GS81302T08/09/18/36E-375/350/333/300/250
144Mb SigmaDDRTM-II
Burst of 2 SRAM
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
SigmaDDR™ Family Overview
The GS81302T08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302T08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302T08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
375 MHz–250 MHz
1.8 V VDD
1.8 V and 1.5 V I/O
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 is used to initialize the pointers that control the data
multiplexer / de-multiplexer so the RAM can perform "critical
word first" operations. From an external address point of view,
regardless of the starting point, the data transfers always follow
the same sequence {0, 1} or {1, 0} (where the digits shown
represent A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B2 RAMs are one address pin less than the advertised index
depth (e.g., the 16M x 8 has an 8M addressable index, and A0
is not an accessible address pin).
Parameter Synopsis
Rev: 1.03b 12/2011
-375
-350
-333
-300
-250
tKHKH
2.66 ns
2.86 ns
3.0 ns
3.3 ns
4.0 ns
tKHQV
0.45 ns
0.45 ns
0.45 ns
0.45 ns
0.45 ns
1/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
4M x 36 SigmaDDR-II SRAM—Top View
1
2
3
4
5
6
7
8
9
10
11
A
CQ
SA
SA
R/W
BW2
K
BW1
LD
SA
SA
CQ
B
NC
DQ27
DQ18
SA
BW3
K
BW0
SA
NC/SA
(288Mb)
NC
DQ8
C
NC
NC
DQ28
VSS
SA
SA0
SA
VSS
NC
DQ17
DQ7
D
NC
DQ29
DQ19
VSS
VSS
VSS
VSS
VSS
NC
NC
DQ16
E
NC
NC
DQ20
VDDQ
VSS
VSS
VSS
VDDQ
NC
DQ15
DQ6
F
NC
DQ30
DQ21
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
DQ31
DQ22
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ14
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
DQ32
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ13
DQ4
K
NC
NC
DQ23
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ12
DQ3
L
NC
DQ33
DQ24
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
DQ34
VSS
VSS
VSS
VSS
VSS
NC
DQ11
DQ1
N
NC
DQ35
DQ25
VSS
SA
SA
SA
VSS
NC
NC
DQ10
P
NC
NC
DQ26
SA
SA
C
SA
SA
NC
DQ9
DQ0
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
11 x 15 Bump BGA—13 x 15 mm2 Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to DQ0:DQ8; BW1 controls writes to DQ9:DQ17; BW2 controls writes to DQ18:DQ26; BW3 controls writes to
DQ27:DQ35.
2. B9 is the expansion address.
Rev: 1.03b 12/2011
2/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
8M x 18 SigmaDDR-II SRAM—Top View
1
2
3
4
5
6
7
8
9
10
11
A
CQ
SA
SA
R/W
BW1
K
SA
LD
SA
SA
CQ
B
NC
DQ9
NC
SA
NC/SA
(288Mb)
K
BW0
SA
NC
NC
DQ8
C
NC
NC
NC
VSS
SA
SA0
SA
VSS
NC
DQ7
NC
D
NC
NC
DQ10
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ11
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ6
F
NC
DQ12
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
NC
DQ13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ4
NC
K
NC
NC
DQ14
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ3
L
NC
DQ15
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
DQ1
NC
N
NC
NC
DQ16
VSS
SA
SA
SA
VSS
NC
NC
NC
P
NC
NC
DQ17
SA
SA
C
SA
SA
NC
NC
DQ0
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
11 x 15 Bump BGA—13 x 15 mm2 Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to DQ0:DQ8; BW1 controls writes to DQ9:DQ17.
2. B5 is the expansion address.
Rev: 1.03b 12/2011
3/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS81302T08/09/18/36E-375/350/333/300/250
16M x 9 SigmaDDR-II SRAM—Top View
1
2
3
4
5
6
7
8
9
10
11
A
CQ
SA
SA
R/W
NC
K
SA
LD
SA
SA
CQ
B
NC
NC
NC
SA
NC/SA
(288Mb)
K
BW0
SA
NC
NC
DQ4
C
NC
NC
NC
VSS
SA
SA
SA
VSS
NC
NC
NC
D
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ5
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
NC
DQ6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ2
NC
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
DQ7
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
N
NC
NC
NC
VSS
SA
SA
SA
VSS
NC
NC
NC
P
NC
NC
DQ8
SA
SA
C
SA
SA
NC
NC
DQ0
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
11 x 15 Bump BGA—13 x 15 mm2 Body—1 mm Bump Pitch
Notes:
1. Unlike the x36 and x18 versions of this device, the x8 and x9 versions do not give the user access to A0. SA0 is set to 0 at the beginning
of each access.
2. BW0 controls writes to DQ0:DQ8.
3. B5 is the expansion address.
Rev: 1.03b 12/2011
4/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
16M x 8 SigmaDDR-II SRAM—Top View
1
2
3
4
5
6
7
8
9
10
11
A
CQ
SA
SA
R/W
NW1
K
SA
LD
SA
SA
CQ
B
NC
NC
NC
SA
NC/SA
(288Mb)
K
NW0
SA
NC
NC
DQ3
C
NC
NC
NC
VSS
SA
SA
SA
VSS
NC
NC
NC
D
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ4
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
NC
DQ5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ1
NC
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
DQ6
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
N
NC
NC
NC
VSS
SA
SA
SA
VSS
NC
NC
NC
P
NC
NC
DQ7
SA
SA
C
SA
SA
NC
NC
NC
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
11 x 15 Bump BGA—13 x 15 mm2 Body—1 mm Bump Pitch
Notes:
1. Unlike the x36 and x18 versions of this device, the x8 and x9 versions do not give the user access to A0. SA0 is set to 0 at the beginning
of each access.
