector to emitter voltage (I B = 0) 140 V EBO Emitter to base voltage UNIT V dc 5 IC Collector current - continuous IB Base current - continuous IE Emitter current - continuous 20 5 25 T C = 25°C Total power dissipation A dc 250 W Derate above 25ºC 1.43 W/ºC Tj Junction temperature 200 T stg Storage temperature -65 to 200 PD ºC TL Maximum lead temperature for soldering purposes : 1/16” from case for ≤ 10 seconds 265 ºC VALUE UNIT 0.7 ºC/W *For PNP types voltage and current values are negative. THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL Rth(j-c) www.nellsemi.com PARAMETER Thermal resistance, junction to case Page 1 of 4 MJ15003(NPN) RoHS MJ15004(PNP) RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) ICEX CONDITIONS PARAMETER SYMBOL MIN MAX V CE = 140V, V BE(off) = 1.5V 100 µA V CE = 140V, V BE(off) = 1.5V, T C = 150°C 2.0 mA Collector cutoff current ICEO Collector cutoff current V CE = 140V, l B = 0 250 I EBO Emitter cutoff current V EBO = 5V, l C = 0 100 Collector to emitter sustaining voltage l C = 200mA, l B = 0 140 V CBO Collector to base voltage lE = 0 140 V EBO Emitter to base voltage lC = 0 5 Forward current transfer ratio (DC current gain) l C = 5A , V CE = 2V V CE(sat) * Collector to emitter saturation voltage l C = 5A, l B = 0.5A 1.0 V BE(on) * Base to emitter on voltage l C = 5A, V CE = 2V 2.0 Transition frequency (current gain - bandwidth product ) l C = 0.5A, V CE = 10V, f test = 0.5MH Z C ob Output capacitance V CB = 10V, I E = 0, f test = 1MHz l s/b * Second breakdown collector current with base forward baised µA V CEO (SUS) * h FE 25 V 150 V fT 5 V CE = 100V, t = 1s, non-repetitive 1 P D , Power dissipation, (W) 400 350 300 250 200 150 100 50 0 50 75 100 125 150 T C , Case temperature (°C) www.nellsemi.com pF A Fig.1 Power derating 25 MH Z 1000 V CE = 50V, t = 1s, non-repetitive *Pulsed : Pulse duration = 300 µs, duty cycle 2%. *For PNP types voltage and current values are negative. 0 2.0 Page 2 of 4 175 200 MJ15003(NPN) RoHS MJ15004(PNP) RoHS SEMICONDUCTOR Nell High Power Products l C , Collector current, (A) Fig.2 Active region safe operating area 20 15 10 7 5 T C = 25°C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate l C -V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 3 2 The data of fig.2 is based on T J(pk) = 200°C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. T J = 200°C Bonding wire limited 1 0.7 0.5 Thermal limitation (single pulse) Second breakdown limited curves apply below rated V CEO 0.3 0.2 2 5 3 7 10 20 30 50 70 100 150 200 V CE , Collector-emitter voltage (V) Fig.3 DC Current gain MJ15003(NPN) MJ15004(PNP) 500 200 100 70 50 V CE = 2.0V 200 T J = 25°C 30 20 10 7 5 0.2 0.3 0.5 1 2 5 7 10 100 70 50 20 V CE = 2.0V T J = 100°C T J = 100°C DC current gain, h FE DC current gain, h FE 300 300 T J = 25°C 20 10 7 5 0.2 0.3 0.5 l C , Collector current (Amp) 1 2 5 7 10 20 l C , Collector current (Amp) Fig.4 “ON” Characteristics MJ15004(PNP) 2.0 2.0 1.6 1.6 1.2 V BE @ V CE = 2V 0.8 T J = 100°C T J = 25°C T J = 25°C 0.4 T J = 100°C Voltage, V (Volts) Voltage, V (Volts) MJ15003(NPN) 1.2 0.8 T J = 100°C T J = 25°C 0.4 V CE(sat) @ l C /l B = 10 V BE @ V CE = 2V T J = 25°C T J = 100°C V CE(sat) @ l C /l B = 10 0 0.2 0.3 0.5 1 2 5 7 10 0 0.2 0.3 20 Collector current, l C (Amp) www.nellsemi.com 0.5 1 2 5 7 Collector current, l C (Amp) Page 3 of 4 10 20 MJ15003(NPN) RoHS MJ15004(PNP) RoHS SEMICONDUCTOR Nell High Power Products Fig.6 Transiton frequency (Current Gain-Bandwidth product) Fig.5 Capacitances 10 MJ15003(NPN) MJ15004(PNP) Capacitance, C (pF) 1000 C ib 500 C ob 200 100 50 20 0.1 T C = 25°C Transition frequency, f T (MHz) 2000 T J = 25°C V CE = 10V f test = 0.5MHz 9 8 MJ15004(PNP) 7 6 5 4 3 MJ15003(NPN) 2 1 0 0.2 0.5 10 20 50 100 0.1 Reverse voltage, V R (Volts) www.nellsemi.com 0.2 0.5 1.0 2.0 3.0 Collector current, l C (Amp) Page 4 of 4 5.0 10