MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 4.0 AMPERES, 10 VOLTS Features • • • • • • • • • Ultra Low VF 1st in the Market Place with a 10 VR Schottky Rectifier Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection Pb−Free Package is Available SMC CASE 403 PLASTIC MARKING DIAGRAM Mechanical Characteristics AYWW B4L1G G • Case: Epoxy, Molded • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B4L1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) • Lead and Mounting Surface Temperature for Soldering Purposes: • • 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (@ TL = 110°C) IO 4.0 A IFSM 150 A TJ −65 to +125 °C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature Device Package Shipping † MBRS410LT3 SMC 2500/Tape & Reel MBRS410LT3G SMC (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 2 1 Publication Order Number: MBRS410LT3/D MBRS410LT3 THERMAL CHARACTERISTICS Characteristic Symbol Min Pad (Note 2) 1 Inch Pad Unit °C/W Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient RqJL 12 7.0 RqJA 109 59 VF TJ = 25°C TJ = 100°C 0.31 0.33 0.35 0.200 0.225 0.250 TJ = 25°C TJ = 100°C 2.0 5.0 100 200 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A) (IF = 4.0 A) (IF = 8.0 A) Maximum Instantaneous Reverse Current (Note 1) IR (Rated dc Voltage, VR = 5.0 V) (Rated dc Voltage, VR = 10 V) V mA 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Mounted with Minimum Recommended Pad Size, PC Board FR4. 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 VF @ 125°C 10 100°C 1 75°C 25°C −40°C 10 VF @ 125°C 100°C 1 75°C 0.1 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0 VF, INSTANTANEOUS VOLTAGE (V) 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10000 1.00E+00 f = 1 Mhz C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) IR @ 125°C 1.00E−01 100°C 75°C 1.00E−02 1.00E−03 25°C 25°C 1000 1.00E−04 0 2 4 6 8 10 0 2 4 6 8 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 10 MBRS410LT3 PFO, AVERAGE POWER DISSIPATION (W) 9 IF, AVERAGE FORWARD CURRENT (A) 8 7 dc 6 5 4 SQUARE WAVE 3 2 1 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) 0 100 105 110 115 120 125 130 2 1.8 dc 1.6 1.4 1.2 1 0.8 SQUARE WAVE 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating (Junction−to−Lead) Figure 6. Forward Power Dissipation 9 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Thermal Response, Junction−to−Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad) http://onsemi.com 3 MBRS410LT3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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