DATA SHEET ER2A~ER2J SEMICONDUCTOR SURFACE MOUNT SUPERFAST RECTIFI ER VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere FEATURES • For surface mounted applications SMB/DO-214AA • Low profile package • Built-in strain relief Unit:inch(mm) .083(2.11) .075(1.91) • Easy pick and place • Superfast recovery times for high efficiency .155(3.94) .130(3.30) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction .185(4.70) .160(4.06) • High temperature soldering: .012(.305) .006(.152) 260 OC / 10 seconds at terminals • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS .096(2.44) .083(2.13) environment substance directive request .012(.31) .006(.15) MECHANICAL DATA • Case: JEDEC DO-214AA molded plastic .050(1.27) .030(0.76) • Terminals: Solder plated, solderable per .008(.203) .002(.051) .220(5.59) .200(5.08) MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 12mm tape (EIA-481) • Weight: 0.003 ounce, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C J ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS ER2A ER2B ER2C ER2D ER2E ER2G ER2J Maximum Recurrent Peak Reverse V oltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts VDC 50 100 150 200 300 400 600 Volts Maximum DC Blo cking Voltage Maximum Average Forward Rectif ied Current , at TL=110 OC Peak Forward Surge Current 8.3ms single half si newave superi mposed on rated load(JEDEC method) Maximum Instantaneous Forward Vol tage at 2.0A I(AV) 2.0 Amps IFSM 50.0 Amps VF Maxi mum DC Reverse Cur rent T A=25 °C At Rated DC Blocking Voltage TA=100°C 0.95 1.25 5.0 IR Maximum Reverse Recovery Time (Note 1) UNITS 100 1.7 Volts uA TRR 35.0 Typi cal Junction capacitance (Note 2) CJ 25.0 pF Typical Thermal Resistance (Note 3 ) RθJA 20.0 °C /W TJ,TSTG -55 to +150 °C Operating and Storage Temperature Range nS NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES ER2A~ER2J AVERAGE FORWARD RECTIFIED CURRENT, AMPERES trr +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 1cm 2.4 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.3×0.3"(8.0×8.0mm) COPPER PAD AREAS 1.6 1.2 0.8 0.4 0 0 20 1,000 10 TJ = 75 °C T J = 25°C 1 0.1 20 40 60 80 100 120 120 140 160 ER2A 10.0 ER2E 1.0 ER2J 0.1 TJ = 25 °C PULSE WIDTH = 300 nS 2% DUTY CYCLE 140 0.01 0.4 PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS 0.5 0.8 1.0 1.2 1.4 1.6 1.8 REVERSE VOLTAGE, VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 60 60 50 CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES 100 50.0 0.01 0 80 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM T J = 100 °C 60 LEAD TEMPERATURE,°C 50 ns/cm 100 40 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 40 30 20 10 50 40 30 TJ = 25 °C 20 f = 1.0MHz Vsig = 50mVp-p 10 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz .5 1 2 5 10 20 50 100 200 500 1000 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT http://www.yeashin.com .1 2 Fig. 6-TYPICAL JUNCTION CAPACITANCE REV.02 20110725