FGA90N33ATD 330V, 90A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.1V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V IC Collector Current @ TC = 25oC 90 A IC pulse(1) Pulsed Collector Current @ TC = 25oC 220 A IC pulse(2) Pulsed Collector Current o @ TC = 25 C 330 A 25oC 223 W PD Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC 89 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds o 300 C C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.56 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.16 o C/W 40 o C/W RθJA Thermal Resistance, Junction to Ambient - Notes: (1) Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D<0.01, Pulse width<5usec *IC pluse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGA90N33ATD Rev. C0 1 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT August 2011 Device Marking Device Package Packaging Type FGA90N33ATD FGA90N33ATDTU TO-3P Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 330 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400μA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 400 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.5 4.0 5.5 V IC = 20A, VGE = 15V - 1.1 1.4 V IC = 45A, VGE = 15V, - 1.3 - V IC = 90A, VGE = 15V, - 1.6 - V IC = 90A, VGE = 15V, TC = 125oC - 1.7 - V - 2200 - pF - 135 - pF - 100 - pF - 23 - ns - 40 - ns - 100 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time - 180 240 ns td(on) Turn-On Delay Time - 20 - ns tr Rise Time - 40 - ns td(off) Turn-Off Delay Time - 110 - ns tf Fall Time - 250 300 ns Qg Total Gate Charge - 95 - nC Qge Gate to Emitter Charge - 12 - nC Qgc Gate to Collector Charge - 40 - nC FGA90N33ATD Rev. C0 VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge FGA90N33ATD Rev. C0 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.1 1.5 125oC - 0.96 - TC = 25oC - 23 - o TC = 125 C - 36 - TC = 25oC - 2.8 - o TC = 125 C - 5.1 - TC = 25oC - 32 - o - 91 - TC = 25 C IF = 10A TC = IF =10A, dI/dt = 200A/μs TC = 125 C 3 Units V ns A nC www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 160 o TC = 25 C 20V Figure 2. Typical Output Characteristics 160 10V o TC = 125 C 9V Collector Current, IC [A] Collector Current, IC [A] 12V 8V 80 7V 40 120 7V 80 40 VGE = 6V VGE = 6V 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 3. Typical Saturation Voltage Characteristics 0 Common Emitter VCE = 20V o o TC = 25 C 120 Collector Current, IC [A] Collector Current, IC [A] 5 160 Common Emitter VGE = 15V o TC = 125 C 80 40 0 1 2 3 Collector-Emitter Voltage, VCE [V] 80 40 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.8 90A 1.6 1.4 1.2 40A 1.0 IC = 20A 12 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 2.0 TC = 25 C 120 T = 125oC C 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 160 0 8V 15V 12V 10V 15V 120 9V 20V Common Emitter o TC = 25 C 16 12 8 90A 40A 4 IC = 20A 0.8 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGA90N33ATD Rev. C0 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Figure 8. Capacitance Characteristics 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz 16 Cies 3000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 40A 2000 Coes Cres 1000 4 o TC = 25 C 90A IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 0.1 20 Figure 9. Gate charge Characteristics 1 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 500 15 Common Emitter 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 10μs 100 o TC = 25 C 9 VCC = 100V 200V 6 3 0 30 100μs 1ms 10 10 ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 0.01 0 20 40 60 Gate Charge, Qg [nC] 80 100 Figure 11. Turn-on Characteristics vs. Gate Resistance 2. TJ = 150 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 200 100 1000 Switching Time [ns] tr Switching Time [ns] Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A td(off) tf 100 o TC = 25 C o TC = 125 C 10 0 FGA90N33ATD Rev. C0 20 40 60 80 Gate Resistance, RG [Ω] 10 100 5 0 20 40 60 80 Gate Resistance, RG [Ω] 100 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 400 Figure 14. Turn-off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C Common Emitter V GE = 15V, R G = 15 Ω o T C = 25 C tr 100 td(on) 10 0 20 40 60 tf Switching Time [ns] Switching Time [ns] o T C = 125 C 80 td(off) 100 100 100 0 20 Collector Current, IC [A] 40 60 80 Collector Current, IC [A] 100 Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics 400 200 100 Forward Current, IF [A] Collector Current, IC [A] 100 10 o TJ = 125 C 10 o TJ = 25 C 1 o TC = 25 C Safe Operating Area o 1 o VGE = 15V, TC = 125 C 1 10 100 0.1 0.0 600 Collector-Emitter Voltage, VCE [V] FGA90N33ATD Rev. C0 6 TC = 125 C 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 17. Reverse Recovery Current Figure 18. Stored Charge 60 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 4 200A/μs 3 2 di/dt = 100A/μs 1 0 5 10 20 30 Forward Current, IF [A] 45 200A/μs 30 di/dt = 100A/μs 15 0 40 5 10 20 30 40 Forward Current, IF [A] Figure 19. Reverse Recovery Current Reverse Recovery Time, trr [ns] 40 30 200A/μs di/dt = 100A/μs 20 10 5 10 20 30 40 Forward Current, IF [A] Figure 20.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 1E-5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA90N33ATD Rev. C0 7 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics FGA90N33ATD 330V, 90A PDP Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters FGA90N33ATD Rev. C0 8 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FGA90N33ATD Rev.C0 9 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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