Diodes LMN200B02 200 ma load switch featuring pre-biased pnp transistor and n-mosfet Datasheet

LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
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General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable VCE(SAT) which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
6
5
4
1
2
3
Features
•
•
•
•
•
•
Fig. 1: SOT-363
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
C_Q1
B_Q1
S_Q2
6
5
4
Q1
Mechanical Data
•
•
•
•
•
•
•
•
PNP
C
DDTB142JU_DIE
R2
B
R3
470
37K
E
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.006 grams (approximate)
Sub-Component P/N
R1
S
G
10K
Q2
NMOS
DSNM6047_DIE D
1
2
3
E_Q1
G_Q2
D_Q2
Fig. 2 Schematic and Pin Configuration
Reference
Device Type
R1 (NOM)
R2 (NOM)
R3 (NOM)
Figure
DDTB142JU_DIE
Q1
PNP Transistor
10K
470
⎯
2
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Q2
N-MOSFET
⎯
⎯
37K
2
Maximum Ratings, Total Device
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
PD
200
mW
Power Derating Factor above 125°C
Pder
1.6
mW/°C
Output Current
Iout
200
mA
Symbol
Value
Unit
TJ,TSTG
-55 to +150
°C
RθJA
625
°C/W
Power Dissipation (Note 3)
Thermal Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
Notes:
Unit
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30658 Rev. 7 - 2
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LMN200B02
© Diodes Incorporated
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Supply Voltage
VCC
-50
V
Input Voltage
Vin
+5 to -6
V
Output Current
IC
-200
mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2)
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS ≤1M Ohm)
VDGR
60
V
Gate-Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
DS30658 Rev. 7 - 2
Continuous
Pulsed (tp<50 uS)
Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
VGSS
ID
IS
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+/-20
+/-40
115
800
115
V
mA
mA
LMN200B02
© Diodes Incorporated
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Cut Off Current
ICBO
⎯
⎯
-100
nA
Collector-Emitter Cut Off Current
ICEO
⎯
⎯
-500
nA
VCE = -50V, IB = 0
Emitter-Base Cut Off Current
IEBO
⎯
-0.5
-1
mA
VEB = -5V, IC = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-50
⎯
⎯
V
IC = -10 uA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50
⎯
⎯
V
IC = -2 mA, IB = 0
VI(OFF)
⎯
-0.55
-0.3
V
VCE = -5V, IC = -100uA
VOH
-4.9
⎯
⎯
V
VCC = -5V, VB = -0.05V,
RL = 1K
IO(OFF)
⎯
⎯
-500
nA
VCC = -50V, VI = 0V
⎯
⎯
-0.15
V
IC = -10 mA, IB = -0.5 mA
⎯
⎯
-0.2
V
IC = -50mA, IB = -5mA
⎯
⎯
-0.2
V
IC = -20mA, IB = -1mA
⎯
⎯
-0.25
V
IC = -100mA, IB= -10mA
⎯
⎯
-0.25
V
IC = -200mA, IB= -10mA
⎯
⎯
-0.3
V
IC = -200mA, IB = -20mA
OFF CHARACTERISTICS
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as ICEO)
VCB = -50V, IE = 0
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Equivalent On-Resistance*
VCE(SAT)
RCE(SAT)
DC Current Gain
hFE
Input On Voltage
VI(ON)
Output Voltage (equivalent to VCE(SAT) or VO(ON) )
VOL
⎯
⎯
1.5
Ω
IC = -200mA, IB = -10mA
60
150
⎯
⎯
VCE = -5V, IC = -20 mA
60
215
⎯
⎯
VCE = -5V, IC = -50 mA
60
245
⎯
⎯
VCE = -5V, IC = -100 mA
60
250
⎯
⎯
VCE = -5V, IC = -200 mA
-2.45
-0.7
⎯
V
VO = -0.3V, IC = -2 mA
-0.15
V
VCC = -5V, VB = -2.5V,
Io/II = -50mA /-2.5mA
⎯
-0.065
Ii
⎯
-9
-28
mA
Base-Emitter Turn-on Voltage
VBE(ON)
⎯
-1.13
-1.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
Input Current
⎯
-3.2
-3.6
⎯
-4.6
-5.5
V
VI = -5V
VCE = -5V, IC = 200mA
IC = -50mA, IB = -5mA
IC = -80mA, IB = -8mA
Input Resistor (Base), +/- 30%
R2
⎯
0.47
⎯
KΩ
⎯
Pull-up Resistor (Base to Vcc supply), +/- 30%
R1
⎯
10
⎯
KΩ
⎯
R1/R2
⎯
21
⎯
⎯
⎯
Transition Frequency (Gain Bandwidth Product)
fT
⎯
200
⎯
MHz
Collector Capacitance, (Ccbo-Output Capacitance)
CC
⎯
20
⎯
pF
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
SMALL SIGNAL CHARACTERISTICS
VCE = -10V, IE = -5mA,
f = 100MHz
VCB = -10V, IE = 0A,
f = 1MHz
* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02
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LMN200B02
© Diodes Incorporated
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage, BVDSS
Test Condition
V(BR)DSS
60
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current (Drain Leakage
Current)
IDSS
⎯
⎯
1
μA
VGS =0V, VDS = 60V
Gate-Body Leakage Current, Forward
IGSSF
⎯
⎯
0.95
mA
VGS = 20V, VDS = 0V
Gate-Body Leakage Current, Reverse
IGSSR
⎯
⎯
-0.95
mA
VGS = -20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
VGS(th)
1
1.9
2.2
V
Static Drain-Source On-State Voltage
VDS(on)
⎯
0.10
1.5
⎯
0.15
3.75
On-State Drain Current
Static Drain-Source On-Resistance
RDS(on)
Forward Transconductance
gFS
Gate Pull-Down Resistor, +/- 30%
R3
⎯
500
ID(on)
⎯
⎯
1.6
3
⎯
1.4
2
80
240
⎯
80
350
⎯
⎯
37
⎯
V
mA
Ω
mS
KΩ
VDS = VGS, ID = 0.25mA
VGS = 5V, ID = 50mA