2. NW0 controls writes to DQ0:DQ3; NW1 controls writes to DQ4:DQ7.
3. B5 is the expansion address.
Rev: 1.03b 12/2011
5/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS81302T08/09/18/36E-375/350/333/300/250
Pin Description Table
Symbol
Description
Type
Comments
SA
Synchronous Address Inputs
Input
—
R/W
Synchronous Read/Write
Input
Read: Active High
Write: Active Low
BW0–BW3
Synchronous Byte Writes
Input
Active Low
x18/x36 only
NW0–NW1
Nybble Write Control Pin
Input
Active Low
x8 only
LD
Synchronous Load Pin
Input
Active Low
K
Input Clock
Input
Active High
K
Input Clock
Input
Active Low
C
Output Clock
Input
Active High
C
Output Clock
Input
Active Low
TMS
Test Mode Select
Input
—
TDI
Test Data Input
Input
—
TCK
Test Clock Input
Input
—
TDO
Test Data Output
Output
—
VREF
HSTL Input Reference Voltage
Input
—
ZQ
Output Impedance Matching Input
Input
—
MCL
Must Connect Low
—
—
DQ
Data I/O
Input/Output
Three State
Doff
Disable DLL when low
Input
Active Low
CQ
Output Echo Clock
Output
—
CQ
Output Echo Clock
Output
—
VDD
Power Supply
Supply
1.8 V Nominal
VDDQ
Isolated Output Buffer Supply
Supply
1.8 V or 1.5 V Nominal
VSS
Power Supply: Ground
Supply
—
NC
No Connect
—
—
Notes:
1. NC = Not Connected to die or any other pin
2. C, C, K, K cannot be set to VREF voltage.
3. When ZQ pin is directly connected to VDDQ, output impedance is set to minimum and it cannot be connected to ground or left unconnected.
Rev: 1.03b 12/2011
6/35
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© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Background
Common I/O SRAMs, from a system architecture point of view, are attractive in read dominated or block transfer applications.
Therefore, the SigmaDDR-II SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs are
unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed
Common I/O SRAM data bandwidth in half.
Burst Operations
Read and write operations are "burst" operations. In every case where a read or write command is accepted by the SRAM, it will
respond by issuing or accepting two beats of data, executing a data transfer on subsequent rising edges of K and K, as illustrated in
the timing diagrams. This means that it is possible to load new addresses every K clock cycle. Addresses can be loaded less often,
if intervening deselect cycles are inserted.
Deselect Cycles
Chip Deselect commands are pipelined to the same degree as read commands. This means that if a deselect command is applied to
the SRAM on the next cycle after a read command captured by the SRAM, the device will complete the two beat read data transfer
and then execute the deselect command, returning the output drivers to high-Z. A high on the LD pin prevents the RAM from
loading read or write command inputs and puts the RAM into deselect mode as soon as it completes all outstanding burst transfer
operations.
SigmaDDR-II Burst of 2 SRAM Read Cycles
The SRAM executes pipelined reads. The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The read
command (LD low and R/W high) is clocked into the SRAM by a rising edge of K. After the next rising edge of K, the SRAM
produces data out in response to the next rising edge of C (or the next rising edge of K, if C and C are tied high). The second beat
of data is transferred on the next rising edge of C, for a total of two transfers per address load.
SigmaDDR-II Burst of 2 SRAM Write Cycles
The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The SRAM executes "late write" data transfers.
Data in is due at the device inputs on the rising edge of K following the rising edge of K clock used to clock in the write command
(LD and R/W low) and the write address. To complete the remaining beat of the burst of two write transfer, the SRAM captures
data in on the next rising edge of K, for a total of two transfers per address load.
Rev: 1.03b 12/2011
7/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Special Functions
Byte Write and Nybble Write Control
Byte Write Enable pins are sampled at the same time that Data In is sampled. A high on the Byte Write Enable pin associated with
a particular byte (e.g., BW0 controls D0–D8 inputs) will inhibit the storage of that particular byte, leaving whatever data may be
stored at the current address at that byte location undisturbed. Any or all of the Byte Write Enable pins may be driven high or low
during the data in sample times in a write sequence.
Each write enable command and write address loaded into the RAM provides the base address for a 2 beat data transfer. The x18
version of the RAM, for example, may write 36 bits in association with each address loaded. Any 9-bit byte may be masked in any
write sequence.
Nybble Write (4-bit) write control is implemented on the 8-bit-wide version of the device. For the x8 version of the device,
“Nybble Write Enable” and “NBx” may be substituted in all the discussion above.
Example x18 RAM Write Sequence using Byte Write Enables
Data In Sample Time
BW0
BW1
D0–D8
D9–D17
Beat 1
0
1
Data In
Don’t Care
Beat 2
1
0
Don’t Care
Data In
Resulting Write Operation
Byte 1
D0–D8
Byte 2
D9–D17
Byte 3
D0–D8
Byte 4
D9–D17
Written
Unchanged
Unchanged
Written
Beat 1
Beat 2
Output Register Control
SigmaDDR-II SRAMs offer two mechanisms for controlling the output data registers. Typically, control is handled by the Output
Register Clock inputs, C and C. The Output Register Clock inputs can be used to make small phase adjustments in the firing of the
output registers by allowing the user to delay driving data out as much as a few nanoseconds beyond the next rising edges of the K
and K clocks. If the C and C clock inputs isare tied high, the RAM reverts to K and K control of the outputs, allowing the RAM to
function as a conventional pipelined read SRAM.
