AON2802 30V Dual N-Channel MOSFET General Description Product Summary The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 2A RDS(ON) (at VGS=10V) < 60mΩ RDS(ON) (at VGS=4.5V) < 68mΩ RDS(ON) (at VGS=2.5V) < 88mΩ Typical ESD protection HBM Class 3A DFN 2x2A Top View D2 Pin 1 G1 S1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS TA=25°C Continuous Drain Current G Pulsed Drain Current C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0: Sep. 2012 Steady-State ±12 V A 8 W 1.3 TJ, TSTG Symbol t ≤ 10s Units V 2.1 PD Junction and Storage Temperature Range Maximum 30 1.6 IDM TA=70°C S2 2 ID TA=70°C TA=25°C Power Dissipation B G2 G1 Pin 1 Gate-Source Voltage D2 D1 Bottom View D1 G2 S2 D1 D2 RθJA www.aosmd.com -55 to 150 Typ 50 80 °C Max 60 100 Units °C/W °C/W Page 1 of 5 AON2802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C ±10 µA 1.05 1.5 V 49 60 77 94 VGS=4.5V, ID=1A 54 68 mΩ VGS=2.5V, ID=1A 66 88 mΩ 1 V 1.5 A Gate-Body leakage current VDS=0V, VGS=±10V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=10V, VDS=5V 8 VGS=10V, ID=2A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=2A 12 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Crss Units V 1 VGS(th) Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 245 pF 35 pF 20 pF 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.7 10 nC Qg(4.5V) Total Gate Charge 2.6 5 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=2A 0.5 nC Qgd Gate Drain Charge 1.0 nC tD(on) Turn-On DelayTime 2 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=7.5Ω, RGEN=3Ω IF=2A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 22 ns 3.5 ns 2 ns nC 3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2012 www.aosmd.com Page 2 of 5 AON2802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 4.5V 15 15 ID(A) ID (A) 2.5V 10 10 125°C 5 5 25°C VGS=2.0V 0 0 0 1 2 3 4 0 5 100 2 3 4 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V VGS=4.5V 60 40 VGS=10V VGS=4.5V ID=1A 1.6 VGS=10V ID=2A 1.4 17 5 2 VGS=2.5V 10 I =1A 1.2 D 1 0.8 20 0 2 4 0 6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=2A 1.0E+01 100 40 1.0E+00 80 IS (A) RDS(ON) (mΩ Ω) 125°C 60 125°C 1.0E-01 1.0E-02 1.0E-03 40 25°C 25°C 1.0E-04 1.0E-05 20 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=15V ID=2A 350 8 Ciss Capacitance (pF) VGS (Volts) 300 6 4 250 200 150 100 Coss 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100.0 TA=25°C 1.0 150 10µs 100µs RDS(ON) limited 1ms Power (W) ID (Amps) 10.0 100 10ms 0.1 TJ(Max)=150°C TA=25°C 50 10s DC 0 0.0 1E-05 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep. 2012 www.aosmd.com Page 4 of 5 AON2802 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Sep. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5