VGS = 10V, ID = 115mA
VGS = 10V,
VDS ≥2XVDS(ON)
VGS = 5V, ID = 50mA
VGS = 10V, ID = 500mA
VDS ≥2XVDS(ON), ID = 115 mA
VDS ≥2XVDS(ON), ID = 200 mA
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
50
pF
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
5
pF
Turn-On Delay Time
tD(on)
⎯
⎯
20
ns
Turn-Off Delay Time
tD(off)
⎯
⎯
40
ns
VDS = -25V, VGS = 0V,
f = 1MHz
SWITCHING CHARACTERISTICS
VDD = 30V, VGS =10V,
ID = 200mA,
RG = 25 Ohm, RL = 150 Ohm
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
Notes:
VSD
⎯
0.90
1.5
V
IS
⎯
⎯
115
mA
⎯
ISM
⎯
⎯
800
mA
⎯
VGS = 0V, IS = 115 mA
4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
350
PD, POWER DISSIPATION (mW)
300
250
200
150
100
(Note 3)
50
0
0
DS30658 Rev. 7 - 2
25
50
150
75
100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs.
Ambient Temperature (Total Device)
175
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LMN200B02
© Diodes Incorporated
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE (V)
Typical Pre-Biased PNP Transistor (Q1) Characteristics
IC, COLLECTOR CURRENT (A)
Fig. 4 VCE(SAT) vs. IC
VBE(ON), BASE EMITTER VOLTAGE (V)
VBE(SAT), BASE EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Fig. 5 VCE(SAT) vs. IC
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 VBE(SAT) vs. IC
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 VBE(ON) vs. IC
hFE, DC CURRENT GAIN
1
IC, COLLECTOR CURRENT (mA)
Fig. 8 hFE vs. IC
DS30658 Rev. 7 - 2
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LMN200B02
© Diodes Incorporated
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Typical N-Channel MOSFET (Q2) Characteristics
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
2.2
5
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
2.0
1.8
1.6
1.4
1.2
4
3
2
1
0
0
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Voltage
vs. Junction Temperature
ID, DRAIN CURRENT (A)
Fig. 12 Static Drain-Source On-Resistance
vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
4
0
1
ID, DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
DS30658 Rev. 7 - 2
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VGS, GATE SOURCE VOLTAGE (V)
Fig. 14 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
LMN200B02
© Diodes Incorporated
IS, REVERSE DRAIN CURRENT (A)
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
IS, REVERSE DRAIN CURRENT (A)
gFS, FORWARD TRANSCONDUCTANCE (mS)
Tj, JUNCTION TEMPERATURE (° C)
Fig. 15 Static Drain-Source On-State Resistance
vs. Junction Temperature
0.5
DS30658 Rev. 7 - 2
1
1.5
2
2.5
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LMN200B02
© Diodes Incorporated
Application Details
PNP Transistor (DDTB142JU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN200B02 can be used as a discrete
entity for general purpose applications or as an
integrated circuit to function as a Load Switch. When
it is used as the latter as shown in Fig 19, various
input voltage sources can be used as long as it does
not exceed the maximum ratings of the device.
These devices are designed to deliver continuous
output load current up to a maximum of 200 mA. The
MOSFET Switch draws no current, hence loading of
control circuit is prevented. Care must be taken for
higher levels of dissipation while designing for higher
load conditions. These devices provide high power
and also consume less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 20
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of a
power management system)
DDTB142JU
Vin
Vout
C
E
Q1
PNP
B
R1
LOAD
10K
R2
470
DSNM6047
D
Q2
S
NMOS
G
Control
R3
37K
Fig. 19 Circuit Diagram
Typical Application Circuit
5v Supply
U1
U2
Load Switch
Vin
U3
Vin
Control Logic
Circuit (PIC,
Comparator
etc)
OUT1
1
Control 2
3
GND
E_Q1
C_Q1
G_Q2
B_Q1
D_Q2
S_Q2
Point of
Load
6 Vout
IN
OUT
5
4 Gnd
Voltage Regulator
LNM200B02
Diodes Inc.
Fig. 20
Ordering Information
Notes:
5.
(Note 5)
Device
Packaging
Shipping
LMN200B02-7
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
DS30658 Rev. 7 - 2
2007
U
Feb
2
2008
V
Mar
3
YM
PM2
PM2 = Product Type Marking Code,
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
2009
W
Apr
4
2010
X
May
5
Jun
6
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2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
LMN200B02
© Diodes Incorporated
Mechanical Details
A
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
F
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
DS30658 Rev. 7 - 2
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LMN200B02
© Diodes Incorporated
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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DS30658 Rev. 7 - 2
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LMN200B02
© Diodes Incorporated