KISEMICONDUCTOR ARS251 Button diodes voltage range 100 to 600 voltscurrent 25amp Datasheet

AR251/ARS251
THRU
AR256/ARS256
KI SEMICONDUCTOR
Features
BUTTON DIODES
Low leakage
Low forward voltage drop
High current capability
High forward surge current capability
VOLTAGE RANGE
100 TO 600 VOLTS
CURRENT 25AMPS
AR
.185(4.7)
.165(4.2)
ARS
.185(4.7)
.165(4.2)
Mechanical Data
Case: transfer molded plastic
Technology: vcauum soldered
Polarity: color ring denotes cathode
Lead: Plated lead, solderable per MIL-STD-202E method 208C
Mounting position: Any
Weigth: AR 1.80 grams, ARS 1.60 grams
.250(6.4)
.235(6.0)
.250(6.4)
.235(6.0)
.410(10.4)
DIA
.380( 9.7)
.346(8.8)
DIA
.327(8.2)
.225(5.7)
DIA
.215(5.5)
Maximum Ratings and Electrical Charactristics
.225(5.7)
DIA
.215(5.5)
Dimensions in inches and millimeters
Rating at 25oC ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameters
Symbols
Maximum repetitive peak reverse voltage
Maximum RM S voltage
Maximum DC blocking voltage
Maximum Average rectified forward current
at TC=110oC
Peak forward surge current 8.3mS single
half sine-wave superimposed on rated load
(JE DEC Method)
VRRM
VRMS
VDC
Rating for fusing(t<8.3ms)
Maximum instantaneous forward voltage
drop at 100A
Maximum DC reverse current TA=25oC
o
at rated DC blocking voltage TA=150 C
AR251
ARS251
100
70
100
AR252
ARS252
200
140
200
AR253
ARS253
300
210
300
AR254
ARS254
400
280
400
AR256
ARS256
600
420
600
Units
Volts
Volts
Volts
Io
25
Amps
IFSM
400
Amps
I2 t
664
A2S
VF
1.1
Volts
IR
5.0
uA
450
Typical thermal resistance
RθJC
1.0
Operating and storage temperature
TJ,TSTG
-65 to +175
o
C/W
o
C
Notes: 1.Enough heatsink must be considered in application.
KI SEMICONDUCTOR
AR251 THRU AR256
ARS251 THRU ARS256
Ratings and Characteristic Curves
KI SEMICONDUCTOR
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