Diode Semiconductor Korea ER100L--- ER106L VOLTAGE RANGE: 50 --- 600 V CURRENT: 1.0 A ULTRA FAST RECTIFIERS FEATURES Low cost Diffusde junction Ultra fast switching for high efficiency A - 405 Low reverse leakage current Low forward voltage drop High current capability The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC A--405,molded plastic Polarity: Color band denotes cathode Weight: 0.008 ounces,0.23 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER 100L ER 101L ER 101AL ER 102L ER 103L ER 104L ER 106L UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 30.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 Maximum instantaneous forward voltage @ 1.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 VF IR 0.95 1.25 5.0 150.0 1.7 V A Maximum reverse recovery time (Note1) t rr 35 ns Typical junction capacitance (Note2) CJ 17 pF Typical thermal resistance (Note3) RθJA 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range ／Ｗ NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal resistance junction to ambient www.diode.kr Diode Semiconductor Korea ER100L--- ER106L FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10 N 1. 50 N 1. trr +0.5A D.U.T. (-) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0 .2 5 A (-) -1 .0 A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 5 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORW ARD DERATING CURVE 10 1.0 ER103S-ER104S 0.1 ER106S 0.01 TJ = 25 1.0 AMPERES AVERAGE FORWARD CURRENT ER100S-ER102S AMPERES INSTANTANEOUS FORWARD CURRENT z 0.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(95mm)Lead Length 0 0 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1 00 1 25 1 50 175 TJ = 25 f = 1.0MHz Vsig = 50mVp-p 10 10 REVERSE VOLTAGE,VOLTS 100 30 8.3ms Single Half Sine-Wave 25 20 AMPERES 100 FIG.5 -- PEAK FORW ARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 75 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 1 50 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 1 0.1 25 15 10 5 0 0 1 5 20 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr