Sirectifier HUR3060PT Soft recovery behaviour high-performance ultra fast recovery epitaxial diode Datasheet

HUR3060PT
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
A
C
A
Dimensions TO-247AD
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
600
HUR3060PT
Symbol
VRRM
V
600
Test Conditions
IFRMS
IFAVM
TC=140oC; rectangular, d=0.5
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=1A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
Ptot
TC=25oC
Md
mounting torque
P1
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Maximum Ratings
Unit
35
2 x 15
A
110
A
0.1
mJ
0.1
A
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Weight
Dim.
typical
o
C
95
W
0.4...0.6
Nm
6
g
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR3060PT
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
1.35
2.04
V
RthJC
RthCH
0.5
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
trr
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
K/W
35
o
IRM
1.6
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ns
4.9
ADVANTAGES
A
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR3060PT
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
40
2000
A
30
IF
1500
TVJ= 25°C
20
IRM
1000
10
1
VF
2
IF= 30A
IF= 15A
IF= 7.5A
Fig. 1 Forward current IF versus VF
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
120
trr
Kf
IRM
0.0
IF= 30A
IF= 15A
IF= 7.5A
40
400
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.6
VFR
u
ıs
1.2
tfr
10
80
120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
0.8
5
70
0
200
400
600
800 1000
A/us
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
10
0
0.4
0
200
400
0.0
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
ZthJC
1
2
3
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.0052
0.0003
0.017
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
P3
tfr
90
80
0
200
VFR
15
Qr
0.5
0
TVJ= 100°C
V IF = 15A
110
100
1.0
0
20
TVJ= 100°C
VR = 300V
ns
1.5
IF= 30A
IF= 15A
IF= 7.5A
10
0
100
V
30
20
500
0
TVJ= 100°C
VR = 300V
A
Qr
TVJ=150°C
TVJ=100°C
0
40
TVJ= 100°C
nC VR = 300V
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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