LM833 Dual Audio Operational Amplifier General Description Features The LM833 is a dual general purpose operational amplifier designed with particular emphasis on performance in audio systems. This dual amplifier IC utilizes new circuit and processing techniques to deliver low noise, high speed and wide bandwidth without increasing external components or decreasing stability. The LM833 is internally compensated for all closed loop gains and is therefore optimized for all preamp and high level stages in PCM and HiFi systems. The LM833 is pin-for-pin compatible with industry standard dual operational amplifiers. > 140dB j Wide dynamic range: j Low input noise 4.5nV/√Hz voltage: j High slew rate: j High gain bandwidth: 7 V/µs (typ); 5V/µs (min) 15MHz (typ); 10MHz (min) j Wide power bandwidth: 120KHz j Low distortion: 0.002% j Low offset voltage: 0.3mV j Large phase margin: 60˚ j Available in 8 pin MSOP package Schematic Diagram (1/2 LM833) 00521801 © 2004 National Semiconductor Corporation DS005218 www.national.com LM833 Dual Audio Operational Amplifier January 2003 LM833 Connection Diagram 00521802 Order Number LM833M, LM833MX, LM833N, LM833MM or LM833MMX See NS Package Number M08A, N08E or MUA08A www.national.com 2 Storage Temperature Range TSTG If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Soldering Information Dual-In-Line Package Soldering (10 seconds) Supply Voltage VCC–VEE 36V Power Dissipation (Note 4) PD Operating Temperature Range TOPR 500 mW −40 ∼ 85˚C DC Electrical Characteristics 260˚C Small Outline Package (SOIC and MSOP) ± 30V ± 15V Differential Input Voltage (Note 3) VI Input Voltage Range (Note 3) VIC −60 ∼ 150˚C Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C ESD tolerance (Note 5) 1600V (Notes 1, 2) (TA = 25˚C, VS = ± 15V) Symbol Parameter Conditions Min Typ Max Units mV VOS Input Offset Voltage 0.3 5 IOS Input Offset Current 10 200 nA IB Input Bias Current 500 1000 nA AV Voltage Gain RL = 2 kΩ, VO = ± 10V VOM Output Voltage Swing RL = 10 kΩ RS = 10Ω RL = 2 kΩ VCM Input Common-Mode Range 90 110 dB ± 12 ± 10 ± 12 ± 13.5 ± 13.4 ± 14.0 V V V CMRR Common-Mode Rejection Ratio VIN = ± 12V 80 100 dB PSRR Power Supply Rejection Ratio VS = 15∼5V, −15∼−5V 80 100 dB IQ Supply Current VO = 0V, Both Amps 5 8 mA AC Electrical Characteristics (TA = 25˚C, VS = ± 15V, RL = 2 kΩ) Symbol Parameter Conditions Min Typ Max Units SR Slew Rate RL = 2 kΩ 5 7 V/µs GBW Gain Bandwidth Product f = 100 kHz 10 15 MHz Design Electrical Characteristics (TA = 25˚C, VS = ± 15V) The following parameters are not tested or guaranteed. Symbol Parameter ∆VOS/∆T Average Temperature Coefficient THD Distortion Conditions Typ Units 2 µV/˚C 0.002 % of Input Offset Voltage RL = 2 kΩ, f = 20∼20 kHz VOUT = 3 Vrms, AV = 1 en Input Referred Noise Voltage RS = 100Ω, f = 1 kHz 4.5 in Input Referred Noise Current f = 1 kHz 0.7 120 kHz 9 MHz 60 deg −120 dB PBW Power Bandwidth VO = 27 Vpp, RL = 2 kΩ, THD ≤ 1% fU Unity Gain Frequency Open Loop φM Phase Margin Open Loop Input Referred Cross Talk f = 20∼20 kHz 3 www.national.com LM833 Absolute Maximum Ratings (Note 1) LM833 Design Electrical Characteristics (Continued) Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified. Note 3: If supply voltage is less than ± 15V, it is equal to supply voltage. Note 4: This is the permissible value at TA ≤ 85˚C. Note 5: Human body model, 1.5 kΩ in series with 100 pF. Typical Performance Characteristics Maximum Power Dissipation vs Ambient Temperature Input Bias Current vs Ambient Temperature 00521804 00521805 Input Bias Current vs Supply Voltage Supply Current vs Supply Voltage 00521806 www.national.com 00521807 4 LM833 Typical Performance Characteristics (Continued) DC Voltage Gain vs Ambient Temperature DC Voltage Gain vs Supply Voltage 00521808 00521809 Voltage Gain & Phase vs Frequency Gain Bandwidth Product vs Ambient Temperature 00521810 00521811 Gain Bandwidth vs Supply Voltage Slew Rate vs Ambient Temperature 00521812 00521813 5 www.national.com LM833 Typical Performance Characteristics (Continued) Slew Rate vs Supply Voltage Power Bandwidth 00521815 00521814 CMR vs Frequency Distortion vs Frequency 00521819 00521820 Maximum Output Voltage vs Supply Voltage PSRR vs Frequency 00521816 00521818 www.national.com 6 LM833 Typical Performance Characteristics (Continued) Maximum Output Voltage vs Ambient Temperature Spot Noise Voltage vs Frequency 00521817 