CHENMKO ENTERPRISE CO.,LTD CHDTC614TUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors (2) ideal for muting circuits. * These transistors can be used at high current levels,IC=600mA * Internal isolated NPN transistors in one package. * Built in single resistor(R1=10kΩ, Typ. ) (3) CONSTRUCTION (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING 0.8~1.1 0.05~0.2 Emitter CIRCUIT 0~0.1 0.1Min. Base 2 2.0~2.45 1 TR R1 3 Collector SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 20 V VCEO Collector-Emitter voltage 20 V VEBO Emitter-Base voltage 12 V IC(Max.) Coll ector current 600 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 TJ Junction temperature −55 ∼ +150 Tamb ≤ 25 OC, Note 1 O O C C Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-09 RATING CHARACTERISTIC ( CHDTC614TUPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 20 − − V 20 − − V IE=50uA 12 − − V Collector cutoff current VCB=20V − − 0.5 uA Emitter cutoff current VEB=12V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=50mA/2.5mA − 40 150 mV hFE DC current gain IC=50mA; VCE=5.0V 820 − 2700 R1 fT Input resistor Transition frequency 7 10 13 KΩ IE=-50mA, VCE=10.0V f=100MHz − 150 − MHz RON Output "ON" resistance VI=5V,RL=1KΩ ,f=1KHZ − 0.9 − Ω BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA RATING CHARACTERISTIC CURVES ( CHDTC614TUPT ) Typical Electrical Characteristics Ta=100°C Ta=25°C Ta= −40°C 1000 100 0.1 1 10 100 1000 ON RESISTANCE : Ron (Ω) Ta=25°C f=1kHz RL=1kΩ hFE=250 (5V / 50mA) 100 10 1 1 10 1000 100 Ta=100°C Ta=25°C Ta= −40°C 10 1 0.1 1 10 100 1000 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current Fig.1 DC Current Gain vs. Collector Current 1000 IC / IB=20 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 0.1 0.1 10000 VCE=5V COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) DC CURRENT GAIN : hFE 10000 100 INPUT VOLTAGE : VI (V) Fig.3 "ON" resistance vs. Input Voltage