FMBSA06 FMBSA06 NPN General Purpose Amplifier NC C1 • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 12. E B C pin #1 C SuperSOTTM-6 single Mark: .1G1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 80 Units V VCBO VEBO Collector-Base Voltage 80 V Emitter-Base Voltage 4.0 IC Collector Current V 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 1.0mA, IB = 0 80 V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 4.0 V ICEO Collector Cut-off Current VCE = 60V, IB = 0 0.1 µA ICBO Collector Cut-off Current VCB = 80V, IE = 0 0.1 µA V On Characteristics hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 1.0V 1.2 V 100 100 IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 2.0V, f = 100MHz 100 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation * Max. 700 Units mW RθJA Thermal Resistance, Junction to Ambient, total 180 °C/W * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA06 V CESAT - COLLECTOR EM ITTE R VOLTAGE (V) vs Collector Current 200 VCE = 1V 125 °C 150 25 °C 100 - 40 °C 50 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 0 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Voltage vs Collector Current Collector Current β = 10 β 1 - 40 °C 0.8 β 25 °C 125 °C 0.6 β 0.4 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 1 - 40 °C 0.8 125 °C 0.4 VCB = 80 V 1 VCE = 5V 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Figure 4. Base-Emitter On Voltage vs Collector Current V CE - COLLECTOR-EMITTER VOLTAGE (V) 10 25 °C 0.6 Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) β 0.4 Figure 1. Typical Pulsed Current Gain vs Collector Current V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector Saturation Region 2 T A = 25°C 1.5 0.1 0.01 1 IC = 1 mA 10 mA 100 mA 0.5 0.001 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 125 0 4000 10000 20000 30000 50000 I B - BASE CURRENT (uA) Figure 6. Collector Saturation Region Rev. A1, November 2004 Ω Ω (Continued) Between Emitter-Base 100 117 f = 1.0 MHz 116 CAPACITANCE (pF) BV CER - BREAKDOWN VOLTAGE (V) FMBSA06 Typical Characteristics 115 114 113 C ib 10 Cob 1 112 111 0.1 1 10 100 1000 RESISTANCE (k Ω) 0.1 0.1 1 10 100 V CE - COLLECTOR VOLTAGE (V) Ω f T - GAIN BANDWIDTH PRODUCT (MHz) Figure 7. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 8. Input and Output Capacitance vs Reverse Voltage vs Collector Current 400 V CE = 5V 350 300 250 200 150 100 1 10 20 50 100 I C - COLLECTOR CURRENT (mA) Figure 9. Gain Bandwidth Product vs Collector Current ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA06 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13