00521821 Spot Noise Current vs Frequency Input Referred Noise Voltage vs Source Resistance 00521823 00521822 Noninverting Amp Noninverting Amp 00521824 00521825 7 www.national.com LM833 Typical Performance Characteristics (Continued) Inverting Amp 00521826 a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is accidentally shorted. Application Hints The LM833 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 50 pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable. Capacitive loads greater than 50 pF must be isolated from the output. The most straightforward way to do this is to put Noise Measurement Circuit 00521827 Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise. Total Gain: 115 dB @f = 1 kHz Input Referred Noise Voltage: en = V0/560,000 (V) www.national.com 8 LM833 RIAA Preamp Voltage Gain, RIAA Deviation vs Frequency Flat Amp Voltage Gain vs Frequency 00521828 00521829 Typical Applications NAB Preamp Voltage Gain vs Frequency NAB Preamp 00521831 00521830 AV = 34.5 F = 1 kHz En = 0.38 µV A Weighted Balanced to Single Ended Converter Adder/Subtracter 00521833 VO = V1 + V2 − V3 − V4 00521832 VO = V1–V2 9 www.national.com LM833 Typical Applications (Continued) Sine Wave Oscillator 00521834 Second Order High Pass Filter (Butterworth) Second Order Low Pass Filter (Butterworth) 00521835 00521836 Illustration is f0 = 1 kHz Illustration is f0 = 1 kHz www.national.com 10 LM833 Typical Applications (Continued) State Variable Filter 00521837 Illustration is f0 = 1 kHz, Q = 10, ABP = 1 AC/DC Converter 00521838 2 Channel Panning Circuit (Pan Pot) Line Driver 00521839 00521840 11 www.national.com LM833 Typical Applications (Continued) Tone Control 00521841 Illustration is: fL = 32 Hz, fLB = 320 Hz fH =11 kHz, fHB = 1.1 kHz 00521842 RIAA Preamp 00521803 Av = 35 dB En = 0.33 µV S/N = 90 dB f = 1 kHz A Weighted A Weighted, VIN = 10 mV @ f = 1 kHz www.national.com 12 LM833 Typical Applications (Continued) Balanced Input Mic Amp 00521843 Illustration is: V0 = 101(V2 − V1) 13 www.national.com LM833 Typical Applications (Continued) 10 Band Graphic Equalizer 00521844 fo(Hz) C1 C2 R1 R2 32 0.12µF 4.7µF 75kΩ 500Ω 64 0.056µF 3.3µF 68kΩ 510Ω 125 0.033µF 1.5µF 62kΩ 510Ω 250 0.015µF 0.82µF 68kΩ 470Ω 500 8200pF 0.39µF 62kΩ 470Ω 1k 3900pF 0.22µF 68kΩ 470Ω 2k 2000pF 0.1µF 68kΩ 470Ω 4k 1100pF 0.056µF 62kΩ 470Ω 8k 510pF 0.022µF 68kΩ 510Ω 16k 330pF 0.012µF 51kΩ 510Ω Note 6: At volume of change = ± 12 dB Q = 1.7 Reference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61 www.national.com 14 LM833 Typical Applications (Continued) LM833 MDC MWC DUAL AUDIO OPERATIONAL AMPLIFIER 00521854 Die Layout (A - Step) DIE/WAFER CHARACTERISTICS Fabrication Attributes General Die Information Physical Die Identification LM833A Bond Pad Opening Size (min) 110µm x 110µm Die Step A Bond Pad Metalization ALUMINUM Passivation VOM NITRIDE Physical Attributes Wafer Diameter 150mm Back Side Metal BARE BACK Dise Size (Drawn) 1219µm x 1270µm 48mils x 50mils Back Side Connection Floating Thickness 406µm Nominal Min Pitch 288µm Nominal Special Assembly Requirements: Note: Actual die size is rounded to the nearest micron. Die Bond Pad Coordinate Locations (A - Step) (Referenced to die center, coordinates in µm) NC = No Connection SIGNAL NAME PAD# NUMBER X/Y COORDINATES X PAD SIZE Y X Y OUTPUT A 1 -476 500 110 x 110 INPUT A- 2 -476 -212 110 x 110 INPUT A+ 3 -476 -500 110 x 110 VEE- 4 -0 -500 110 x 110 INPUT B+ 5 476 -500 110 x 110 INPUT B- 6 476 -212 110 x 110 OUTPUT B 7 476 500 110 x 110 VCC+ 8 0 500 110 x 110 15 www.national.com LM833 Typical Applications (Continued) IN U.S.A Tel #: 1 877 Dial Die 1 877 342 5343 Fax: 1 207 541 6140 IN EUROPE Tel: 49 (0) 8141 351492 / 1495 Fax: 49 (0) 8141 351470 IN ASIA PACIFIC Tel: (852) 27371701 IN JAPAN Tel: www.national.com 81 043 299 2308 16 LM833 Physical Dimensions inches (millimeters) unless otherwise noted Molded Small Outline Package (M) Order Number LM833M or LM833MX NS Package Number M08A Molded Dual-In-Line Package (N) Order Number LM833N NS Package Number N08E 17 www.national.com LM833 Dual Audio Operational Amplifier Physical Dimensions inches (millimeters) unless otherwise noted (Continued) 8-Lead (0.118” Wide) Molded Mini Small Outline Package Order Number LM833MM or LM833MMX NS Package Number MUA08A National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. 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