MC74HC4060A 14−Stage Binary Ripple Counter With Oscillator High−Performance Silicon−Gate CMOS The MC74HC4060A is identical in pinout to the standard CMOS MC14060B. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. This device consists of 14 master−slave flip−flops and an oscillator with a frequency that is controlled either by a crystal or by an RC circuit connected externally. The output of each flip−flop feeds the next and the frequency at each output is half of that of the preceding one. The state of the counter advances on the negative−going edge of the Osc In. The active−high Reset is asynchronous and disables the oscillator to allow very low power consumption during stand−by operation. State changes of the Q outputs do not occur simultaneously because of internal ripple delays. Therefore, decoded output signals are subject to decoding spikes and may have to be gated with Osc Out 2 of the HC4060A. http://onsemi.com MARKING DIAGRAMS 16 PDIP−16 N SUFFIX CASE 648 16 1 MC74HC4060AN AWLYYWW 1 16 SOIC−16 D SUFFIX CASE 751B 16 1 HC4060AG AWLYWW 1 Features • • • • • • • • 16 Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1 mA High Noise Immunity Characteristic of CMOS Devices In Compliance With JEDEC Standard No. 7A Requirements Chip Complexity: 390 FETs or 97.5 Equivalent Gates Pb−Free Packages are Available* 16 1 TSSOP−16 DT SUFFIX CASE 948F HC40 60A ALYWG G 1 16 16 1 SOEIAJ−16 F SUFFIX CASE 966 74HC4060A ALYWG 1 A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G = Pb−Free Package G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: MC74HC4060A/D MC74HC4060A FUNCTION TABLE Clock Reset Output State X L L H No Change Advance to Next State All Outputs Are Low LOGIC DIAGRAM Osc Out 1 Osc Out 2 10 Osc In Reset 9 7 5 4 6 14 13 15 1 2 3 11 12 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q12 Q13 Q14 Pinout: 16−Lead Plastic Package (Top View) VCC Q10 Q8 Q9 16 15 14 13 Osc Osc Reset Osc In Out 1 Out 2 12 11 10 9 8 GND Pin 16 = VCC Pin 8 = GND 1 2 3 4 5 6 7 Q12 Q13 Q14 Q6 Q5 Q7 Q4 ORDERING INFORMATION Package Shipping† MC74HC4060AN PDIP−16 500 Units / Box MC74HC4060ANG PDIP−16 (Pb−Free) 500 Units / Box MC74HC4060AD SOIC−16 48 Units / Rail MC74HC4060ADG SOIC−16 (Pb−Free) 48 Units / Rail MC74HC4060ADR2 SOIC−16 2500 Units / Reel MC74HC4060ADR2G SOIC−16 (Pb−Free) 2500 Units / Reel MC74HC4060ADT TSSOP−16* 96 Units / Rail MC74HC4060ADTG TSSOP−16* 96 Units / Rail MC74HC4060ADTR2 TSSOP−16* 2500 Units / Reel MC74HC4060ADTR2G TSSOP−16* 2500 Units / Reel MC74HC4060AFEL SOEIAJ−16 2000 Units / Reel MC74HC4060AFELG SOEIAJ−16 (Pb−Free) 2000 Units / Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 MC74HC4060A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit – 0.5 to + 7.0 V DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V VCC DC Supply Voltage (Referenced to GND) Vin Vout Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 750 500 450 mW Tstg Storage Temperature Range – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package Plastic DIP† SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. _C 260 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min DC Supply Voltage (Referenced to GND) Max Unit 2.5* 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature Range, All Package Types tr, tf Input Rise/Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V *The oscillator is guaranteed to function at 2.5 V minimum. However, parametrics are tested at 2.0 V by driving Pin 11 with an external clock source. DC CHARACTERISTICS (Voltages Referenced to GND) VCC V Guaranteed Limit −55 to 25°C ≤85°C ≤125°C Unit VIH Minimum High−Level Input Voltage Vout = 0.1V or VCC −0.1V |Iout| ≤ 20mA 2.0 3.0 4.5 6.0 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 V VIL Maximum Low−Level Input Voltage Vout = 0.1V or VCC − 0.1V |Iout| ≤ 20mA 2.0 3.0 4.5 6.0 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 V VOH Minimum