FLXDrive-II Output Driver Impedance Control
HSTL I/O SigmaDDR-II SRAMs are supplied with programmable impedance output drivers. The ZQ pin must be connected to
VSS via an external resistor, RQ, to allow the SRAM to monitor and adjust its output driver impedance. The value of RQ must be
5X the value of the desired RAM output impedance at mid-rail. The allowable range of RQ to guarantee impedance matching
continuously is between 175Ω and 350Ω. Periodic readjustment of the output driver impedance is necessary as the impedance is
affected by drifts in supply voltage and temperature. The SRAM’s output impedance circuitry compensates for drifts in supply
voltage and temperature. A clock cycle counter periodically triggers an impedance evaluation, resets and counts again. Each
impedance evaluation may move the output driver impedance level one step at a time towards the optimum level. The output driver
is implemented with discrete binary weighted impedance steps.
Rev: 1.03b 12/2011
8/35
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Example Four Bank Depth Expansion Schematic
LD3
LD2
LD1
LD0
R/W
A0–An
K
Bank 0
Bank 1
Bank 2
Bank 3
A
A
A
A
LD
LD
LD
LD
R/W
R/W
R/W
R/W
K CQ
DQ
K
C
C
K
CQ
K
DQ
C
CQ
DQ
C
CQ
DQ
C
DQ1–DQn
CQ
Note:
For simplicity BWn (or NWn), K, and C are not shown.
Rev: 1.03b 12/2011
9/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS81302T08/09/18/36E-375/350/333/300/250
Common I/O SigmaDDR-II Burst of 2 SRAM Truth Table
DQ
Kn
LD
↑
1
↑
↑
R/W
Operation
A+0
A+1
X
Hi-Z
Hi-Z
Deselect
0
0
D@Kn+1
D@Kn+1
Write
0
1
Q@Kn+1
or
Cn+1
Q@Kn+2
or
Cn+2
Read
Note:
Q is controlled by K clocks if C clocks are not used.
Rev: 1.03b 12/2011
10/35
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Burst of 2 Byte Write Clock Truth Table
BW
BW
Current Operation
D
D
K↑
(tn + 1)
K↑
(tn + 1½)
K↑
(tn)
K↑
(tn + 1)
K↑
(tn + 1½)
T
T
Write
Dx stored if BWn = 0 in both data transfers
D1
D2
T
F
Write
Dx stored if BWn = 0 in 1st data transfer only
D1
X
F
T
Write
Dx stored if BWn = 0 in 2nd data transfer only
X
D2
F
F
Write Abort
No Dx stored in either data transfer
X
X
Notes:
1. “1” = input “high”; “0” = input “low”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
2. If one or more BWn = 0, then BW = “T”, else BW = “F”.
Burst of 2 Nybble Write Clock Truth Table
NW
NW
Current Operation
D
D
K↑
(tn + 1)
K↑
(tn + 1½)
K↑
(tn)
K↑
(tn + 1)
K↑
(tn + 1½)
T
T
Write
Dx stored if NWn = 0 in both data transfers
D1
D2
T
F
Write
Dx stored if NWn = 0 in 1st data transfer only
D1
X
F
T
Write
Dx stored if NWn = 0 in 2nd data transfer only
X
D2
F
F
Write Abort
No Dx stored in either data transfer
X
X
Notes:
1. “1” = input “high”; “0” = input “low”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
2. If one or more NWn = 0, then NW = “T”, else NW = “F”.
Rev: 1.03b 12/2011
11/35
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x36 Byte Write Enable (BWn) Truth Table
BW0
BW1
BW2
BW3
D0–D8
D9–D17
D18–D26
D27–D35
1
1
1
1
Don’t Care
Don’t Care
Don’t Care
Don’t Care
0
1
1
1
Data In
Don’t Care
Don’t Care
Don’t Care
1
0
1
1
Don’t Care
Data In
Don’t Care
Don’t Care
0
0
1
1
Data In
Data In
Don’t Care
Don’t Care
1
1
0
1
Don’t Care
Don’t Care
Data In
Don’t Care
0
1
0
1
Data In
Don’t Care
Data In
Don’t Care
1
0
0
1
Don’t Care
Data In
Data In
Don’t Care
0
0
0
1
Data In
Data In
Data In
Don’t Care
1
1
1
0
Don’t Care
Don’t Care
Don’t Care
Data In
0
1
1
0
Data In
Don’t Care
Don’t Care
Data In
1
0
1
0
Don’t Care
Data In
Don’t Care
Data In
0
0
1
0
Data In
Data In
Don’t Care
Data In
1
1
0
0
Don’t Care
Don’t Care
Data In
Data In
0
1
0
0
Data In
Don’t Care
Data In
Data In
1
0
0
0
Don’t Care
Data In
Data In
Data In
0
0
0
0
Data In
Data In
Data In
Data In
x18 Byte Write Enable (BWn) Truth Table
BW0
BW1
D0–D8
D9–D17
1
1
Don’t Care
Don’t Care
0
1
Data In
Don’t Care
1
0
Don’t Care
Data In
0
0
Data In
Data In
x8 Nybble Write Enable (NWn) Truth Table
NW0
NW1
D0–D3
D4–D7
1
1
Don’t Care
Don’t Care
0
1
Data In
Don’t Care
1
0
Don’t Care
Data In
0
0
Data In
Data In
Rev: 1.03b 12/2011
12/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VREF
Voltage in VREF Pins
–0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
TSTG
Storage Temperature
–55 to 125
o
C
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
—
VDD
V
Reference Voltage
VREF
0.68
—
0.95
V
Note:
The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The power
down sequence must be the reverse. VDDQ must not exceed VDD. For more information, read AN1021 SigmaQuad and SigmaDDR Power-Up.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
0
25
85
°C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
°C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Rev: 1.03b 12/2011
13/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Thermal Impedance
Package
Test PCB
Substrate
θ JA (C°/W)
Airflow = 0 m/s
θ JA (C°/W)
Airflow = 1 m/s
θ JA (C°/W)
Airflow = 2 m/s
θ JB (C°/W)
θ JC (C°/W)
165 BGA
4-layer
16.4
13.4
12.4
8.6
1.2
Notes:
1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number.
