HUR3060PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR3060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=140oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive Ptot TC=25oC Md mounting torque P1 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit 35 2 x 15 A 110 A 0.1 mJ 0.1 A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. typical o C 95 W 0.4...0.6 Nm 6 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR3060PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.35 2.04 V RthJC RthCH 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC trr VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 35 o IRM 1.6 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 4.9 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR3060PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 40 2000 A 30 IF 1500 TVJ= 25°C 20 IRM 1000 10 1 VF 2 IF= 30A IF= 15A IF= 7.5A Fig. 1 Forward current IF versus VF A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 120 trr Kf IRM 0.0 IF= 30A IF= 15A IF= 7.5A 40 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.6 VFR u ıs 1.2 tfr 10 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.8 5 70 0 200 400 600 800 1000 A/us -diF/dt Fig. 5 Recovery time trr versus -diF/dt 10 0 0.4 0 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 ZthJC 1 2 3 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 tfr 90 80 0 200 VFR 15 Qr 0.5 0 TVJ= 100°C V IF = 15A 110 100 1.0 0 20 TVJ= 100°C VR = 300V ns 1.5 IF= 30A IF= 15A IF= 7.5A 10 0 100 V 30 20 500 0 TVJ= 100°C VR = 300V A Qr TVJ=150°C TVJ=100°C 0 40 TVJ= 100°C nC VR = 300V ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com