PD - 91895
IRLL024N
HEXFET® Power MOSFET
l
l
l
l
l
l
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.065Ω
G
ID = 3.1A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
4.4
3.1
2.5
12
2.1
1.0
8.3
± 16
120
3.1
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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6/15/99
IRLL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
–––
–––
1.0
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.048
–––
–––
–––
–––
–––
–––
–––
–––
–––
10.4
1.5
5.5
7.4
21
18
25
510
140
58
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.065
VGS = 10V, ID = 3.1A
0.080
Ω
VGS = 5.0V, ID = 2.5A
0.100
VGS = 4.0V, ID = 1.6A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 1.9 A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 125°C
100
VGS = 16V
nA
-100
VGS = -16V
15.6
ID = 1.9A
2.3
nC
VDS = 44V
8.3
VGS = 5.0V, See Fig. 6 and 9
–––
VDD = 28V
–––
ID = 1.9A
ns
–––
RG = 24 Ω
–––
RD = 15 Ω, See Fig. 10
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 3.1
showing the
A
integral reverse
––– ––– 12
p-n junction diode.
––– ––– 1.0
V
TJ = 25°C, IS = 1.9A, VGS = 0V
––– 39
58
ns
TJ = 25°C, IF = 1.9A
––– 63
94
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25 mH
ISD ≤ 1.9A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 3.1A. (See Figure 12)
2
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IRLL024N
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
2.7V
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 25V
20µs PULSE WIDTH
4
6
8
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
12
ID = 3.1A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLL024N
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
Crss
15
VGS , Gate-to-Source Voltage (V)
1000
12
10
VDS = 44V
VDS = 27V
VDS = 11V
9
6
3
0
1
ID = 1.9A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
4
VDS , Drain-to-Source Voltage (V)
8
12
16
20
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
1
100us
1ms
1
10ms
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1.4
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLL024N
4.0
RD
VDS
I D , Drain Current (A)
VGS
3.0
D.U.T.
RG
+
- VDD
5.0V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
t1
0.01
1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLL024N
1 5V
D R IV E R
L
VD S
D .U .T
RG
+
V
- DD
IA S
10V
tp
A
0.0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
300
TOP
250
BOTTOM
200
150
100
50
0
25
V (B R )D SS
tp
ID
1.4A
2.5A
3.1A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLL024N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14
P A R T NU M B E R
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
F L0 14
31 4
TOP
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W A FER
LO T CO D E
XXXXXX
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E EK
B O TT O M
7
IRLL024N
Tape & Reel Information
SOT-223 Outline
2 .0 5 (.0 8 0 )
1 .9 5 (.0 7 7 )
TR
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 4)
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
7 .5 5 (.2 9 7 )
7 .4 5 (.2 9 4 )
1 6 .3 0 (.6 4 1 )
1 5 .7 0 (.6 1 9 )
7 .6 0 (.2 9 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
2 .3 0 (.0 9 0 )
2 .1 0 (.0 8 3 )
7 .1 0 (.2 79 )
6 .9 0 (.2 72 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S .
1 3 .2 0 (.5 1 9 )
1 2 .8 0 (.5 0 4 )
1 5.40 (.6 0 7 )
1 1.90 (.4 6 9 )
4
330.0 0
(13.000)
M AX.
N O T ES :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R ..
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
5 0.0 0 (1 .9 6 9 )
M IN .
1 4 .4 0 (.5 6 6 )
1 2 .4 0 (.4 8 8 )
3
1 8 .4 0 (.7 2 4 )
M AX .
4
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Data and specifications subject to change without notice. 6/99
8
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