LRC L2SA2030M3T5G Low frequency transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Low frequency transistor
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
PNP
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ 250mA
At IC = −200mA / IB = −10mA
L2SA2030M3T5G
3
3) We declare that the material of product compliance with RoHS requirements.
1
2
SOT –723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−15
−12
−6
−500
−1
Unit
V
V
V
mA
A
150
mW
150
−55 to +150
°C
°C
3
COLLECTOR
1
BASE
∗
2
EMITTER
∗Single pulse, Pw=1ms
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
−
Collector-base breakdown voltage
BVCBO −15
Collector-emitter breakdown voltage BVCEO −12
−
−
−6
Emitter-base breakdown voltage
BVEBO
−
−
Collector cutoff current
ICBO
IEBO
Emitter cutoff current
−
−
DC current transfer ratio
hFE
270
−
−
−100
Collector-emitter saturation voltage VCE (sat)
fT
Transition frequency
−
260
Output capacitance
Cob
−
6.5
Max. Unit
Conditions
−
V IC= −10µA
−
V IC= −1mA
V IE= −10µA
−
−100 nA VCB= −15V
−100 nA VEB= −6V
VCE= −2V / IC= −10mA
680
−
−250 mV IC= −200mA / IB= −10mA
−
MHz VCE= −2V, IE=10mA, fT=100MHz
−
pF VCB= −10V, IE=0A, f=1MHz
z Device marking and ordering information
Device
L2SA2030M3T5G
Marking
Shipping
BW
4000/Tape&Reel
1/3
LESHAN RADIO COMPANY, LTD.
L2SA2030M3T5G
Electrical characteristic curves
1000
VCE=2V
Ta=125°C
Ta=25°C
Ta= −40°C
100
50
20
10
5
2
0.5
1.0
50
20
10
5
1
1.5
200
100
2
5
10 20
50 100 200
20
10
5
Fig.2 DC Current Gain vs.
Collector Current
200
100
50
IC / IB=50
IC / IB=20
20
IC / IB=10
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
1000
10000
IC / IB=20
5000
Ta= −40°C
Ta=25°C
Ta=125°C
2000
1000
500
200
100
50
20
10
1
2
5
10 20
1
500 1000
Fig.1 Grounded Emitter Propagation
Characteristics
Ta=25°C
Ta=125°C
Ta=25°C
Ta= −40°C
50
2
1
COLLECTOR CURRENT : IC (mA)
500
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (mV)
Ta=125°C
Ta=25°C
Ta= −40°C
100
BASE TO EMITTER VOLTAGE : VBE (V)
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
200
2
0
IC / IB=20
500
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
1000
TRANSITION FREQUENCY : fT (MHz)
1
1000
COLLECTOR SATURATION
VOLTAGE : V CE (sat) (V)
200
VCE=2V
500
DC CURRENT GAIN : hFE
500
BASER SATURATION VOLTAGE : VBE (sat) (mV)
COLLECTOR CURRENT : IC (mA)
1000
VCE=2V
Ta=25°C
500
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
EMITTER CURRENT : IC (mA)
Fig.6 Gain Bandwidth Product vs.
Emitter Current
IE=0A
f=1MHz
Ta=25°C
500
200
100
50
Cib
20
10
Cob
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
2/3
LESHAN RADIO COMPANY, LTD.
L2SA2030M3T5G
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
b 2X
0.08 (0.0032) X Y
e
HE
L
2
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
XX M
1
SOLDERING FOOTPRINT FOR SOT−723
XX
M
0.40
0.0157
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm inches
3/3
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