High−Level Output Voltage (Q4−Q10, Q12−Q14) Vin = VIH or VIL |Iout| ≤ 20mA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.20 3.70 5.20 Symbol Parameter Condition |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA Vin =VIH or VIL http://onsemi.com 3 MC74HC4060A DC CHARACTERISTICS (Voltages Referenced to GND) Symbol Parameter Condition VOL Maximum Low−Level Output Voltage (Q4−Q10, Q12−Q14) Vin = VIH or VIL |Iout| ≤ 20mA |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA Vin = VIH or VIL VOH Minimum High−Level Output Voltage (Osc Out 1, Osc Out 2) Vin = VCC or GND |Iout| ≤ 20mA |Iout| ≤ 0.7mA |Iout| ≤ 1.0mA |Iout| ≤ 1.3mA Vin =VCC or GND VOL Maximum Low−Level Output Voltage (Osc Out 1, Osc Out 2) Vin = VCC or GND |Iout| ≤ 20mA |Iout| ≤ 0.7mA |Iout| ≤ 1.0mA |Iout| ≤ 1.3mA Vin =VCC or GND Guaranteed Limit VCC V −55 to 25°C ≤85°C ≤125°C Unit 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.20 3.70 5.20 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 V V Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0mA 6.0 4 40 160 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) VCC V Guaranteed Limit −55 to 25°C ≤85°C ≤125°C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 2.0 3.0 4.5 6.0 6.0 10 30 50 9.0 14 28 45 8.0 12 25 40 MHz tPLH, tPHL Maximum Propagation Delay, Osc In to Q4* (Figures 1 and 4) 2.0 3.0 4.5 6.0 300 180 60 51 375 200 75 64 450 250 90 75 ns tPLH, tPHL Maximum Propagation Delay, Osc In to Q14* (Figures 1 and 4) 2.0 3.0 4.5 6.0 500 350 250 200 750 450 275 220 1000 600 300 250 ns tPHL Maximum Propagation Delay, Reset to Any Q (Figures 2 and 4) 2.0 3.0 4.5 6.0 195 75 39 33 245 100 49 42 300 125 61 53 ns tPLH, tPHL Maximum Propagation Delay, Qn to Qn+1 (Figures 3 and 4) 2.0 3.0 4.5 6.0 75 60 15 13 95 75 19 16 125 95 24 20 ns Symbol Parameter http://onsemi.com 4 MC74HC4060A AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) − continued Symbol tTLH, tTHL Cin Parameter Maximum Output Transition Time, Any Output (Figures 1 and 4) Guaranteed Limit VCC V −55 to 25°C ≤85°C ≤125°C Unit 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns 10 10 10 pF Maximum Input Capacitance NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). * For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations: VCC = 4.5 V: tP = [30.25 + 14.6 (n−1)] ns VCC = 2.0 V: tP = [93.7 + 59.3 (n−1)] ns VCC = 3.0 V: tP = [61.5+ 34.4 (n−1)] ns VCC = 6.0 V: tP = [24.4 + 12 (n−1)] ns Typical @ 25°C, VCC = 5.0 V CPD 35 Power Dissipation Capacitance (Per Package)* * Used to determine the no−load dynamic power consumption: PD = CPD VCC ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2f pF + ICC VCC . For load considerations, see Chapter 2 of the TIMING REQUIREMENTS (Input tr = tf = 6 ns) VCC V Guaranteed Limit −55 to 25°C ≤85°C ≤125°C Unit trec Minimum Recovery Time, Reset Inactive to Clock (Figure 2) 2.0 3.0 4.5 6.0 100 75 20 17 125 100 25 21 150 120 30 25 ns tw Minimum Pulse Width, Clock (Figure 1) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 23 19 ns tw Minimum Pulse Width, Reset (Figure 2) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 23 19 ns Maximum Input Rise and Fall Times (Figure 1) 2.0 3.0 4.5 6.0 1000 800 500 400 1000 800 500 400 1000 800 500 400 ns Symbol tr, tf Parameter NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). http://onsemi.com 5 MC74HC4060A PIN DESCRIPTIONS INPUTS Osc In (Pin 11) Osc Out 1, Osc Out 2 (Pins 9, 10) Oscillator outputs. These pins are used in conjunction with Osc In and the external components to form an oscillator. When Osc In is being driven with an external clock source, Osc Out 1 and Osc Out 2 must be left open circuited. With the crystal oscillator configuration in Figure 6, Osc Out 2 must be left open circuited. Negative−edge triggering clock input. A high−to−low transition on this input advances the state of the counter. Osc In may be driven by an external clock