Yea Shin ER2J Surface mount superfast rectifi er voltage - 50 to 600 volts current - 2.0 ampere Datasheet

DATA SHEET
ER2A~ER2J
SEMICONDUCTOR
SURFACE MOUNT SUPERFAST RECTIFI ER
VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere
FEATURES
• For surface mounted applications
SMB/DO-214AA
• Low profile package
• Built-in strain relief
Unit:inch(mm)
.083(2.11)
.075(1.91)
• Easy pick and place
• Superfast recovery times for high efficiency
.155(3.94)
.130(3.30)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
.185(4.70)
.160(4.06)
• High temperature soldering:
.012(.305)
.006(.152)
260 OC / 10 seconds at terminals
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
.096(2.44)
.083(2.13)
environment substance directive request
.012(.31)
.006(.15)
MECHANICAL DATA
• Case: JEDEC DO-214AA molded plastic
.050(1.27)
.030(0.76)
• Terminals: Solder plated, solderable per
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C J ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
ER2A
ER2B
ER2C
ER2D
ER2E
ER2G
ER2J
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
VDC
50
100
150
200
300
400
600
Volts
Maximum DC Blo cking Voltage
Maximum Average Forward Rectif ied Current ,
at TL=110 OC
Peak Forward Surge Current 8.3ms single half
si newave superi mposed on rated load(JEDEC method)
Maximum Instantaneous Forward Vol tage at 2.0A
I(AV)
2.0
Amps
IFSM
50.0
Amps
VF
Maxi mum DC Reverse Cur rent T A=25 °C
At Rated DC Blocking Voltage TA=100°C
0.95
1.25
5.0
IR
Maximum Reverse Recovery Time (Note 1)
UNITS
100
1.7
Volts
uA
TRR
35.0
Typi cal Junction capacitance (Note 2)
CJ
25.0
pF
Typical Thermal Resistance (Note 3 )
RθJA
20.0
°C /W
TJ,TSTG
-55 to +150
°C
Operating and Storage Temperature Range
nS
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
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REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
ER2A~ER2J
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
trr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
1cm
2.4
2.0
SINGLE PHASE HALF
WAVE 60Hz RESISTIVE
OR INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.3×0.3"(8.0×8.0mm)
COPPER PAD AREAS
1.6
1.2
0.8
0.4
0
0
20
1,000
10
TJ = 75 °C
T J = 25°C
1
0.1
20
40
60
80
100
120
120
140
160
ER2A
10.0
ER2E
1.0
ER2J
0.1
TJ = 25 °C
PULSE WIDTH = 300 nS
2% DUTY CYCLE
140
0.01
0.4
PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS
0.5
0.8
1.0
1.2
1.4
1.6 1.8
REVERSE VOLTAGE, VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
60
60
50
CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT,
AMPERES
100
50.0
0.01
0
80
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
INSTANTANEOUS FORWARD CURRENT
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
T J = 100 °C
60
LEAD TEMPERATURE,°C
50 ns/cm
100
40
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
40
30
20
10
50
40
30
TJ = 25 °C
20
f = 1.0MHz
Vsig = 50mVp-p
10
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
.5
1
2
5
10
20
50
100 200
500 1000
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
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2
Fig. 6-TYPICAL JUNCTION CAPACITANCE
REV.02 20110725
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