Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ IXGH 50N90B2 IXGT 50N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V ICM = 100 A PC TC = 25°C 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 (IXGH) C (TAB) G Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 Weight 6 4 C E TO-268 (IXGT) G C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features z z Md = 900 V = 75 A = 2.7 V = 200 ns z g g High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z z Symbol Test Conditions VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15 V © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 2.2 TJ = 125°C 5.0 V 50 1 µA mA ±100 nA 2.7 V V z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS99377(04/05) IXGH 50N90B2 IXGT 50N90B2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC110 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 S 2500 pF 180 pF 75 pF 135 nC 23 nC 50 nC 20 ns ∅P Cies Coes 40 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC110 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) Inductive load, TJ = 25°°C 28 IC = IC110 A, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω 350 ns 500 ns 200 ns Eoff 4.7 7.5 mJ td(on) 20 ns tfi tri Inductive load, TJ = 125°°C Eon IC = IC110 A, VGE = 15 V td(off) VCE = 720 V, RG = Roff = 5 Ω 28 ns 0.7 mJ 400 ns tfi 420 ns Eoff 8.7 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.31 K/W RthJC RthCK TO-247 AD Outline (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 50N90B2 IXGT 50N90B2 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 300 100 90 VGE =15V 80 13V 11V VGE = 15V I C - Amperes I C - Amperes 9V 70 60 50 7V 40 30 11V 200 150 9V 100 7V 20 50 10 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 3 6 Fig. 3. Output Characteristics @ 125 ºC 12 15 Fig. 4. Dependence of V CE(sat) on Tem perature 100 1.3 90 VGE = 15V 80 13V 11V VGE = 15V I C = 100A 1.2 70 VC E (sat)- Normalized I C - Amperes 9 V C E - Volts V C E - Volts 9V 60 50 7V 40 30 20 1.1 1.0 I C = 50A 0.9 0.8 I C = 25A 5V 10 0 0.7 0 0.5 1 1.5 2 2.5 V CE - Volts 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 250 6.5 TJ = 25ºC 6.0 5.5 I C - Amperes I C = 100A 5.0 VC E - Volts 13V 250 50A 25A 4.5 4.0 3.5 225 TJ = -40ºC 200 25ºC 125ºC 175 150 125 100 3.0 75 2.5 50 2.0 25 0 1.5 5 6 7 8 9 10 11 V G E - Volts © 2004 IXYS All rights reserved 12 13 14 15 3 4 5 6 7 8 V G E - Volts 9 10 11 12 IXGH 50N90B2 IXGT 50N90B2 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 40 55 50 TJ = 125ºC 35 VGE = 15V 45 E o f f - milliJoules 40 g f s - Siemens I C = 100A 35 30 TJ = -40ºC 25 25ºC 20 125ºC 15 30 VCE = 720V 25 20 I C = 50A 15 10 10 5 5 I C = 25A 0 0 0 25 50 75 100 125 150 175 200 225 0 I C - Amperes Energy Loss on IC 90 120 150 20 20 18 R G = 5Ω 16 VGE = 15V 14 VCE = 720V 16 12 10 8 TJ = 25ºC 6 14 12 R G = 5Ω 10 VGE = 15V 6 4 2 2 0 0 30 40 50 60 70 80 I C - Amperes 90 I C = 25A 25 100 1000 900 VGE = 15V 800 VCE = 720V I C = 25A Switching Time - nanoseconds tfi - - - - - TJ = 125ºC 50A 100A 700 I C = 100A 600 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 600 td(off) 1100 45 Sw itching Tim e on IC Sw itching Tim e on RG 1200 35 Fig. 12. Dependence of Turn-off Fig. 11. Dependence of Turn-off 1300 I C = 50A VCE = 720V 8 4 20 I C = 100A 18 TJ = 125ºC E o f f - milliJoules E o f f - MilliJoules 60 R G - Ohms Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Fig. 9. Dependence of Turn-Off Switching Time - nanoseconds 30 50A 25A 500 400 300 200 td(off) 550 tfi - - - - - R G = 5Ω, VGE = 15V 500 VCE = 720V 450 TJ = 125ºC 400 350 300 TJ = 25ºC 250 200 150 5 10 15 20 25 30 R G - Ohms 35 40 45 20 50 30 40 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 50 60 70 80 90 100 I C - Amperes 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 50N90B2 IXGT 50N90B2 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) 550 13.5 tfi - - - - - - 500 I C = 25A 450 V GE = 15V 400 V CE = 720V VCE = 450V I C = 50A 12 50A 100A RG = 5 Ω I G = 10mA 10.5 VG E - Volts Switching Time - nanoseconds 600 350 300 9 7.5 6 4.5 250 I C = 100A 3 50A 25A 1.5 200 150 0 25 35 45 55 65 75 85 95 105 115 125 0 TJ - Degrees Centigrade 20 40 60 80 100 Q G - nanoCoulombs 120 140 Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 110 f = 1 MHz 100 C ies 1000 80 I C - Amperes Capacitance - p F 90 C oes 100 70 60 50 40 TJ = 125ºC 30 C res R G = 10Ω 20 dV/dT < 10V/ns 10 10 0 5 10 15 20 25 V C E - Volts 30 35 0 40 100 200 300 400 500 600 V C E - Volts 700 800 900 Fig. 17. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1 0.1 0.01 0.1 © 2004 IXYS All rights reserved 1 10 Pulse Width - milliseconds 100 1000