2. Please refer to JEDEC standard JESD51-6.
3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
HSTL I/O DC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
DC Input Logic High
VIH (dc)
VREF + 0.10
VDDQ + 0.3 V
V
1
DC Input Logic Low
VIL (dc)
–0.3 V
VREF – 0.10
V
1
Notes:
1. Compatible with both 1.8 V and 1.5 V I/O drivers
2. These are DC test criteria. DC design criteria is VREF ± 50 mV. The AC VIH/VIL levels are defined separately for measuring timing parameters.
3. VIL (Min) DC = –0.3 V, VIL(Min) AC = –1.5 V (pulse width ≤ 3 ns).
4. VIH (Max) DC = VDDQ + 0.3 V, VIH(Max) AC = VDDQ + 0.85 V (pulse width ≤ 3 ns).
HSTL I/O AC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
AC Input Logic High
VIH (ac)
VREF + 0.20
—
V
2,3
AC Input Logic Low
VIL (ac)
—
VREF – 0.20
V
2,3
VREF (ac)
—
5% VREF (DC)
V
1
VREF Peak-to-Peak AC Voltage
Notes:
1. The peak-to-peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.
2. To guarantee AC characteristics, VIH,VIL, Trise, and Tfall of inputs and clocks must be within 10% of each other.
3. For devices supplied with HSTL I/O input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
Rev: 1.03b 12/2011
14/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKHKH
VDD + 1.0 V
VSS
50%
50%
VDD
VSS – 1.0 V
20% tKHKH
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Output Capacitance
COUT
VOUT = 0 V
6
7
pF
Clock Capacitance
CCLK
—
5
6
pF
Note:
This parameter is sample tested.
AC Test Conditions
Parameter
Conditions
Input high level
VDDQ
Input low level
0V
Max. input slew rate
2 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
AC Test Load Diagram
DQ
50Ω
RQ = 250 Ω (HSTL I/O)
VREF = 0.75 V
VT = VDDQ/2
Rev: 1.03b 12/2011
15/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Input and Output Leakage Characteristics
Parameter
Symbol
Test Conditions
Min.
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–2 uA
2 uA
Doff
IILDOFF
VIN = 0 to VDD
–20 uA
2 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDDQ
–2 uA
2 uA
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
VOH1
VDDQ/2
VDDQ
V
1, 3
Output Low Voltage
VOL1
Vss
VDDQ/2
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and VDDQ = 1.5 V or 1.8 V
4. 0Ω ≤ RQ ≤ ∞Ω
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Rev: 1.03b 12/2011
16/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Operating Currents
-375
Parameter
Symbol
Test Conditions
Operating Current (x36):
DDR
IDD
Operating Current (x18):
DDR
-350
-333
-300
-250
Notes
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
VDD = Max, IOUT = 0 mA
Cycle Time ≥ tKHKH Min
940
mA
950
mA
895
mA
905
mA
850
mA
860
mA
780
mA
790
mA
670
mA
680
mA
2, 3
IDD
VDD = Max, IOUT = 0 mA
Cycle Time ≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Operating Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time ≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Operating Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time ≥ tKHKH Min
845
mA
855
mA
800
mA
810
mA
755
mA
765
mA
690
mA
700
mA
595
mA
605
mA
2, 3
Standby Current (NOP):
DDR
ISB1
280
mA
290
mA
275
mA
285
mA
270
mA
280
mA
260
mA
270
mA
245
mA
255
mA
2, 4
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs ≤ 0.2 V or ≥ VDD – 0.2 V
Notes:
1.
2.
3.
4.
Power measured with output pins floating.
Minimum cycle, IOUT = 0 mA
Operating current is calculated with 50% read cycles and 50% write cycles.
Standby Current is only after all pending read and write burst operations are completed.