source. Reset (Pin 12) Active−high reset. A high level applied to this input asynchronously resets the counter to its zero state (forcing all Q outputs low) and disables the oscillator. OUTPUTS Q4—Q10, Q12−Q14 (Pins 7, 5, 4, 6, 13, 15, 1, 2, 3) Active−high outputs. Each Qn output divides the Clock input frequency by 2N. The user should note the Q1, Q2, Q3 and Q11 are not available as outputs. SWITCHING WAVEFORMS tf tw tr 90% 50% 10% Osc In VCC 50% GND tPHL GND tw 1/fMAX tPLH Q Reset VCC Q tPHL 90% 50% 10% 50% trec tTLH Osc In tTHL GND Figure 1. Figure 2. TEST POINT VCC Qn OUTPUT 50% DEVICE UNDER TEST GND tPLH Qn+1 VCC 50% tPHL CL* 50% *Includes all probe and jig capacitance Figure 3. Figure 4. Test Circuit http://onsemi.com 6 MC74HC4060A Q4 Q5 7 Osc Out 1 Osc In Reset Q13 Q14 1 2 3 C Q C Q C Q C Q C Q C C Q C Q C Q C Q C Q C R Osc Out 2 5 Q12 R 9 Q6 = Pin 4 Q7 = Pin 6 Q8 = Pin 14 Q9 = Pin 13 10 Q10 = Pin 15 VCC = Pin 16 GND = Pin 8 11 12 Figure 5. Expanded Logic Diagram Reset For 2.0V ≤ VCC ≤ 6.0V 10Rtc > RS > 2Rtc 400Hz ≤ f ≤ 400Khz: 12 Osc In 11 Osc Out 1 10 Osc Out 2 9 f[ Rtc RS Ctc 1 (finHz, R inohms, C infarads) tc tc 3RtcCtc The formula may vary for other frequencies. Figure 6. Oscillator Circuit Using RC Configuration Reset 12 Osc In 11 Osc Out 1 10 Rf R1 C1 C2 Figure 7. Pierce Crystal Oscillator Circuit http://onsemi.com 7 9 Osc Out 2 Q MC74HC4060A TABLE 1. CRYSTAL OSCILLATOR AMPLIFIER SPECIFICATIONS (TA = 25°C; Input = Pin 11, Output = Pin 10) Type Positive Reactance (Pierce) Input Resistance, Rin 60MW Minimum Output Impedance, Zout (4.5V Supply) 200W (See Text) Input Capacitance, Cin 5pF Typical Output Capacitance, Cout 7pF Typical Series Capacitance, Ca 5pF Typical Open Loop Voltage Gain with Output at Full Swing, α 3Vdc Supply 4Vdc Supply 5Vdc Supply 6Vdc Supply 5.0 Expected Minimum 4.0 Expected Minimum 3.3 Expected Minimum 3.1 Expected Minimum PIERCE CRYSTAL OSCILLATOR DESIGN RS 1 2 LS CS 1 2 1 Re Xe 2 CO Value are supplied by crystal manufacturer (parallel resonant crystal). Figure 8. Equivalent Crystal Networks RS −jXC2 Rload Ca −jXCo jXLs Zload −jXCs R Xload Cin −jXC Cout NOTE: C = C1 + Cin and R = R1 + Rout. Co is considered as part of the load. Ca and Rf typically have minimal effect below 2MHz. Values are listed in Table 1. Figure 9. Series Equivalent Crystal Load Figure 10. Parasitic Capacitances of the Amplifier http://onsemi.com 8 MC74HC4060A DESIGN PROCEDURES The following procedure applies for oscillators operating below 2MHz where Z is a resistor R1. Above 2MHz, additional impedance elements should be considered: Cout and Ca of the amp, feedback resistor Rf, and amplifier phase shift error from 180°C. Step 1: Calculate the equivalent series circuit of the crystal at the frequency of oscillation. Ze + * jXCo(Rs ) jXLs * jXCs) * jXCo ) Rs ) jXLs * jXCs + Re ) jXe Reactance jXe should be positive, indicating that the crystal is operating as an inductive reactance at the oscillation frequency. The maximum Rs for the crystal should be used in the equation. Step 2: Determine β, the attenuation, of the feedback network. For a closed-loop gain of 2,Aνβ = 2,β = 2/Aν where Aν is the gain of the HC4060A amplifier. Step 3: Determine the manufacturer’s loading capacitance. For example: A manufacturer may specify an external load capacitance of 32pF at the required frequency. Step 4: Determine the required Q of the system, and calculate Rload, For example, a manufacturer specifies a crystal Q of 100,000. In-circuit Q is arbitrarily set at 20% below crystal Q or 80,000. Then Rload = (2πfoLS/Q) − Rs where Ls and Rs are crystal parameters. Step 5: Simultaneously solve, using a computer, b+ XC @ XC2 (with feedback phase shift = 180°) R @ Re ) XC2 (Xe * XC) Xe + XC2 ) XC ) Rload + ReXC2 R + XCload (where the loading capacitor is an external load, not including Co) RXCoXC2 [(XC ) XC2)(XC ) XCo) * XC(XC ) XCo ) XC2)] X2C2(XC ) XCo)2 ) R2(XC ) XCo ) XC2)2 ( Eq 1 ) ( Eq 2 ) ( Eq 3 ) Here R = Rout + R1. Rout is amp output resistance, R1 is Z. The C corresponding to XC is given by C = C1 + Cin. Alternately, pick a value for R1 (i.e, let R1 = RS). Solve Equations 1 and 2 for C1 and C2. Use Equation 3 and the fact that Q = 2πfoLs/(Rs + Rload) to find in-circuit Q. If Q is not satisfactory pick another value for R1 and repeat the procedure. CHOOSING R1 the first overtone. Rf must be large enough so as to not affect Power is dissipated in the effective series resistance of the the phase of the feedback network in an appreciable manner. crystal. The drive level specified by the crystal manufacturer ACKNOWLEDGEMENTS AND RECOMMENDED is the maximum stress that a crystal can withstand without REFERENCES damage or excessive shift in frequency. R1 limits the drive The following publications were used in preparing this level. data sheet and are hereby acknowledged and recommended To verify that the maximum dc supply voltage does not for reading: overdrive the crystal, monitor the output frequency as a Technical Note TN-24, Statek Corp. function of voltage at Osc Out 2 (Pin 9). The frequency Technical Note TN-7, Statek Corp. should increase very slightly as the dc supply voltage is D. Babin, “Designing Crystal Oscillators”, Machine increased. An overdriven crystal will decrease in frequency Design, March 7, 1985. or become unstable with an increase in supply voltage. The D. Babin, “Guidelines for Crystal Oscillator Design”, operating supply voltage must be reduced or R1 must be Machine Design, April 25, 1985. increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is ALSO RECOMMENDED FOR READING: proportional to the value of R1. E. Hafner, “The Piezoelectric Crystal Unit-Definitions and Method of Measurement”, Proc. IEEE, Vol. 57, No. 2, Feb., 1969. D. Kemper, L. Rosine, “Quartz Crystals for Frequency Control”, Electro-Technology, June, 1969. P. J. Ottowitz, “A Guide to Crystal Selection”, Electronic Design, May, 1966. SELECTING Rf The feedback resistor, Rf, typically ranges up to 20MW. Rf determines the gain and bandwidth of the amplifier. Proper bandwidth insures oscillation at the correct frequency plus roll-off to minimize gain at undesirable frequencies, such as http://onsemi.com 9 MC74HC4060A 1 2 4 8 16 32 64 128 256 Clock Reset Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q12 Q13 Q14 Figure 11. Timing Diagram http://onsemi.com 10 512 1024 2048 4096 8192 16384 MC74HC4060A PACKAGE DIMENSIONS PDIP−16 N SUFFIX CASE 648−08 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. −A− 16 9 1 8 B F C L DIM A B C D F G H J K L M S S SEATING PLANE −T− K H G D M J 16 PL 0.25 (0.010) T A M M INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 SOIC−16 D SUFFIX CASE 751B−05 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 16 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S http://onsemi.com 11 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 MC74HC4060A PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE A 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S ÇÇÇ ÇÇÇ ÉÉ ÇÇÇ ÉÉ K K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. 8 1 N 0.25 (0.010) 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. M N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE H D DETAIL E G http://onsemi.com 12 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74HC4060A PACKAGE DIMENSIONS SOEIAJ−16 F SUFFIX CASE 966−01 ISSUE O 16 LE 9 Q1 M_ E HE 1 8 L DETAIL P Z D e VIEW P A DIM A A1 b c D E e HE L LE M Q1 Z A1 b 0.13 (0.005) c M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). 0.10 (0.004) http://onsemi.com 13 MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 −−− 0.78 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 −−− 0.031 MC74HC4060A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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