Kexin BAT18-05 Silicon rf switching diode Datasheet

Diodes
SMD Type
Silicon RF Switching Diode
BAT18;BAT18-04
BAT18-05;BAT18-06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
Features
Low-loss VHF/UHF switch above 10 MHz
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Pin diode with low forward resistance
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
Value
Unit
VR
35
V
IF
100
mA
T op, T stg
-55 to +150
Forward Current
Operating and storage temperature range
Junction - ambient
R th JA
K/W
450
Electrical C haracteristics Ta = 25
Sym bol
Conditions
Forward voltage
Param eter
VF
I F = 100 m A
M in
Reverse current
IR
Typ
M ax
Unit
0.38
1.2
V
V R = 20 V
20
V R = 20 V, T A = 60
CT
V R = 20 V, f = 1 M Hz
0.75
1
Forward resistance
rf
I F = 5 m A, f = 100 M Hz
0.4
0.7
Series inductance
Ls
Diode capacitance
nA
200
2
pF
nH
Marking
Type
BAT18
BAT18-04
BAT18-05
BAT18-06
Marking
A2
AU
AS
AT
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