IXYS IXGT50N90B2 Hiperfast igbt b2-class high speed igbt Datasheet

Advance Technical Information
HiPerFASTTM IGBT
B2-Class High Speed IGBTs
VCES
IC25
VCE(sat)
tfi typ
IXGH 50N90B2
IXGT 50N90B2
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
900
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
900
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
50
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
ICM = 100
A
PC
TC = 25°C
400
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247
(IXGH)
C (TAB)
G
Mounting torque (TO-247)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
Weight
6
4
C
E
TO-268
(IXGT)
G
C (TAB)
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z
z
Md
= 900 V
= 75 A
= 2.7 V
= 200 ns
z
g
g
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
z
z
Symbol
Test Conditions
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC110, VGE = 15 V
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0
TJ = 25°C
TJ = 150°C
2.2
TJ = 125°C
5.0
V
50
1
µA
mA
±100
nA
2.7
V
V
z
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
High power density
Very fast switching speeds for high
frequency applications
DS99377(04/05)
IXGH 50N90B2
IXGT 50N90B2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC110 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
25
S
2500
pF
180
pF
75
pF
135
nC
23
nC
50
nC
20
ns
∅P
Cies
Coes
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = IC110 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
Inductive load, TJ = 25°°C
28
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
350
ns
500
ns
200
ns
Eoff
4.7
7.5 mJ
td(on)
20
ns
tfi
tri
Inductive load, TJ = 125°°C
Eon
IC = IC110 A, VGE = 15 V
td(off)
VCE = 720 V, RG = Roff = 5 Ω
28
ns
0.7
mJ
400
ns
tfi
420
ns
Eoff
8.7
mJ
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.31 K/W
RthJC
RthCK
TO-247 AD Outline
(TO-247)
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 50N90B2
IXGT 50N90B2
Fig. 1. Output Characteristics
@ 25 ºC
Fig. 2. Extended Output Characteristics
@ 25 ºC
300
100
90
VGE =15V
80
13V
11V
VGE = 15V
I C - Amperes
I C - Amperes
9V
70
60
50
7V
40
30
11V
200
150
9V
100
7V
20
50
10
5V
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
3
6
Fig. 3. Output Characteristics
@ 125 ºC
12
15
Fig. 4. Dependence of V CE(sat) on
Tem perature
100
1.3
90
VGE = 15V
80
13V
11V
VGE = 15V
I C = 100A
1.2
70
VC E (sat)- Normalized
I C - Amperes
9
V C E - Volts
V C E - Volts
9V
60
50
7V
40
30
20
1.1
1.0
I C = 50A
0.9
0.8
I C = 25A
5V
10
0
0.7
0
0.5
1
1.5
2
2.5
V CE - Volts
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
250
6.5
TJ = 25ºC
6.0
5.5
I C - Amperes
I C = 100A
5.0
VC E - Volts
13V
250
50A
25A
4.5
4.0
3.5
225
TJ = -40ºC
200
25ºC
125ºC
175
150
125
100
3.0
75
2.5
50
2.0
25
0
1.5
5
6
7
8
9
10
11
V G E - Volts
© 2004 IXYS All rights reserved
12
13
14
15
3
4
5
6
7
8
V G E - Volts
9
10
11
12
IXGH 50N90B2
IXGT 50N90B2
Fig. 8. Dependence of Turn-off
Fig. 7. Transconductance
Energy Loss on RG
40
55
50
TJ = 125ºC
35
VGE = 15V
45
E o f f - milliJoules
40
g f s - Siemens
I C = 100A
35
30
TJ = -40ºC
25
25ºC
20
125ºC
15
30
VCE = 720V
25
20
I C = 50A
15
10
10
5
5
I C = 25A
0
0
0
25
50
75
100
125
150
175
200
225
0
I C - Amperes
Energy Loss on IC
90
120
150
20
20
18
R G = 5Ω
16
VGE = 15V
14
VCE = 720V
16
12
10
8
TJ = 25ºC
6
14
12
R G = 5Ω
10
VGE = 15V
6
4
2
2
0
0
30
40
50
60
70
80
I C - Amperes
90
I C = 25A
25
100
1000
900
VGE = 15V
800
VCE = 720V
I C = 25A
Switching Time - nanoseconds
tfi - - - - - TJ = 125ºC
50A
100A
700
I C = 100A
600
55
65
75
85
95
TJ - Degrees Centigrade
105 115 125
600
td(off)
1100
45
Sw itching Tim e on IC
Sw itching Tim e on RG
1200
35
Fig. 12. Dependence of Turn-off
Fig. 11. Dependence of Turn-off
1300
I C = 50A
VCE = 720V
8
4
20
I C = 100A
18
TJ = 125ºC
E o f f - milliJoules
E o f f - MilliJoules
60
R G - Ohms
Fig. 10. Dependence of Turn-off
Energy Loss on Tem perature
Fig. 9. Dependence of Turn-Off
Switching Time - nanoseconds
30
50A
25A
500
400
300
200
td(off)
550
tfi - - - - -
R G = 5Ω, VGE = 15V
500
VCE = 720V
450
TJ = 125ºC
400
350
300
TJ = 25ºC
250
200
150
5
10
15
20
25
30
R G - Ohms
35
40
45
20
50
30
40
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
50
60
70
80
90
100
I C - Amperes
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 50N90B2
IXGT 50N90B2
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
Fig. 14. Gate Charge
15
td(off)
550
13.5
tfi - - - - - -
500
I C = 25A
450
V GE = 15V
400
V CE = 720V
VCE = 450V
I C = 50A
12
50A
100A
RG = 5 Ω
I G = 10mA
10.5
VG E - Volts
Switching Time - nanoseconds
600
350
300
9
7.5
6
4.5
250
I C = 100A
3
50A
25A
1.5
200
150
0
25
35
45
55
65
75
85
95
105 115 125
0
TJ - Degrees Centigrade
20
40
60
80
100
Q G - nanoCoulombs
120
140
Fig. 16. Reverse-Bias Safe
Operating Area
Fig. 15. Capacitance
10000
110
f = 1 MHz
100
C ies
1000
80
I C - Amperes
Capacitance - p F
90
C oes
100
70
60
50
40
TJ = 125ºC
30
C res
R G = 10Ω
20
dV/dT < 10V/ns
10
10
0
5
10
15
20
25
V C E - Volts
30
35
0
40
100
200
300
400
500
600
V C E - Volts
700
800
900
Fig. 17. Maxim um Transient Therm al Resistance
R( t h ) J C - ºC / W
1
0.1
0.01
0.1
© 2004 IXYS All rights reserved
1
10
Pulse Width - milliseconds
100
1000
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