Rev: 1.03b 12/2011
17/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Parameter
Symbol
-375
-350
-333
-300
-250
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Notes
AC Electrical Characteristics
Clock
K, K Clock Cycle Time
C, C Clock Cycle Time
tKHKH
tCHCH
2.66
8.4
2.86
8.4
3.0
4.5
3.3
4.5
4.0
8.4
ns
tKC Variable
tKCVar
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
ns
K, K Clock High Pulse Width
C, C Clock High Pulse Width
tKHKL
tCHCL
1.06
—
1.14
—
1.2
—
1.32
—
1.6
—
ns
K, K Clock Low Pulse Width
C, C Clock Low Pulse Width
tKLKH
tCLCH
1.06
—
1.14
—
1.2
—
1.32
—
1.6
—
ns
K to K High
C to C High
tKHKH
tCHCH
1.13
—
1.23
—
1.35
—
1.49
—
1.8
—
ns
K to K High
C to C High
tKHKH
tCHCH
1.13
—
1.23
—
1.35
—
1.49
—
1.8
—
ns
K, K Clock High to C, C Clock High
tKHCH
0
1.21
0
1.29
0
1.35
0
1.49
0
1.8
ns
DLL Lock Time
tKCLock
1024
—
1024
—
1024
—
1024
—
1024
—
cycle
K Static to DLL reset
tKCReset
30
—
30
—
30
—
30
—
30
—
ns
K, K Clock High to Data Output Valid
C, C Clock High to Data Output Valid
tKHQV
tCHQV
—
0.45
—
0.45
—
0.45
—
0.45
—
0.45
ns
4
K, K Clock High to Data Output Hold
C, C Clock High to Data Output Hold
tKHQX
tCHQX
–0.45
—
–0.45
—
–0.45
—
–0.45
—
–0.45
—
ns
4
K, K Clock High to Echo Clock Valid
C, C Clock High to Echo Clock Valid
tKHCQV
tCHCQV
—
0.45
—
0.45
—
0.45
—
0.45
—
0.45
ns
K, K Clock High to Echo Clock Hold
C, C Clock High to Echo Clock Hold
tKHCQX
tCHCQX
–0.45
—
–0.45
—
–0.45
—
–0.45
—
–0.45
—
ns
CQ, CQ High Output Valid
tCQHQV
—
0.2
—
0.23
—
0.25
—
0.27
—
0.30
ns
8
CQ, CQ High Output Hold
tCQHQX
–0.2
—
–0.23
—
–0.25
—
–0.27
—
–0.30
—
ns
8
CQ Phase Distortion
tCQHCQH
tCQHCQH
0.9
—
1.0
—
1.10
—
1.24
—
1.55
—
ns
K Clock High to Data Output High-Z
C Clock High to Data Output High-Z
tKHQZ
tCHQZ
—
0.45
—
0.45
—
0.45
—
0.45
—
0.45
ns
4
K Clock High to Data Output Low-Z
C Clock High to Data Output Low-Z
tKHQX1
tCHQX1
–0.45
—
–0.45
—
–0.45
—
–0.45
—
–0.45
—
ns
4
Address Input Setup Time
tAVKH
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
1
Control Input Setup Time(R/ W) (LD)
tIVKH
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
2
Control Input Setup Time
(BWX) (NWX)
tIVKH
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
3
Data Input Setup Time
tDVKH
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
6
7
Output Times
Setup Times
Rev: 1.03b 12/2011
18/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Parameter
Symbol
-375
-350
-333
-300
-250
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Notes
AC Electrical Characteristics (Continued)
Hold Times
Address Input Hold Time
tKHAX
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
1
Control Input Hold Time (R/ W) (LD)
tKHIX
0.4
—
0.4
—
0.4
—
0.4
—
0.5
—
ns
2
Control Input Hold Time
(BWX) (NWX)
tKHIX
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
3
Data Input Hold Time
tKHDX
0.28
—
0.28
—
0.28
—
0.3
—
0.35
—
ns
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
All Address inputs must meet the specified setup and hold times for all latching clock edges.
Control signals are R/ W, LD.
Control signals are BW0, BW1, and (NW0, NW1 for x8) and (BW2, BW3 for x36).
If C, C are tied high, K, K become the references for C, C timing parameters
To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN
parameter that is worst case at totally different test conditions (0°C, 1.9 V) than tCHQZ, which is a MAX parameter (worst case at 70°C, 1.7 V). It is not possible for two
SRAMs on the same board to be at such different voltages and temperatures.
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable.
Echo clock is very tightly controlled to data valid/data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guard
bands and test setup variations.
Rev: 1.03b 12/2011
19/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
Rev: 1.03b 12/2011
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/35
CQ
CQ
DQ
C
C
BWx
R/W
LD
Address
K
K
KHKH
KHKH
KHIX
IVKH
NOP
A
KHKL
KHIX
IVKH
KHAX
AVKH
KHKL
Read A
KLKH
CHCQV
CHCQX
KLKH
B
KHnKH
KHnKH
Read B
A
CQHQV
CHQV
NOP
A+1
CQHQX
B
CHQX1
C
Write C
C and C Controlled Read First Timing Diagram
B+1
C
CHQX
C
D
DVKH
KHIX
IVKH
Read D
C+1
C+1
KHDX
GS81302T08/09/18/36E-375/350/333/300/250
© 2011, GSI Technology
Rev: 1.03b 12/2011
CQ
CQ
DQ1
BWx
R/W
LD
Address
K
K
KHKH
KHCQX
KHCQV
KHBX
BVKH
NOP
A
KHAX
KHBX
BVKH
AVKH
KHKL
Read A
B
KHCQV
KHCQX
KLKH
KHnKH
Read B
A
CQHQV
KHQX1
A+1
NOP
CQHQX
B
KHQV
C
B+1
Write C
K and K Controlled Read First Timing Diagram
KHQX
C
C
D
DVKH
C+1
C+1
KHBX
BVKH
Read D
KHDX
GS81302T08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
21/35
© 2011, GSI Technology
Rev: 1.03b 12/2011
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
22/35
CQ
CQ
DQ
C
C
BWx
R/W
LD
Address
K
K
CHCQX
CHCQV
KHIX
IVKH
NOP
CHCQX
A
KHKH
KHKH
KHAX
AVKH
Write A
DVKH
A+1
KHKL
C
KHnKH
KHnKH
Read C
KHDX
KLKH
KLKH
A+1
KHIX
IVKH
KHIX
IVKH
CHCQV
A
A
B
KHKL
Read B
B
CQHQV
CHQX1
D
NOP
B+1
CHQV
C
E
Write D
CQHQX
C and C Controlled Write First Timing Diagram
C+1
CHQX
D
D
NOP
D+1
D+1
GS81302T08/09/18/36E-375/350/333/300/250
© 2011, GSI Technology
Rev: 1.03b 12/2011
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
23/35
CQ
CQ
DQ
BWx
R/ W
LD
Address
K
K
KHCQV
IVKH
KHIX
NOP
KHCQX
AVKH
KHAX
KHKH
Write A
KHCQV
DVKH
IVKH
KHIX
IVKH
KHIX
KHKL
Read B
KHDX
KLKH
KHnKH
Read C
CQHQV
B
KHQX1
B+1
KHQV
NOP
K and K Controlled Write First Timing Diagram
C+1
KHQX
CQHQX
C
Write D
NOP
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© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output
drivers are powered by VDD.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected.
