DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors Product specification Supersedes data of 1997 Apr 08 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V) DESCRIPTION 1 • Medium power (max. 1.3 W). base 2, 4 collector 3 emitter APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits. 4 handbook, halfpage 2, 4 DESCRIPTION 1 PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCP51 − −45 V BCP52 − −60 V BCP53 − −100 V BCP51 − −45 V BCP52 − −60 V BCP53 − −80 V collector-emitter voltage open base VEBO emitter-base voltage − −5 V IC collector current (DC) − −1 A ICM peak collector current − −1.5 A IBM peak base current Ptot total power dissipation Tstg open collector − −0.2 A − 1.3 W storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. 1999 Apr 08 2 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE note 1 UNIT 95 K/W 14 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS TYP. MAX. UNIT IE = 0; VCB = −30 V − − −100 nA IE = 0; VCB = −30 V; Tj = 125 °C − − −10 µA − − −100 nA IC = −5 mA 40 − − IC = −150 mA 63 − 250 IC = −500 mA 25 − − BCP53-10 63 − 160 BCP51-16; BCP52-16; BCP53-16 100 − 250 collector cut-off current IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain VCE = −2 V; see Fig.2 hFE MIN. DC current gain IC = 150 mA; VCE = −2 V; see Fig.2 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −0.5 V VBE base-emitter voltage IC = −500 mA; VCE = −2 V − − −1 V fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz − 115 − MHz 1999 Apr 08 3 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 MBH730 160 handbook, full pagewidth VCE = −2 V hFE 120 80 40 0 −10−1 −1 −10 −102 Fig.2 DC current gain; typical values. 1999 Apr 08 4 −103 IC (mA) −104 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1999 Apr 08 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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