ON NTGS3136P Power mosfet Datasheet

NTGS3136P, NVGS3136P
Power MOSFET
−20 V, −5.8 A, Single P−Channel, TSOP−6
Features
•
•
•
•
•
Low RDS(on) in TSOP−6 Package
1.8 V Gate Rating
Fast Switching
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
−20 V
RDS(ON) TYP
ID MAX
25 mW @ −4.5 V
−5.1 A
32 mW @ −2.5 V
−4.5 A
41 mW @ −1.8 V
−2.5 A
Applications
P−Channel
• Optimized for Battery and Load Management Applications in
•
•
1 2 5 6
Portable Equipment
High Side Load Switch
Switching Circuits for Game Consoles, Camera Phone, etc.
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDSS
−20
V
Gate−to−Source Voltage
VGS
$8.0
V
ID
−5.1
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−3.6
tv5s
TA = 25°C
−5.8
Steady
State
PD
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
1
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
−3.7
A
−2.7
February, 2015 − Rev. 2
XXX
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PD
0.7
W
PIN ASSIGNMENT
IDM
−20
A
Drain Drain Source
6 5 4
TJ,
TSTG
−55 to
150
°C
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0775 in sq).
© Semiconductor Components Industries, LLC, 2015
XXX MG
G
1
W
ID
TSOP−6
CASE 318G
STYLE 1
1.25
1.6
TA = 25°C
MARKING
DIAGRAM
A
TA = 25°C
tv5s
4
1
1
2
3
Drain Drain Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTGS3136P/D
NTGS3136P, NVGS3136P
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
100
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
77
Junction−to−Ambient – Steady State (Note 4)
RqJA
185
Unit
°C/W
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ID = −250 mA, Reference 25°C
IDSS
VGS = 0 V,
VDS = −20 V
V
−13
mV/°C
TJ = 25°C
−1.0
TJ = 85°C
−5.0
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
$0.1
mA
−1.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
−0.4
3
RDS(on)
gFS
mV/°C
VGS = −4.5 V, ID = −5.1 A
25
33
VGS = −2.5 V, ID = −4.5 A
32
40
VGS = −1.8 V, ID = −2.5 A
41
51
VDS = −5.0 V, ID = −5.1 A
22
S
1901
pF
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1 MHz, VDS = −10 V
274
175
Total Gate Charge
QG(TOT)
18
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.3
RG
7.6
td(ON)
9
19
Tr
9
19
99
160
48
79
TJ = 25°C
−0.7
−1.2
V
TJ = 125°C
−0.6
60
ns
Gate Resistance
VGS = −4.5 V, VDS = −10 V;
ID = −5.1 A
29
nC
2.4
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
td(OFF)
Tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.7 A
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −1.7 A
37
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTGS3136P, NVGS3136P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
20
−ID, DRAIN CURRENT (A)
−2.5 V
12
−1.5 V
8.0
4.0
15
10
TJ = 25°C
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.25
1.5
1.75
2
2.25 2.5
Figure 2. Transfer Characteristics
0.10
0.08
0.06
0.04
TJ = 125°C
0.02
TJ = 25°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
5.0
0.10
0.08
C, CAPACITANCE (pF)
ID = −4.5 A
VGS = −5.1 V
1.2
1.1
1.0
0.9
0.8
−25
0
25
50
75
100
125
−1.8 V
0.07
0.06
0.05
−2 V
0.04
0.03
−2.5 V
0.02
VGS = −4.5 V
0.01
0
0
4.0
8.0
12
16
20
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.5
1.3
TJ = 25°C
0.09
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1
Figure 1. On−Region Characteristics
0.12
0.7
−50
0.75
−VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = −5.1 A
0
1.0
0.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.14
1.4
TJ = −55°C
TJ = 125°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = −5 V
−1.8 V
−2 V
16
TJ = 25°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
VGS = −4.5 V
150
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
0
2
4
6
8
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
10
12
NTGS3136P, NVGS3136P
12
QT
10
−VDS
4
8
3
−VGS
6
2 QGS
QGD
4
VDS = −10 V
ID = −5.1 A
TJ = 25°C
1
0
0
2
4
6
8
10
12
14
16
2
0
18
30
VGS = 0 V
−IS, SOURCE CURRENT (A)
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
TJ = 150°C
TJ = 25°C
1.0
0
0.2
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.2
Figure 8. Diode Forward Voltage vs. Current
0.8
80
ID = −250 mA
70
0.7
60
POWER (W)
−VGS(th) (V)
0.6
0.5
0.4
50
40
30
20
0.3
0.2
−50
10
0
−25
0
25
50
75
100
125
150
1E−2
1E−1
1
1E+1
1E+2
TJ, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
100
−ID, DRAIN CURRENT (A)
1E−3
100 ms
10
1 ms
1
VGS = −8.0 V
SINGLE PULSE
0.1 TC = 25°C
RDS(on) LIMIT
Thermal Limit
Package Limit
0.01
0.1
1
10 ms
dc
10
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
1E−04 1E−03 1E−02 1E−01
1
1E+01 1E+02 1E+03
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. FET Thermal Response
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4
1E+3
NTGS3136P, NVGS3136P
ORDERING INFORMATION
Marking
Package
Shipping†
NTGS3136PT1G
SD
NVGS3136PT1G*
VSD
TSOP−6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
NTGS3136P, NVGS3136P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
D
H
ÉÉ
ÉÉ
6
E1
1
NOTE 5
5
2
4
L2
GAUGE
PLANE
E
3
L
M
b
SEATING
PLANE
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
DETAIL Z
e
0.05
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
c
A
A1
DETAIL Z
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
3.20
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTGS3136P/D