JTAG Pin Descriptions
Pin
Pin Name
I/O
Description
TCK
Test Clock
In
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.
TMS
Test Mode Select
In
The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
controller state machine. An undriven TMS input will produce the same result as a logic one input
level.
In
The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.
TDI
Test Data In
TDO
Test Data Out
Output that is active depending on the state of the TAP state machine. Output changes in
Out response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.
Note:
This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
JTAG Port Registers
Overview
The various JTAG registers, refered to as Test Access Port or TAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.
Instruction Register
The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.
Bypass Register
The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.
Rev: 1.03b 12/2011
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Boundary Scan Register
The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
JTAG TAP Block Diagram
·
·
·
·
·
·
Boundary Scan Register
·
·
0
Bypass Register
0
108
·
1
·
·
2 1 0
Instruction Register
TDI
TDO
ID Code Register
31 30 29
·
· ··
2 1 0
Control Signals
TMS
TCK
Test Access Port (TAP) Controller
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
Rev: 1.03b 12/2011
25/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
GSI Technology
JEDEC Vendor
ID Code
See BSDL Model
Bit #
Presence Register
ID Register Contents
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
X
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0 0 1 1 0 1 1 0 0 1
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
Rev: 1.03b 12/2011
26/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
JTAG Tap Controller State Diagram
1
0
Test Logic Reset
0
Run Test Idle
1
Select DR
1
Select IR
0
0
1
1
Capture DR
Capture IR
0
0
Shift DR
1
1
Shift IR
0
1
1
Exit1 DR
0
Exit1 IR
0
0
Pause DR
1
Exit2 DR
1
Update DR
1
1
0
0
Pause IR
1
Exit2 IR
0
1
0
0
Update IR
1
0
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
still determined by its input pins.
Rev: 1.03b 12/2011
27/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO.
Forces all RAM output drivers to High-Z.
1
GSI
011
GSI private instruction.
1
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO.
1
GSI
101
GSI private instruction.
1
GSI
110
GSI private instruction.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.03b 12/2011
28/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
Test Port Input Low Voltage
VILJ
–0.3
0.3 * VDD
V
1
Test Port Input High Voltage
VIHJ
0.7 * VDD
VDD +0.3
V
1
TMS, TCK and TDI Input Leakage Current
IINHJ
–300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–1
100
uA
3
TDO Output Leakage Current
IOLJ
–1
1
uA
4
Test Port Output High Voltage
VOHJ
VDD – 0.2
—
V
5, 6
Test Port Output Low Voltage
VOLJ
—
0.2
V
5, 7
Test Port Output CMOS High
VOHJC
VDD – 0.1
—
V
5, 8
Test Port Output CMOS Low
VOLJC
—
0.1
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –1 V < Vi < VDDn +1 V not to exceed 2.9 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V ≤ VIN ≤ VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDD supply.
6. IOHJ = –2 mA
7. IOLJ = + 2 mA
8. IOHJC = –100 uA
9. IOLJC = +100 uA
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDD/2
JTAG Port AC Test Load
TDO
50Ω
30pF*
VDD/2
* Distributed Test Jig Capacitance
Notes:
1. Include scope and jig capacitance.
2. Test conditions as shown unless otherwise noted.
Rev: 1.03b 12/2011
29/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
JTAG Port Timing Diagram
tTKC
tTKH
tTKL
TCK
tTH
tTS
TDI
tTH
tTS
TMS
tTKQ
TDO
tTH
tTS
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
—
ns
TCK Low to TDO Valid
tTKQ
—
20
ns
TCK High Pulse Width
tTKH
20
—
ns
TCK Low Pulse Width
tTKL
20
—
ns
TDI & TMS Set Up Time
tTS
10
—
ns
TDI & TMS Hold Time
tTH
10
—
ns
Rev: 1.03b 12/2011
30/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Package Dimensions—165-Bump FPBGA (Package E)
A1 CORNER
TOP VIEW
BOTTOM VIEW
Ø0.10 M C
Ø0.25 M C A B
Ø0.40~0.60 (165x)
1 2 3 4 5 6 7 8 9 10 11
A1 CORNER
11 10 9 8 7 6 5 4 3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1.0
14.0
17±0.05
1.0
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
1.0
1.0
10.0
0.15 C
B
Rev: 1.03b 12/2011
0.20(4x)
