IRFH8334PbF VDS VGS max RDS(on) max 30 V ± 20 V 9.0 (@VGS = 10V) (@VGS = 4.5V) 13.5 Qg typ. 7.1 ID 25 (@Tc(Bottom) = 25°C) HEXFET® Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 4.1°C/W) Low Profile (<1.2mm) Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification O rderable part number Package Type IRFH8334TRPBF IRFH8334TR2PBF PQ FN 5mm x 6mm PQ FN 5mm x 6mm Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Q uantity Tape and Reel 4000 Tape and Reel 400 Note EO L notice #259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 12 44 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 28 IDM PD @TA = 25°C Power Dissipation hi hi 25i c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 100 3.2 g V 14 Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current ID @ TC = 25°C Units 30 0.026 -55 to + 150 W W/°C °C Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 IRFH8334PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.021 7.2 ––– 9.0 VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 1.35 ––– 11.2 1.8 -6.6 13.5 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 44 ––– ––– ––– 15 7.1 ––– ––– ––– Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.5 1.0 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 2.3 1.3 3.3 ––– ––– ––– Output Charge ––– 5.7 ––– nC Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.2 8.3 14 ––– ––– ––– Ω Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 7.0 4.6 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– BVDSS ∆ΒVDSS/∆TJ RDS(on) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 1180 260 110 Max. Units ––– ––– Conditions VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 16A V VDS = VGS, ID = 25µA mV/°C e e VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C µA nA VGS = 20V VGS = -20V S nC VDS = 10V, ID = 20A VGS = 10V, VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V nC ID = 20A VDS = 16V, VGS = 0V VDD = 30V, VGS = 4.5V ID = 20A ns RG=1.8Ω VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Max. 35 20 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– Max. Units 25 ––– ––– 100 ––– ––– ––– 13 1.0 20 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 380 A/µs ––– 19 29 nC Time is dominated by parasitic Inductance G S e e Thermal Resistance RθJC (Top) f Junction-to-Case f RθJA Junction-to-Ambient RθJC (Bottom) RθJA (<10s) 2 Parameter Junction-to-Case g Junction-to-Ambient g www.irf.com © 2014 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. Units 4.1 37 °C/W 39 26 January 13, 2014 IRFH8334PbF 1000 1000 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 1 0.1 2.5V BOTTOM 10 2.5V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.01 0.1 1 10 100 0.1 1000 Fig 1. Typical Output Characteristics 100 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 100 T J = 150°C 10 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 1.0 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback January 13, 2014 IRFH8334PbF 1000 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 150°C T J = 25°C 10 100 100µsec 1msec 10 Limited by Source Bonding Technology i 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.8 45 i VGS(th) , Gate threshold Voltage (V) Limited By Source Bonding Technology 40 35 ID, Drain Current (A) 10msec 30 25 20 15 10 5 2.6 2.4 2.2 2.0 1.8 ID = 25µA 1.6 ID = 250µA ID = 1.0mA 1.4 ID = 1.0A 1.2 1.0 0.8 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 30 160 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH8334PbF ID = 20A 25 20 15 T J = 125°C 10 T J = 25°C 5 ID 3.7A 8.2A BOTTOM 20A 140 TOP 120 100 80 60 40 20 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback January 13, 2014 IRFH8334PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback January 13, 2014 IRFH8334PbF PQFN 5x6 Outline "E" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "E" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 IRFH8334PbF PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) TR1 TR2 OPTION (QTY 400) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MIN MIN MAX MAX MAX A 6.988 12.972 7.028 329.5 330.5 178.5 13.011 177.5 B 0.823 0.823 0.846 20.9 20.9 0.846 21.5 21.5 C 0.520 0.504 0.543 12.8 13.8 13.5 13.2 0.532 D 0.075 0.067 0.091 0.091 1.7 2.3 2.3 1.9 E 2.350 3.819 2.598 97 66 99 65 3.898 F Ref 12 17.4 Ref 0.512 G 0.512 0.571 13 13 0.571 14.5 14.5 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 IRFH8334PbF Qualification information† Cons umer†† Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant ††† guidelines ) MS L1 (per JE DE C J-S T D-020D††† ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 50Ω, IAS = 20A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. Revision History Date 1/13/2014 Comment Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259). • Updated data sheet with the new IR corporate template. • IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014