ON BD675 Plastic mediumã ¡power silicon npn darlington Datasheet

BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
BD681 is a Preferred Device
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain:
•
•
•
•
hFE = 750 (Min) @ IC
= 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary
with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb−Free Packages are Available*
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4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2
BASE
3
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
BD675, A
BD677, A
BD679, A
BD681
VCEO
45
60
80
100
Vdc
BD675, A
BD677, A
BD679, A
BD681
VCBO
45
60
80
100
Vdc
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
TJ, Tstg
– 55 to + 150
°C
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
qJC
3.13
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
1
TO−225AA
CASE 77
STYLE 1
3 2
1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
B
BD6xxAG
BD6xx = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BD675/D
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
BVCEO
45
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
−
500
mAdc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ICBO
−
−
0.2
2.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
750
750
−
−
−
−
2.5
2.8
−
−
2.5
2.5
1.0
−
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(IC = 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD681
mAdc
mAdc
ON CHARACTERISTICS
DC Currert Gain, (Note 1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675, 677, 679, 681
BD675A, 677A, 679A
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
BD677, 679, 681
BD675A, 677A, 679A
Base−Emitter On Voltage, (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD677, 679, 681
BD675A, 677A, 679A
hFE
VCE(sat)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
5.0
IC, COLLECTOR CURRENT (AMP)
PD, POWER DISSIPATION (WATTS)
45
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
2.0
1.0
0.5
0.2
0.1
0.05
1.0
165
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
2.0
5.0
10
50
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 2. DC Safe Operating Area
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
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2
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
COLLECTOR
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
BASE
[ 8.0 k
[ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
BD675
TO−225AA
500 Units / Box
BD675G
TO−225AA
(Pb−Free)
500 Units / Box
BD675A
TO−225AA
500 Units / Box
BD675AG
TO−225AA
(Pb−Free)
500 Units / Box
BD677
TO−225AA
500 Units / Box
BD677G
TO−225AA
(Pb−Free)
500 Units / Box
BD677A
TO−225AA
500 Units / Box
BD677AG
TO−225AA
(Pb−Free)
500 Units / Box
BD679
TO−225AA
500 Units / Box
BD679G
TO−225AA
(Pb−Free)
500 Units / Box
BD679A
TO−225AA
500 Units / Box
BD679AG
TO−225AA
(Pb−Free)
500 Units / Box
BD681
TO−225AA
500 Units / Box
BD681G
TO−225AA
(Pb−Free)
500 Units / Box
http://onsemi.com
3
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BD675/D
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