Zetex FXT449 Npn silicon planar Datasheet

NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FXT449
ISSUE 1 – SEPT 93
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
B
C
E
E-Line
TO92 Compatible
REFER TO ZTX449 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
50
TYP.
MAX.
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA, IC=0
Collector Cut-Off Current ICBO
0.1
10
µA
µA
VCB=40V
VCB=40V, Tamb=100°C
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
1
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1
V
IC=1A,VCE=2V*
Static Forward Current
Transfer Ratio
hFE
70
100
80
40
Transition
Frequency
fT
150
Output Capacitance
Cobo
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
300
15
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-30
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