Infineon AIGW50N65H5 High speed fast igbt in trenchstoptm 5 technology Datasheet

AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
HighspeedfastIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
HighspeedH5technologyoffering:
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•Dynamicallystresstested
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Off-boardcharger
•On-boardcharger
•DC/DCconverter
•Power-Factorcorrection
1
Packagepindefinition:
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
AIGW50N65H5
Datasheet
www.infineon.com
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
50A
1.66V
175°C
AG50EH5
PG-TO247-3
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
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2017-06-30
AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
80.0
53.5
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
150.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
150.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
270.0
136.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
2)
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
RthCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-C)
-
-
0.55
K/W
Thermal resistance
junction - ambient
Rth(j-a)
-
-
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.66
1.91
2.04
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.50mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
500
40
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=50.0A
-
62.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
1)
2)
V
V
Defined by design. Not subject to production test.
Package not recommended for surface mount applications
Datasheet
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
2800
-
-
54
-
-
11
-
-
116.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=50.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
21
-
ns
-
12
-
ns
-
173
-
ns
-
11
-
ns
-
0.45
-
mJ
-
0.16
-
mJ
-
0.61
-
mJ
-
20
-
ns
-
4
-
ns
-
187
-
ns
-
24
-
ns
-
0.10
-
mJ
-
0.04
-
mJ
-
0.14
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Datasheet
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
20
-
ns
-
13
-
ns
-
200
-
ns
-
13
-
ns
-
0.61
-
mJ
-
0.24
-
mJ
-
0.85
-
mJ
-
18
-
ns
-
4
-
ns
-
225
-
ns
-
31
-
ns
-
0.16
-
mJ
-
0.07
-
mJ
-
0.23
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Datasheet
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
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AIGW50N65H5
270
90
240
80
210
70
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
Highspeedswitchingseriesfifthgeneration
180
150
120
90
60
50
40
30
60
20
30
10
0
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
150
135
135
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
120
VGE = 20V
18V
15V
90
12V
75
10V
8V
60
7V
45
6V
150
175
18V
15V
90
12V
75
10V
8V
60
7V
45
6V
5V
30
15
0
125
VGE = 20V
105
5V
30
100
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
150
105
75
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
120
50
15
0
1
2
3
4
0
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
Datasheet
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=150°C)
6
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
150
2.50
Tvj=25°C
Tvj=150°C
VCEsat,COLLECTOR-EMITTERSATURATION[V]
135
IC,COLLECTORCURRENT[A]
120
105
90
75
60
45
30
15
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
8.5
IC=6.25A
IC=12.5A
IC=25A
IC=50A
25
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
100
125
150
175
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
75
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
1000
100
10
1
50
Tvj,JUNCTIONTEMPERATURE[°C]
0
30
60
90
120
100
10
1
150
IC,COLLECTORCURRENT[A]
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
Datasheet
5
15
25
35
45
55
65
RG,GATERESISTANCE[Ω]
Figure 8. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
7
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
1000
5.5
100
10
1
25
50
75
100
125
150
typ.
min.
max.
5.0
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
175
25
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest
circuit in Figure E)
100
125
150
2.4
Eoff
Eon
Ets
9
Eoff
Eon
Ets
2.1
8
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
75
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
10
7
6
5
4
3
2
1.8
1.5
1.2
0.9
0.6
0.3
1
0
50
Tvj,JUNCTIONTEMPERATURE[°C]
0
30
60
90
120
0.0
150
IC,COLLECTORCURRENT[A]
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,
dynamic test circuit in Figure E)
Datasheet
5
15
25
35
45
55
65
75
85
RG,GATERESISTANCE[Ω]
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
1.0
1.1
Eoff
Eon
Ets
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
1.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.9
0.1
25
50
75
100
125
150
0.0
200
175
Tvj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
16
VCC=130V
VCC=520V
Cies
Coes
Cres
1E+4
12
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
14
10
8
6
1000
100
4
10
2
0
0
20
40
60
80
100
1
120
QG,GATECHARGE[nC]
Figure 15. Typicalgatecharge
(IC=50A)
Datasheet
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.115657 0.129838 0.156524 0.147981
τi[s]:
1.8E-4
1.7E-3
0.0144
0.127484
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
Datasheet
10
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
Package Drawing PG-TO247-3
Datasheet
11
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
Datasheet
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AIGW50N65H5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
AIGW50N65H5
Revision:2017-06-30,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2017-06-30
Data sheet created
Datasheet
13
V2.1
2017-06-30
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