CREE C3D06060A Silicon carbide schottky diode Datasheet

C3D06060A
VRRM
Silicon Carbide Schottky Diode
IF (TC=135˚C)
Z-Rec Rectifier
®
=
9A
Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-220-2
Benefits
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•
•
•
•
600 V
Qc = 15 nC
Features
•
•
•
•
•
•
•
=
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D06060A
TO-220-2
C3D06060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
19
9
6
A
TC=25˚C
TC=135˚C
TC=154˚C
IFRM
Repetitive Peak Forward Surge Current
30
20
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
IFSM
Non-Repetitive Peak Forward Surge Current
63
49
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
Fig. 8
IF,Max
Non-Repetitive Peak Forward Surge Current
540
460
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
Fig. 8
Ptot
Power Dissipation
88
38
W
TC=25˚C
TC=110˚C
Fig. 4
-55 to
+175
˚C
1
8.8
Nm
lbf-in
IF
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
1
Value
C3D06060A Rev. F, 10-2015
M3 Screw
6-32 Screw
Fig. 3
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.0
1.7
2.4
V
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
Fig. 1
IR
Reverse Current
6.5
13
33
132
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
15
nC
VR = 400 V, IF = 6 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
295
28.5
25.5
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
2.3
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1.7
°C/W
Fig. 9
Typical Performance
20
14
8
6
TJ = 25 °C
TJ = 75 °C
TJ = 125 °C
IR (mA)
10
TJ = -55 °C
Reverse Leakage Current, IRR (mA)
F
Foward I
Current,
(A) IF (A)
12
TJ = 175 °C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 200 400 600 800 1000 1200 FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
C3D06060A Rev. F, 10-2015
3.5
4.0
16
TJ = 175 °C
12
TJ = 125 °C
TJ = 75 °C
8
TJ = 25 °C
TJ = -55 °C
4
0
0
100 200 300 400 500 600 700 800 900 1000
ReverseVVoltage,
(V) VR (V)
R
Figure 2. Reverse Characteristics
Typical Performance
70
100
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
80
70
40
(W)
PP
Tot(W)
TOT
IF(peak)
(A)
IF (A)
50
90
30
60
50
40
30
20
20
10
10
0
25
50
75
100
125
150
0
175
25
50
75
T
˚C
TCC(°C)
150
175
C
Figure 4. Power Derating
350
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
300
20
250
Capacitance
C (pF) (pF)
CapacitiveQCharge,
(nC) QC (nC)
C
125
˚C
TTC (°C)
Figure 3. Current Derating
25
100
15
10
200
150
100
5
50
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
C3D06060A Rev. F, 10-2015
0
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1,000
6
IIFSM (A)
(A)
4
FSM
3
C
Capacitance StoredE Energy,
µJ)
(mJ) EC (µ
5
100
TJ_initial = 25 °C
TJ_initial = 110 °C
2
1
0
0
100
200
300
400
500
600
10
10E-6
700
ReverseVVoltage,
(V) VR (V)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance
(oC/W)
Thermal Resistance
(˚C/W)
1E-3
tp (s)
Time,
tp (s)
R
1
100E-6
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D06060A Rev. F, 10-2015
100E-3
1
10E-3
Package Dimensions
Package TO-220-2
POS
PIN 1
PIN 2
CASE
Inches
Millimeters
Min
Max
Min
Max
A
.381
.410
9.677
10.414
6.477
B
.235
.255
5.969
C
.100
.120
2.540
3.048
D
.223
.337
5.664
8.560
D1
.457-.490
11.60-12.45 typ
D2
.277-.303 typ
7.04-7.70 typ
D3
.244-.252 typ
6.22-6.4 typ
E
.590
.615
14.986
15.621
E1
.302
.326
7.68
8.28
E2
.227
251
5.77
6.37
F
.143
.153
3.632
3.886
G
1.105
1.147
28.067
29.134
H
.500
.550
12.700
13.970
L
.025
.036
.635
.914
M
.045
.055
1.143
1.550
N
.195
.205
4.953
5.207
P
.165
.185
4.191
4.699
Q
.048
.054
1.219
1.372
S
3°
6°
3°
6°
6°
T
3°
6°
3°
U
3°
6°
3°
6°
V
.094
.110
2.388
2.794
W
.014
.025
.356
.635
X
3°
5.5°
3°
5.5°
Y
.385
.410
9.779
10.414
z
.130
.150
3.302
3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D06060A
TO-220-2
C3D06060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D06060A Rev. F, 10-2015
Diode Model
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.96 + (TJ * -1.1*10-3)
RT = 0.07 + (TJ * 7.4*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D06060A Rev. F, 10-2015
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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