ON MCR25D Silicon controlled rectifier Datasheet

MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C
• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code
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SCRs
25 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open)
MCR25D
MCR25M
MCR25N
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
4
Volts
400
600
800
ITSM
25
A
300
2
3
A
I2t
373
A2sec
PGM
20.0
Watts
PG(AV)
1
0.5
Watt
IGM
2.0
A
TJ
– 40 to
+125
°C
Tstg
– 40 to
+150
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR25D
TO220AB
50 Units/Rail
MCR25M
TO220AB
50 Units/Rail
MCR25N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 3
1
Publication Order Number:
MCR25/D
MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RθJC
RθJA
1.5
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
—
—
—
—
0.01
2.0
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM
IRRM
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage* (ITM = 50 A)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
IGT
4.0
12
30
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
VGT
0.5
0.67
1.0
Volts
Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
5.0
13
40
mA
Latching Current (VD = 12 V, IG = 30 mA)
IL
—
35
80
mA
Critical Rate of Rise of Off–State Voltage
(VD = 67% of Rated VDRM, Exponential Waveform, Gate Open,
TJ = 125°C)
dv/dt
100
250
—
V/µs
Critical Rate of Rise of On–State Current
(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA)
di/dt
—
—
50
A/µs
DYNAMIC CHARACTERISTICS
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MCR25D, MCR25M, MCR25N
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
IDRM
Peak Repetitive Off State Forward Voltage
Anode +
VTM
on state
Peak Forward Blocking Current
VRRM
IRRM
Peak Repetitive Off State Reverse Voltage
VTM
IH
Peak On State Voltage
IH
IRRM at VRRM
Peak Reverse Blocking Current
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
40
1.0
35
0.9
VGT, GATE TRIGGER VOLTAGE (V)
I GT, GATE TRIGGER CURRENT (mA)
Anode –
30
25
20
15
10
5
0
–40 –25 –10
5
20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
–40 –25 –10
5
20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
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3
I T, INSTANTANEOUS ON–STATE CURRENT (A)
MCR25D, MCR25M, MCR25N
1
Typical @ 25°C
R(t) TRANSIENT THERMAL R (NORMALIZED)
100
Maximum @ 125°C
10
Maximum @ 25°C
1
0.1
Z
0.1
0.9
1.3
1.7
2.1
2.5
2.9
0.1
1
Figure 3. Typical On–State Characteristics
10
100
t, TIME (ms)
1000
@
1 10 4
Figure 4. Transient Thermal Response
100
IL , LATCHING CURRENT (mA)
100
10
10
1
–40 –25 –10
5
20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
–40 –25 –10
5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
I H , HOLDING CURRENT (mA)
+ RqJC @ R(t)
0.01
0.5
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
130
120
TC , CASE TEMPERATURE ( °C)
qJC(t)
a
a = Conduction
110
Angle
100
dc
90
80
a = 30°
0
60°
90°
180°
2
4
6
8
10 12 14 16
18
IT(RMS), RMS ON–STATE CURRENT (AMPS)
20
32
28
180°
a
24
a = Conduction
20
60°
90°
Angle
16
a = 30°
12
8
4
0
0
2
4
6
8
10 12 14 16 18
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 8. On State Power Dissipation
Figure 7. Typical RMS Current Derating
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4
dc
20
MCR25D, MCR25M, MCR25N
2500
1200
2000
STATIC dv/dt (V/us)
1000
800
85°C
600
100°C
110°C
1500
VPK = 275
1000
VPK = 400
400
VPK = 600
TJ = 125°C
500
200
0
VPK = 800
0
200
300
400
500
600
700
800
80
85
90
95
100
105
110
TJ, Junction Temperature (°C )
VPK , Peak Voltage (Volts)
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage.
1 CYCLE
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
2
3
4
115
120
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature.
300
I TSM, SURGE CURRENT (AMPS)
STATIC dv/dt (V/us)
Gate Cathode Open,
(dv/dt does not depend on RGK )
Gate–Cathode Open,
(dv/dt does not depend on RGK)
5
6
7
NUMBER OF CYCLES
8
Figure 11. Maximum Non–Repetitive
Surge Current
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5
9
10
125
MCR25D, MCR25M, MCR25N
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
–T–
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 3:
PIN 1.
2.
3.
4.
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6
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
MCR25D, MCR25M, MCR25N
Notes
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7
MCR25D, MCR25M, MCR25N
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MCR25/D
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