Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 70N15 IXFT 70N15 VDSS ID25 RDS(on) trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 70 A IDM TC = 25°C, pulse width limited by TJM 280 A IAR TC = 25°C 70 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD Maximum Ratings TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 (TAB) TO-268 (IXFT) Case Style G (TAB) 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C G = Gate S = Source D = Drain TAB = Drain 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 25 750 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 28 mW IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-247 AD (IXFH) S TJ TJM Tstg TL = 150 V = 70 A = 28 mW Features • • • • International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density 98583A (6/99) 1-2 IXFH 70N15 IXFT 70N15 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 45 S 3600 pF 1080 pF 360 pF TO-247 AD (IXFH) Outline 35 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 52 ns td(off) RG = 2 W (External) 70 ns 23 ns 180 nC 28 nC 92 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 70 A ISM Repetitive; 280 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr QRM IRM IF = 25A,-di/dt = 100 A/ms, VR = 25 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved 0.85 8 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2