0.36~0.46
1.50 MAX.
SEATING PLANE
C
15±0.05
31/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Ordering Information—GSI SigmaDDR-II SRAM
Org
Part Number1
Type
Package
Speed (MHz)
TJ2
16M x 8
GS81302T08E-375
SigmaDDR-II B2 SRAM
165-bump BGA
375
C
16M x 8
GS81302T08E-350
SigmaDDR-II B2 SRAM
165-bump BGA
350
C
16M x 8
GS81302T08E-333
SigmaDDR-II B2 SRAM
165-bump BGA
333
C
16M x 8
GS81302T08E-300
SigmaDDR-II B2 SRAM
165-bump BGA
300
C
16M x 8
GS81302T08E-250
SigmaDDR-II B2 SRAM
165-bump BGA
250
C
16M x 8
GS81302T08E-375I
SigmaDDR-II B2 SRAM
165-bump BGA
375
I
16M x 8
GS81302T08E-350I
SigmaDDR-II B2 SRAM
165-bump BGA
350
I
16M x 8
GS81302T08E-333I
SigmaDDR-II B2 SRAM
165-bump BGA
333
I
16M x 8
GS81302T08E-300I
SigmaDDR-II B2 SRAM
165-bump BGA
300
I
16M x 8
GS81302T08E-250I
SigmaDDR-II B2 SRAM
165-bump BGA
250
I
16M x 9
GS81302T09E-375
SigmaDDR-II B2 SRAM
165-bump BGA
375
C
16M x 9
GS81302T09E-350
SigmaDDR-II B2 SRAM
165-bump BGA
350
C
16M x 9
GS81302T09E-333
SigmaDDR-II B2 SRAM
165-bump BGA
333
C
16M x 9
GS81302T09E-300
SigmaDDR-II B2 SRAM
165-bump BGA
300
C
16M x 9
GS81302T09E-250
SigmaDDR-II B2 SRAM
165-bump BGA
250
C
16M x 9
GS81302T09E-375I
SigmaDDR-II B2 SRAM
165-bump BGA
375
I
16M x 9
GS81302T09E-350I
SigmaDDR-II B2 SRAM
165-bump BGA
350
I
16M x 9
GS81302T09E-333I
SigmaDDR-II B2 SRAM
165-bump BGA
333
I
16M x 9
GS81302T09E-300I
SigmaDDR-II B2 SRAM
165-bump BGA
300
I
16M x 9
GS81302T09E-250I
SigmaDDR-II B2 SRAM
165-bump BGA
250
I
8M x 18
GS81302T18E-375
SigmaDDR-II B2 SRAM
165-bump BGA
375
C
8M x 18
GS81302T18E-350
SigmaDDR-II B2 SRAM
165-bump BGA
350
C
8M x 18
GS81302T18E-333
SigmaDDR-II B2 SRAM
165-bump BGA
333
C
8M x 18
GS81302T18E-300
SigmaDDR-II B2 SRAM
165-bump BGA
300
C
8M x 18
GS81302T18E-250
SigmaDDR-II B2 SRAM
165-bump BGA
250
C
8M x 18
GS81302T18E-375I
SigmaDDR-II B2 SRAM
165-bump BGA
375
I
8M x 18
GS81302T18E-350I
SigmaDDR-II B2 SRAM
165-bump BGA
350
I
8M x 18
GS81302T18E-333I
SigmaDDR-II B2 SRAM
165-bump BGA
333
I
8M x 18
GS81302T18E-300I
SigmaDDR-II B2 SRAM
165-bump BGA
300
I
8M x 18
GS81302T18E-250I
SigmaDDR-II B2 SRAM
165-bump BGA
250
I
4M x 36
GS81302T36E-375
SigmaDDR-II B2 SRAM
165-bump BGA
375
C
4M x 36
GS81302T36E-350
SigmaDDR-II B2 SRAM
165-bump BGA
350
C
Notes:
1. For Tape and Reel add the character “T” to the end of the part number. Example: GS81302T36E-300T.
2. C = Commercial Temperature Range. I = Industrial Temperature Range.
Rev: 1.03b 12/2011
32/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Ordering Information—GSI SigmaDDR-II SRAM
Org
Part Number1
Type
Package
Speed (MHz)
TJ2
4M x 36
GS81302T36E-333
SigmaDDR-II B2 SRAM
165-bump BGA
333
C
4M x 36
GS81302T36E-300
SigmaDDR-II B2 SRAM
165-bump BGA
300
C
4M x 36
GS81302T36E-250
SigmaDDR-II B2 SRAM
165-bump BGA
250
C
4M x 36
GS81302T36E-375I
SigmaDDR-II B2 SRAM
165-bump BGA
375
I
4M x 36
GS81302T36E-350I
SigmaDDR-II B2 SRAM
165-bump BGA
350
I
4M x 36
GS81302T36E-333I
SigmaDDR-II B2 SRAM
165-bump BGA
333
I
4M x 36
GS81302T36E-300I
SigmaDDR-II B2 SRAM
165-bump BGA
300
I
4M x 36
GS81302T36E-250I
SigmaDDR-II B2 SRAM
165-bump BGA
250
I
16M x 8
GS81302T08GE-375
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
C
16M x 8
GS81302T08GE-350
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
C
16M x 8
GS81302T08GE-333
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
C
16M x 8
GS81302T08GE-300
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
C
16M x 8
GS81302T08GE-250
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
C
16M x 8
GS81302T08GE-375I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
I
16M x 8
GS81302T08GE-350I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
I
16M x 8
GS81302T08GE-333I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
I
16M x 8
GS81302T08GE-300I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
I
16M x 8
GS81302T08GE-250I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
I
16M x 9
GS81302T09GE-375
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
C
16M x 9
GS81302T09GE-350
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
C
16M x 9
GS81302T09GE-333
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
C
16M x 9
GS81302T09GE-300
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
C
16M x 9
GS81302T09GE-250
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
C
16M x 9
GS81302T09GE-375I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
I
16M x 9
GS81302T09GE-350I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
I
16M x 9
GS81302T09GE-333I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
I
16M x 9
GS81302T09GE-300I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
I
16M x 9
GS81302T09GE-250I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
I
8M x 18
GS81302T18GE-375
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
C
8M x 18
GS81302T18GE-350
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
C
8M x 18
GS81302T18GE-333
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
C
8M x 18
GS81302T18GE-300
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
C
8M x 18
GS81302T18GE-250
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
C
Notes:
