HMC406MS8G / 406MS8GE v04.0307 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Typical Applications Features This amplifier is ideal for use as a driver amplifier for 5.0 - 6.0 GHz applications: Gain: 17 dB • UNII 38% PAE • HiperLAN & 802.11a WLAN Supply Voltage: +5.0 V Saturated Power: +29 dBm Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G & HMC406MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5.0 and 6.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5.0V supply voltage. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Gain 13 Gain Variation Over Temperature Input Return Loss Min. 16 21 0.03 0.04 21 24 34 38 Saturated Output Power (Psat) 14 Noise Figure Max. Units GHz 17 21 dB 0.03 0.04 dB/ °C 11 dB 9 dB 24 27 dBm 29 dBm 34 38 dBm 27 Output Third Order Intercept (IP3) Typ. 5.7 - 5.9 8 Output Power for 1 dB Compression (P1dB) 5 - 142 Max. 10 Output Return Loss 6.0 6.0 dB 0.002 / 300 0.002 / 300 mA Vpd = 5V 7 7 mA tON, tOFF 35 35 ns Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd) Switching Speed Typ. 5.0 - 6.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v04.0307 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 20 22 15 20 18 16 5 GAIN (dB) RESPONSE (dB) 10 0 -5 14 12 10 +25 C +85 C -40 C 8 -10 6 -15 S21 S11 S22 -20 4 2 -25 3 4 5 6 7 0 4.5 8 5 FREQUENCY (GHz) 5.5 6 6.5 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C RETURN LOSS (dB) -5 RETURN LOSS (dB) 5 Gain vs. Temperature AMPLIFIERS - SMT Broadband Gain & Return Loss -10 -15 +25 C +85 C -40 C -20 -5 -10 -25 -30 4.5 5 5.5 6 -15 4.5 6.5 5 FREQUENCY (GHz) 34 34 32 32 30 30 28 28 26 24 22 6 6.5 26 24 +25 C +85 C -40 C 22 18 16 14 4.5 6.5 20 +25 C +85 C -40 C 18 6 Psat vs. Temperature Psat (dBm) P1dB (dBm) P1dB vs. Temperature 20 5.5 FREQUENCY (GHz) 16 5 5.5 FREQUENCY (GHz) 6 6.5 14 4.5 5 5.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 143 HMC406MS8G / 406MS8GE v04.0307 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 5 Power Compression @ 5.8 GHz Output IP3 vs. Temperature 36 30 OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 42 24 18 12 Pout (dBm) Gain (dB) PAE (%) 6 0 0 2 4 6 8 10 12 14 16 18 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 4.5 +25 C +85 C -40 C 5 Gain & Power vs. Supply Voltage 24 32 9 23 31 8 22 30 7 21 29 20 28 19 27 18 26 17 25 GAIN dB) NOISE FIGURE (dB) 6.5 10 6 5 4 3 +25 C +85 C -40 C 2 16 1 15 0 4.5 14 4.75 5 5.5 6 6.5 22 5 5.25 Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz Reverse Isolation Power Down Isolation -20 -30 -40 -50 33 350 30 315 27 280 24 245 21 210 Icq 18 175 15 140 12 105 Gain P1dB Psat 9 70 35 6 0 3 5 5.5 FREQUENCY (GHz) 6 6.5 2.5 3 3.5 4 4.5 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 0 -60 4.5 23 Vcc SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature -10 24 P1dB Psat Gain FREQUENCY (GHz) ISOLATION (dB) 6 FREQUENCY (GHz) Noise Figure vs. Temperature 5 - 144 5.5 INPUT POWER (dBm) HMC406MS8G / 406MS8GE v04.0307 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 32 mW/°C above 85 °C) 2.1 W Thermal Resistance (junction to ground paddle) 31 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85° C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - SMT 5 Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC406MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC406MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H406 XXXX [2] H406 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 145 HMC406MS8G / 406MS8GE v04.0307 AMPLIFIERS - SMT 5 5 - 146 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Pin Descriptions Pin Number Function Description 1 Vpd Power Control Pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 5.5 to 6.0 GHz. 5, 6 RFOUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the devices as possible. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v04.0307 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 104989 Item Description J1 - J2 PCB Mount SMA RF Connector J3 2mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum C5 0.6 pF Capacitor, 0603 Pkg. C6 1.6 pF Capacitor, 0603 Pkg. C7 100 pF Capacitor, 0603 Pkg. L1 3.9 nH Inductor, 0603 Pkg. U1 HMC406MS8G / HMC406MS8GE Amplifier PCB [2] 105021 Eval Board [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 147 HMC406MS8G / 406MS8GE v04.0307 Application Circuit AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < 0.020” from L1. 5 - 148 TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.038” 0.231” 0.1” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v04.0307 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 5 AMPLIFIERS - SMT Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 149