HP ATF-10236-STR 0.5-12 ghz low noise gallium arsenide fet Datasheet

0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10236
Features
Description
• Low Noise Figure:
0.8␣ dB Typical at 4␣ GHz
The ATF-10236 is a high performance
gallium arsenide Schottky-barriergate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12␣ GHz frequency
range.
• Low Bias:
VDS = 2 V, IDS = 20␣ mA
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power: 20.0␣ dBm
Typical P1dB at 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-And-Reel Packaging
Option Available [1]
36 micro-X Package
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
Units
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
Min.
Typ. Max.
0.6
0.8
1.0
12.0
16.5
13.0
10.5
P1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dBm
20.0
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
12.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
mmho
80
140
mA
70
130
180
V
-3.0
-1.3
-0.8
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8697E
5-26
1.0
ATF-10236 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE > 25°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
175
Units
V
V
V
mA
mW
°C
°C
θjc = 350°C/W; TCH = 150°C
1µm Spot Size[5]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10236-TR1
ATF-10236-STR
1000
10
7"
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10236 Noise Parameters: VDS = 2 V, IDS = 25 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
0.5
1.0
2.0
4.0
6.0
8.0
0.45
0.5
0.6
0.8
1.0
1.3
0.93
0.87
0.73
0.45
0.42
0.49
18
36
74
148
-137
-80
RN/50
0.75
0.63
0.33
0.15
0.12
0.45
ATF-10236 Typical Performance, TA = 25°C
12
GA
10
9
6
1.0
0.5
0
2.0
NFO
NFO (dB)
1.5
6.0
8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
25
20
MSG
15
|S21|2
10
1.0
NFO
0.5
0
10
20
30
40
50
60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
5-27
MAG
5
0
4.0
GA (dB)
14
12
1.5
NFO (dB)
15
30
GAIN (dB)
2.0
16
GA (dB)
GA
18
0
0.5
1.0
2.0
4.0
6.0 8.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
Typical Scattering Parameters, Common Source, Z O = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
S11
Mag.
.97
.93
.77
.59
.48
.46
.53
.62
.71
.75
.78
.82
.84
Ang.
-20
-41
-81
-114
-148
166
125
96
73
54
39
26
12
dB
15.1
14.9
13.6
12.2
10.9
9.6
8.5
6.9
4.9
3.3
2.1
0.3
-0.5
S21
Mag.
5.68
5.58
4.76
4.06
3.51
3.03
2.65
2.22
1.75
1.47
1.28
1.04
0.95
Ang.
162
143
107
80
52
26
1
-20
-39
-55
-72
-86
-101
A model for this device is available in the DEVICE MODELS section.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
102
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
DRAIN
3
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-28
dB
-32.8
-26.0
-21.3
-18.4
-16.5
-15.3
-14.5
-14.4
-14.5
-14.7
-14.9
-14.9
-15.0
S12
Mag.
.023
.050
.086
.120
.149
.172
.189
.191
.189
.184
.180
.179
.177
S22
Ang.
76
71
51
35
18
3
-14
-28
-41
-46
-59
-71
-82
Mag.
.47
.45
.36
.30
.23
.10
.09
.24
.37
.46
.51
.54
.54
Ang.
-11
-23
-38
-51
-67
-67
48
55
51
42
34
26
17
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