1. For Tape and Reel add the character “T” to the end of the part number. Example: GS81302T36E-300T.
2. C = Commercial Temperature Range. I = Industrial Temperature Range.
Rev: 1.03b 12/2011
33/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Ordering Information—GSI SigmaDDR-II SRAM
Org
Part Number1
Type
Package
Speed (MHz)
TJ2
8M x 18
GS81302T18GE-375I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
I
8M x 18
GS81302T18GE-350I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
I
8M x 18
GS81302T18GE-333I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
I
8M x 18
GS81302T18GE-300I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
I
8M x 18
GS81302T18GE-250I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
I
4M x 36
GS81302T36GE-375
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
C
4M x 36
GS81302T36GE-350
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
C
4M x 36
GS81302T36GE-333
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
C
4M x 36
GS81302T36GE-300
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
C
4M x 36
GS81302T36GE-250
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
C
4M x 36
GS81302T36GE-375I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
375
I
4M x 36
GS81302T36GE-350I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
350
I
4M x 36
GS81302T36GE-333I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
333
I
4M x 36
GS81302T36GE-300I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
300
I
4M x 36
GS81302T36GE-250I
SigmaDDR-II B2 SRAM
RoHS-compliant 165-bump BGA
250
I
Notes:
1. For Tape and Reel add the character “T” to the end of the part number. Example: GS81302T36E-300T.
2. C = Commercial Temperature Range. I = Industrial Temperature Range.
Rev: 1.03b 12/2011
34/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
GS81302T08/09/18/36E-375/350/333/300/250
Revision History
File Name
Types of Changes
Format or Content
GS81302Txx_r1
Format
• Creation of new datasheet
GS81302Txx_r1.00a
Content
• Corrected Ordering Information Table
Content
• Revised Four Bank Depth Expansion Schematic
• Revised Power Up Information
• Updated AC Characteristics Table
• Updated 165 BGA Package Drawing
• Updated JTAG Operating Port Information
• (Rev1.01a: removed CQ reference from SAMPLE-Z section in
JTAG Tap Instruction Set Summary)
• (Rev1.01b: Updated DLL Lock time to 2048 cycles)
Content
• Removed 200 MHz and 167 MHz speed bins
• Added 375 MHz and 350 MHz speed bins
• Updated thermal information
• (Rev1.02a: Updated erroneous information in AC Char table)
Content
• Added Op Currents
• Updated for MP status
• (Rev1.03a: Editorial updates)
• (Rev1.03b: Updated DLL lock time in AC Char table)
GS81302Txx_r1.01
GS81302Txx_r1.02
GS81302Txx_r1.03
Rev: 1.03b 12/2011
Revisions
35/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS81302T08E-333I GS81302T09E-375 GS81302T09E-333I GS81302T18GE-350I GS81302T18E-300I
GS81302T08GE-300 GS81302T36GE-250 GS81302T36GE-300I GS81302T36E-350I GS81302T36GE-375
GS81302T08E-250 GS81302T08E-375I GS81302T09GE-250 GS81302T18E-250I GS81302T09GE-250I
GS81302T08E-300 GS81302T18GE-333I GS81302T09GE-375 GS81302T36E-300 GS81302T18GE-375I
GS81302T18E-250 GS81302T36E-333I GS81302T36E-333 GS81302T18GE-333 GS81302T08GE-300I
GS81302T18GE-250 GS81302T09GE-350I GS81302T18E-350 GS81302T09E-300I GS81302T18GE-375
GS81302T08E-375 GS81302T09E-333 GS81302T08E-350 GS81302T09E-350 GS81302T18E-333I GS81302T08E333 GS81302T09E-350I GS81302T36E-250 GS81302T36E-350 GS81302T36GE-350 GS81302T08GE-250I
GS81302T36E-375I GS81302T08E-300I GS81302T09E-300 GS81302T09E-250I GS81302T18E-333
GS81302T18E-375I GS81302T18E-350I GS81302T18GE-250I GS81302T18E-300 GS81302T08E-250I
GS81302T36E-375 GS81302T36GE-375I GS81302T36E-300I GS81302T09GE-375I GS81302T08E-350I
GS81302T36GE-333 GS81302T18E-375 GS81302T36GE-333I GS81302T08GE-250 GS81302T09E-375I
GS81302T08GE-350 GS81302T08GE-375I GS81302T08GE-333I GS81302T08GE-375 GS81302T09GE-300I
GS81302T36GE-300 GS81302T09GE-333 GS81302T09GE-350 GS81302T18GE-300I GS81302T09GE-333I
GS81302T36GE-350I GS81302T09E-250 GS81302T09GE-300 GS81302T08GE-350I GS81302T36GE-250I
GS81302T36E-250I GS81302T18GE-300 GS81302T08GE-333 GS81302T18GE-350