NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT449 ISSUE 1 SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 TYP. MAX. V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=40V VCB=40V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-on Voltage VBE(on) 1 V IC=1A,VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 Transition Frequency fT 150 Output Capacitance Cobo IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-30