LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA L2SA2030M3T5G 3 3) We declare that the material of product compliance with RoHS requirements. 1 2 SOT –723 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −500 −1 Unit V V V mA A 150 mW 150 −55 to +150 °C °C 3 COLLECTOR 1 BASE ∗ 2 EMITTER ∗Single pulse, Pw=1ms zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. − Collector-base breakdown voltage BVCBO −15 Collector-emitter breakdown voltage BVCEO −12 − − −6 Emitter-base breakdown voltage BVEBO − − Collector cutoff current ICBO IEBO Emitter cutoff current − − DC current transfer ratio hFE 270 − − −100 Collector-emitter saturation voltage VCE (sat) fT Transition frequency − 260 Output capacitance Cob − 6.5 Max. Unit Conditions − V IC= −10µA − V IC= −1mA V IE= −10µA − −100 nA VCB= −15V −100 nA VEB= −6V VCE= −2V / IC= −10mA 680 − −250 mV IC= −200mA / IB= −10mA − MHz VCE= −2V, IE=10mA, fT=100MHz − pF VCB= −10V, IE=0A, f=1MHz z Device marking and ordering information Device L2SA2030M3T5G Marking Shipping BW 4000/Tape&Reel 1/3 LESHAN RADIO COMPANY, LTD. L2SA2030M3T5G Electrical characteristic curves 1000 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 2 0.5 1.0 50 20 10 5 1 1.5 200 100 2 5 10 20 50 100 200 20 10 5 Fig.2 DC Current Gain vs. Collector Current 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 1000 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 1 500 1000 Fig.1 Grounded Emitter Propagation Characteristics Ta=25°C Ta=125°C Ta=25°C Ta= −40°C 50 2 1 COLLECTOR CURRENT : IC (mA) 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) Ta=125°C Ta=25°C Ta= −40°C 100 BASE TO EMITTER VOLTAGE : VBE (V) 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 2 0 IC / IB=20 500 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 1000 TRANSITION FREQUENCY : fT (MHz) 1 1000 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) 200 VCE=2V 500 DC CURRENT GAIN : hFE 500 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current IE=0A f=1MHz Ta=25°C 500 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 2/3 LESHAN RADIO COMPANY, LTD. L2SA2030M3T5G SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 b 2X 0.08 (0.0032) X Y e HE L 2 DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE XX M 1 SOLDERING FOOTPRINT FOR SOT−723 XX M 0.40 0.0157 = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches 3/3